SD101CWS-G3-08 - Vishay Semiconductors

SD101AWS, SD101BWS, SD101CWS

www.vishay.com Vishay Semiconductors

Rev. 2.1, 14-Oct-16 1Document Number: 85680

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Small Signal Schottky Diodes

DESIGN SUPPORT TOOLS click logo to get started

MECHANICAL DATA

Case: SOD-323

Weight: approx. 4.3 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

FEATURES

• For general purpose applications

• The SD101 series is a metal-on-silicon Schottky

barrier device which is protected by a PN

junction guardring

• The low forward voltage drop and fast switching

make it ideal for protection of MOS devices,

steering, biasing and coupling diodes for fast

switching and low logic level applications

• AEC-Q101 qualified available

• Base P/N-E3 - RoHS-compliant, commercial grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

(1) Valid provided that electrodes are kept at ambient temperature

Note

(1) Valid provided that electrodes are kept at ambient temperature

Available

Models

PARTS TABLE

PART ORDERING CODE CIRCUIT

CONFIGURATION TYPE MARKING REMARKS

SD101AWS SD101AWS-E3-08 or SD101AWS-E3-18 Single SA

Tape and reel

SD101AWS-HE3-08 or SD101AWS-HE3-18

SD101BWS SD101BWS-E3-08 or SD101BWS-E3-18 Single SB

SD101BWS-HE3-08 or SD101BWS-HE3-18

SD101CWS SD101CWS-E3-08 or SD101CWS-E3-18 Single SC

SD101CWS-HE3-08 or SD101CWS-HE3-18

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT

Repetitive peak reverse voltage

SD101AWS VRRM 60 V

SD101BWS VRRM 50 V

SD101CWS VRRM 40 V

Power dissipation (infinite heatsink) (1) Ptot 150 mW

Forward continuous current IF30 mA

Maximum single cycle surge 10 μs square wave IFSM 2A

THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Thermal resistance junction to ambient air (1) RthJA 650 K/W

Junction temperature (1) Tj125 °C

Operating temperature range Top -55 to +125 °C

Storage temperature range Tstg -65 to +150 °C

SD101AWS, SD101BWS, SD101CWS

www.vishay.com Vishay Semiconductors

Rev. 2.1, 14-Oct-16 2Document Number: 85680

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage

Fig. 2 - Typical Forward Conduction Curve

Fig. 3 - Typical Variation of Reverse Current at Various

Temperatures

Fig. 4 - Typical Capacitance Curve as a Function of Reverse Voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

Reverse breakdown voltage IR = 10 μA

SD101AWS V(BR) 60 V

SD101BWS V(BR) 50 V

SD101CWS V(BR) 40 V

Leakage current

VR = 50 V SD101AWS IR200 nA

VR = 40 V SD101BWS IR200 nA

VR = 30 V SD101CWS IR200 nA

Forward voltage drop

IF = 1 mA

SD101AWS VF410 mV

SD101BWS VF400 mV

SD101CWS VF390 mV

IF = 15 mA

SD101AWS VF1000 mV

SD101BWS VF950 mV

SD101CWS VF900 mV

Junction capacitance VR = 0 V, f = 1 MHz

SD101AWS CD2.0 ns

SD101BWS CD2.1 ns

SD101CWS CD2.2 ns

Reverse recovery time IF = IR = 5 mA,

recover to 0.1 IRtrr 1ns

0.01

0.1

0 0.4 0.6 0.8 1.00.2

I - Forward Current (mA)

VF- Forward Voltage (V)

18477

0 0.4 0.6 0.8 1.00.2

100

I - Forward Current (mA)

VF- Forward Voltage (V)

18478

100

0.1

0.01 10 20 30 40050

75 °C

50 °C

25 °C

125 °C

100 °C

VR- Reverse Voltage (V)

I - Reverse Current (µA)

18479

18480

10 20 30 400

1.0

1.2

1.4

1.6

1.8

2.0

0.6

0.8

0.2

0.4

Tj= 25 °C

CBA

C - Typical Capacitance (pF)

VR- Reverse Voltage (V)

SD101AWS, SD101BWS, SD101CWS

www.vishay.com Vishay Semiconductors

Rev. 2.1, 14-Oct-16 3Document Number: 85680

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE DIMENSIONS in millimeters (inches): SOD-323

Rev. 6 - Date: 23.Sept.2016

17443

Document no.: S8-V-3910.02-001 (4)

Created - Date: 24.August.2004

Footprint recommendation:

0.6 [0.024]

1.1 [0.043]

1.5 [0.059]

2.50 [0.098]

2.85 [0.112]

1.60 [0.063]

1.95 [0.077]

0° - 8°

0.25 [0.010]

0.40 [0.016]

Cathode bar

0.20 [0.008]

0.40 [0.016]

0.8 [0.031]

0.2 [0.008]

1.15 [0.045]

0.10 [0.004]

0.1 [0.004] max.

0.15 [0.006]

1.6 [0.063]

0.8 [0.031] 0.8 [0.031]

Legal Disclaimer Notice

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Revision: 08-Feb-17 1Document Number: 91000

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SD101BWS-V-GS08 SD101AWS-V-GS08 SD101CWS-V-GS08 SD101CWS-V-GS18 SD101AWS-V-GS18

SD101BWS-V-GS18 SD101CWS-G3-08 SD101AWS-HE3-18 SD101CWS-E3-18 SD101AWS-G3-08 SD101AWS-

HE3-08 SD101AWS-E3-18 SD101CWS-HE3-18 SD101BWS-E3-18 SD101BWS-G3-18 SD101BWS-E3-08

SD101BWS-G3-08 SD101CWS-HE3-08 SD101AWS-G3-18 SD101CWS-G3-18 SD101AWS-E3-08 SD101BWS-

HE3-08 SD101CWS-E3-08 SD101BWS-HE3-18