_ SANYO ac SEMICONDUCTOR CORP oe: The transistors used in the video output circuits with wide band and large output amplitude specifications should have the following characteristics: : -Excellent high-frequency characteristics at high withstand voltage -Low collector capacitance -Large maximum operating current High surge-breakdown level se The functions of the video output circuit are determined by those characteristics. Sanyo, with the above relationship between video output circuit and video output transistor in mind, has been improving the characteristics of the video output transistors with the original process technologies, FBET and LSBT. The video output tran- sistor series products are already on the market and can be used in a wide range of application fields. Functional Comparison(with Sanyo's conventional devices) Parameter Compared to Conventional devices Current (IC max) 5 times larger Cut-off frequency MOS capacitance Surge handing capability 6 times ~ - | ; Reduction by 30% 32E D Doubled * 2 ES = eqt?O?b 000930e Transistors for Video 0 FBET/LSBT process high-withstand voltage transistors for wide band video output utpu Sat A att Ee Re ee re ae ee A < 4< < J Personal computers and canicam | Graphics | FAA 1 ae personal computers D0 medical . 2803595 (TRI) 300+ eseeeerd Cesteucadecreeersefeaseeedd.. FE 04271 (TA) = 4569 = 4a S 28A1407/25C3597 ~ __p2SC3595 (TRI) . ~ [ Lescaezl AD 8 e00+ : ee 2 8 Ee mo a g i *HDTV | 7] aaj 4n9/2g09596 = ESAT TAY 28 CHS - | 8gai4d/escasga s - eed 2SA1406/2SC3600 8 ee Amon OES. axar/eccusgal 2SAN407/2SC3601 TOD fe ----f--neeeneottaeceeeeesctane Le EDTV S 1696/2SC3951 2SA1405/28C9599 ; * BSA 490/28C9790 ascaae BAVRSCY -, BSA980/2803502 IEE pecans TAL) * . f | av Tvs *-28G3604(TAI) } ~ g i 10 20 30 5 | 70100 eno 300 a - +. Video frequency, f(MHz) Features of the FBET/LSBT process technology FBET: Fold Back Electrode Transistor LSBT: Locally Shallowed Base Transistor _ ~FBET process technology > *" @{sometric cross section. in the conventional extended electrode structure devices, the ; FBET/LSBT = 7 Te Fe eT MOS capacitance can be remarkably reduced by making the both bonding pads folded back over the operating insulating films under the pads. TF LSBT process technology . . .- . The fr characteristics can be improved by making the base lectively, er ee : a With this technology, the withstand voltage and electrostatic _ breakdown are not lowered, Le Wier FS a we Fee eT extended base electrode, cavers @ part of the collector layer : : and the insulating region produce the needless MOS capacitance, _f - base and emitter electrodes two-layered, respectively. That is : : Ee part with | region shallow* and other regions shallow or deep se- ~ # wee wer Le - ee ne Y UE dept ay me She Mn emit wt et wegen i ae tonto anton HO, Hokey ae WPS ok ew void Baeeg SANYO SEMICONDUCTOR CORP. a W299 7076. g009303 a = m - 7-3/-/5--- A a (video frequency) Application field fun 25 . Vesa: Pw *VcE0 | : wi cane P max ~ MAD > typ * (MHz) Cob ~ = typ- (pF) @ Recommended video output transistor line- Up for cascade connection + emitter follower circuit ms > Package type aon #% Under development 8SCs504 1,60: 0.05} ~ BOO... 2 La Genoa nn Dear 0.1 oafeT6O RBLT => EONGML =p {up to SOM) > F * BSAIa80/2SC3502 - 2 =e00 =f > Ol 150 BB/L2 - _-TO=126 esoasso wn 2 - f 20 0.5 - 2.0G ~ 6.0 - ~TO-126ML. CAD/CAM 2SA1896/2SC3951 . 70 .. 0.3 600 -3.1/2.4 ~~ =. FQ-126ML SAI 97/2SC3952 2 0.6 -| 700 6.4/3.6 > TO-126ML. (up to 80MHz) - PSAI8I8/2S02959 120 120 0.2. * 400 : 2.8/2.1 ~FO-126ML ~ 2BA1840/2SC3956 200 - 200 0.1 800 2.4/1.9 - ~ TO-126ML. _ 8S 08595 > 30. eo 0.5 - 2,0G 6.0 - TOQ-126 Graphics/DTP " PSA1402/2S03598 80 _ 6O- ft 0.3- _ 700 9.0/2.8 - FO-le8 {up to 200MHz) | . - PSA1405/2S09599 ~ yea | yea _ 0.3 7 00 ~ hae TO-126 ane a . La ae ABOU ~ 0,8 Be 7 FE a0. >= -TO-128 FAA. BBA 00/2S0589) ee | 08 2 800 BaABA, =| | FO-126 - medical ~~ aScdsds- hee* f Aa 'TO-126eML. - lup to soowt) eSC4ai 0.8. bea | 4d of 7 -TO-Peg- F2SC3s60 le 08 | 206 - 8.0 TO-126ML -- EDTV | - SAI A804 Soar a0 | Tb ce A28 * FO-16ML. lup to eo) | i * esCaa7e 800 - he. t o,f ag ek "-TO-WBML. - PSAl 749/2SC4564- 200 200 - 0.3 - .- Mio. . - .0/4.2 TO-]e6ML HDTV {up to 30MHz) = BSAITTI/2SC4623 260 | 280 03 400 ~ .0/4.2.. _ TO-TeeM. TS9767%/TSa76e%. - ago -300 08: ~ 300 .. -. 8,9/5:3. - Sample video output transistor circuit etree en te tee foe a ee *TO-126ML FAD tsar nd hoe Pa oan Pniidns yamide steambinne often d |* ares y TV tat Aue Ae we wR PAIN Pa capa Het Tare Cpa be CEI Neath Ta shad AT ideal vetmtenai IN aD yak ey Som ane! oe