Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3517S03
K-BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL GaAs HJ-FET
Document No. PG10787EJ01V0DS (1st edition)
Date Published November 2009 NS
FEATURES
• Super low noise figure, high associated gain
NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz
• K-band Micro-X plastic (S03) package
APPLICATIONS
• 20 GHz band DBS LNB
• Other K-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Marking
Supplying Form
NE3517S03-T1C
NE3517S03-T1C-A
S03 (Pb-Free)
2 kpcs/reel
E
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
NE3517S03-T1D
NE3517S03-T1D-A
10 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3517S03-A
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Symbol
Ratings
Unit
VDS
4
V
VGS
3
V
ID
IDSS
mA
IG
100
A
Ptot Note
165
mW
Tch
+125
C
Tstg
65 to +125
C
Note Mounted on 1.08 cm2 1.0 mm (t) glass epoxy PCB
Data Sheet PG10787EJ01V0DS
2
NE3517S03
RECOMMENDED OPERATING CONDITIONS (TA = +25C)
Symbol
MIN.
TYP.
MAX.
Unit
VDS
1
2
3
V
ID
5
10
15
mA
Pin
0
dBm
ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
IGSO
VGS = 3 V
0.5
10
A
IDSS
VDS = 2 V, VGS = 0 V
25
40
70
mA
VGS (off)
VDS = 2 V, ID = 100
A
0.2
0.7
1.5
V
gm
VDS = 2 V, ID = 10 mA
40
55
mS
NF
VDS = 2 V, ID = 10 mA, f = 20 GHz
0.7
1.0
dB
Ga
11.0
13.5
dB
Data Sheet PG10787EJ01V0DS
3
NE3517S03
TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)
Remark The graphs indicate nominal characteristics.
Data Sheet PG10787EJ01V0DS
4
NE3517S03
S-PARAMETERS
Data Sheet PG10787EJ01V0DS
5
NE3517S03
RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm)
RT/duroid 5880/ROGERS
t = 0.254 mm
r = 2.20
tan delta = 0.0009 @10 GHz
Au-flash plate
Data Sheet PG10787EJ01V0DS
6
NE3517S03
PACKAGE DIMENSIONS
S03 (UNIT: mm)
Data Sheet PG10787EJ01V0DS
7
NE3517S03
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature) : 260C or below
Time at peak temperature : 10 seconds or less
Time at temperature of 220C or higher : 60 seconds or less
Preheating time at 120 to 180C : 12030 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
IR260
Partial Heating
Peak temperature (terminal temperature) : 350C or below
Soldering time (per side of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
8 Data Sheet PG10787EJ01V0DS
NE3517S03
Caution GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the
following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.