1N5400G-1N5408G Vishay Lite-On Power Semiconductor 3.0A Glass Passivated Rectifier Features D Glass passivated die construction D Diffused junction D High current capability and low forward voltage drop D Surge overload rating to 125A peak D Plastic material - UL Recognition flammability classification 94V-0 14 423 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage =DC DC Bl Blocking ki voltage lt Test Conditions Type 1N5400G 1N5401G 1N5402G 1N5403G 1N5404G 1N5405G 1N5406G 1N5407G 1N5408G Peak forward surge current Average forward current TA=55C Junction and storage temperature range Symbol VRRM =VRWM =V VR IFSM IFAV Tj=Tstg Value 50 100 200 300 400 500 600 800 1000 125 3 -65...+150 Unit V V V V V V V V V A A C Typ Unit V mA mA ms Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Reverse recovery time Diode capacitance Thermal resistance junction to ambient Rev. A2, 24-Jun-98 Test Conditions IF=3A TA=25C TA=125C IF=0.5A, IR=1A, Irr=0.25A VR=4V, f=1MHz Type Symbol VF IR IR trr CD RthJA Min 40 32 Max 1.1 5 100 2 pF K/W 1 (4) 1N5400G-1N5408G Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified) 200 C D - Diode Capacitance ( pF ) IFAV - Average Forward Current ( A ) 4 3 2 1 Single phase half-wave 60 Hz resistive or inductive load 0 0 25 50 75 100 125 175 1 100 IR - Reverse Current ( m A ) IF - Forward Current ( A ) 100 Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 100 10 1.0 0.1 Tj = 125C 10 1.0 Tj = 25C 0.1 0.01 0.4 15567 0.6 0.8 1.0 1.2 1.4 1.6 VF - Forward Voltage ( V ) 200 0 1.8 15570 Figure 2. Typ. Forward Current vs. Forward Voltage IFSM - Peak Forward Surge Current ( A ) 10 VR - Reverse Voltage ( V ) 15569 Figure 1. Max. Average Forward Current vs. Ambient Temperature 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage 8.3 ms Single Half-Sine-Wave JEDEC method 100 10 1 15568 100 10 150 Tamb - Ambient Temperature ( C ) 15566 Tj = 25C f = 1 MHz 10 100 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 1N5400G-1N5408G Vishay Lite-On Power Semiconductor Dimensions in mm 14445 Case: molded plastic Polarity: cathode band Approx. weight: 1.12 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4) 1N5400G-1N5408G Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) Rev. A2, 24-Jun-98