www.DataSheet.in ATF-13284 | | PACKARD 1-16 GHz Low Noise Gallium Arsenide FET Features - 84 Plastic Package e Low Noise Figure: 0.7 dB typical at 4 GHz e High Associated Gain: 15.0 dB typical at 4 GHz aust (0.020) >| Source e High Output Power: 18.0 dBm typical P: as at 4 GHz Low Cost Plastic Package Gate / DRAIN Tape-and-Reel Packaging Option Availabie' SOURCE Description 215 (0.085) The ATF-13284 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a low cost plastic package. Its low noise figure makes this device | /F appropriate for use in the first or second stages of low noise si }: e * 0050 amplifiers operating in the 1-16 GHz frequency range. vsezo25 |) This GaAs FET device has a nominal 0.3 micron gate length (0.060 + 0.010) = jes with a total gate periphery of 250 microns. Proven gold ' | 5.48 + 0.25 based metallization systems and nitride passivation assure 0.51 (0.215 + 0.010) a rugged, reliable device. (0.020) DIMENSIONS ARE IN MILLIMETERS (INCHES) OPTIMUM NOISE FIGURE AND ASSOCIATED GAIN va. FREQUENCY Tas 25C, Vos = 2.5 V, Ing = 20 mA Noise Parameters: Vps = 2.5 V, los = 20 mA Freq. | NFo | Gamma Opt GHz dB Mag Ang Fin/50 o 8 % 1.0 0.6 92 10 1.3 = & 2.0 06 85 21 1.2 4.0 0.7 75 54 1.0 20 4.0 60 80 10.0 120 160 8.0 12 57 144 9.3 Frequency, GHz 12.0 1.6 51-118 0.1 Electrical Specifications, Ta = 25C Symbol Parameters and Test Conditions Units Min. Typ. Max. NFo Optimum Noise Figure: f= 4.0 GHz dB 0.7 08 VDS = 2.5 V, IDS = 15 - 30 mA f = 12.0 GHz dB 1.6 GA Gain @ NFo: Vos = 2.5 V, IDS = 15-30 mA f= 4.0 GHz dB 13.0 15.0 f= 12.0 GHz dB 8.5 P+ dB Power Output @ 1 dB Gain Compression: f= 4.0 GHz dBm 18.0 Vos = 4V, Ips = 40 mA Gi4B 1dB Compressed Gain: Vps = 4 V, IDs = 40 mA f= 4.0 GHz dB 15.0 } gm Transconductance: Vps = 2.5 V, Vas = 0 V mmho 25 55 loss Saturated Drain Current: Vps = 2.5 V, Vas=0V mA 40 50 90 VP Pinchoff Voltage: Vps = 2.5 V, IDS = 1 mA v 4.0 -1.5 0.5 Note: 1. Refer to PACKAGING section Tape-and-Reel Packaging tor Surface Mount Semiconductors. 7-26www.DataSheet.in ATF-13284, 1-16 GHz Low Noise Gallium Arsenide FET = Absolute Maximum Ratings Absolute . . Parameter Symbol Maximum Part Number Ordering Information Drain-Source Voltage Vps 45V Part Number Devices Per Reel Reel Size Gate-Source Voltage Ves -4V ATF-13284-TR1 1000 7 Drain Current Ips loss ATF-13284-TR2 4000 13 Total Power Dissipation? Pr 225 mW ATF-13284-STR 1 strip Channel Temperature TCH 175C For more information, see Tape and Reel Packaging Storage Temperature TSTG 65C to +150C for Semiconductor Devices, page 14-14. Thermal Resistance: Qc = 325C/W; TcH = 150C Liquid Crystal Measurment: 1 wm Spot Size* . Notes: Typical Performance, Ta = 25C 1. Operation of this device above any one of these parameters {unless otherwise noted) may cause permanent damage. 2. Case Temperature = 25C. 3. Derate at 3.1 mW/C for Tc > 102C. 4, The smail spot size of this technique results in a higher, though more accurate determination of g,, than do alternate methods. See MEASUREMENTS section for more information. INSERTION POWER GAIN, MAXIMUM AVAILABLE GAIN AND MAXIMUM STABLE GAIN vs. FREQUENCY Vos = 2.5 V, lps = 20 mA 8 s & 2.0 4.0 60 80 100 120 160 Frequency, GHz Typical Scattering Parameters: Common Source, Zo = 50 Q Ta = 25C, Vos = 2.5 V, Ins = 20 MA Freq. Si Sa Siz S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.5 -99 -11 10.2 3.22 169 36.5 015 80 50 -11 1.0 -98 -21 102 3.24 157 32.8 023 74 50 -17 2.0 97 -33 10.3 3.26 145 26.9 045 67 -50 24 3.0 91 ~52 10.4 3.30 127 -23.2 069 55 49 -37 4.0 84 -73 10.6 3.36 108 -20.7 092 42 A7 50 5.0 77 -91 10.2 3.23 91 -19.3 109 31 46 1 6.0 70 -108 9.8 3.08 76 -18.3 121 22 45 71 7.0 64 -123 9.3 2.93 62 ~17.6 132 14 43 -79 8.0 59 -142 91 2.85 47 -16.9 153 5 39 -89 9.0 54 166 8.8 2.74 30 -16.3 153 5 33 104 10.0 51 168 8.3 2.59 14 ~16.0 -159 15 25 123 11.0 51 147 74 2.34 -2 ~16.2 155 22 19 -151 12.0 48 127 7.0 2.25 -12 -16.0 159 30 14 -171 13.0 51 108 6.7 2.17 -26 -15.9 161 -35 12 177 14.0 57 87 6.1 2.02 41 -16.0 -160 46 12 144 15.0 59 70 5.6 1.90 -57 16.1 158 -3 15 102 16.0 62 58 5.1 1.79 ~66 16.1 157 -59 21 74 17.0 63 46 46 1.69 -80 16.1 157 -67 28 60 18.0 64 35 3.7 1.53 ~93 -16.1 -157 84 36 47 7-27