eGaN(R) FET DATASHEET EPC2010 EPC2010 - Enhancement Mode Power Transistor VDSS , 200 V RDS(ON) , 25 mW ID , 12 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN's exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings VDS ID VGS TJ TSTG Drain-to-Source Voltage 200 Continuous (TA =25C, JA = 17) 12 Pulsed (25C, Tpulse = 300 s) 60 Gate-to-Source Voltage 6 Gate-to-Source Voltage -5 Operating Temperature -40 to 125 Storage Temperature -40 to 150 PARAMETER EPC2010 eGaN(R) FETs are supplied only in passivated die form with solder bars Applications * High Speed DC-DC conversion * Class D Audio * Hard Switched and High Frequency Circuits V A Benefits * Ultra High Efficiency * Ultra Low RDS(on) * Ultra low QG * Ultra small footprint V C TEST CONDITIONS MIN 200 TYP MAX UNIT Static Characteristics (TJ= 25C unless otherwise stated) BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 200 A IDSS Drain Source Leakage VDS = 160 V, VGS = 0 V 50 150 Gate-Source Forward Leakage VGS = 5 V 1 3 Gate-Source Reverse Leakage VGS = -5 V 0.2 1 1.4 2.5 V 18 25 m IGSS VGS(TH) Gate Threshold Voltage RDS(ON) Drain-Source On Resistance VDS = VGS, ID = 3 mA 0.7 VGS = 5 V, ID = 6 A V A mA Source-Drain Characteristics (TJ= 25C unless otherwise stated) VSD Source-Drain Forward Voltage IS = 0.5 A, VGS = 0 V, T = 25C 1.8 IS = 0.5 A, VGS = 0 V, T = 125C 1.8 V All measurements were done with substrate shorted to source. PARAMETER Thermal Characteristics TEST CONDITIONS MIN Dynamic Characteristics (TJ= 25C unless otherwise stated) CRISSJC RJB COSS R CRSSJA Thermal InputResistance, CapacitanceJunction to Case Thermal Junction to Board VDS = 100 V, VGS = 0 V OutputResistance, Capacitance Thermal Resistance, Junction to Ambient (Note 1) Reverse Transfer Capacitance Note 1: RJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. Total Gate Charge (VGS = 5 V) G SeeQhttp://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details. QGD Gate to Drain Charge VDS = 100 V, ID = 12 A EPC - EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2013 | QGS Gate to Source Charge QOSS Output Charge VDS = 100 V, VGS = 0 V TYP TYP MAX 480 2.4 270 16 540 C/W 350 C/W pF C/W 9.2 56 12 5 7.5 1.7 2.6 1.3 2 40 50 UNIT | nC PAGE 1 Source-Drain Characteristics (TJ= 25C unless otherwise stated) Source-Drain Forward Voltage eGaN(R)VSDFET DATASHEET IS = 0.5 A, VGS = 0 V, T = 25C 1.8 IS = 0.5 A, VGS = 0 V, T = 125C 1.8 V EPC2010 All measurements were done with substrate shorted to source. PARAMETER TEST CONDITIONS MIN TYP MAX 480 540 270 350 UNIT Dynamic Characteristics (TJ= 25C unless otherwise stated) CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance 9.2 12 QG Total Gate Charge (VGS = 5 V) 5 7.5 QGD Gate to Drain Charge 1.7 2.6 QGS Gate to Source Charge 1.3 2 QOSS Output Charge 40 50 QRR Source-Drain Recovery Charge VDS = 100 V, VGS = 0 V VDS = 100 V, ID = 12 A VDS = 100 V, VGS = 0 V pF nC 0 All measurements were done with substrate shorted to source. 60 Figure 1: Typical Output Characteristics VGS = 5 VGS = 4 VGS = 3 VGS = 2 30 20 40 30 20 10 10 0 0.5 1 1.5 2 VDS - Drain to Source Voltage (V) 2.5 0 3 Figure 3: RDS(ON) vs VG for Various Current 1 1.5 2 2.5 3 VGS - Gate to Source Voltage (V) 3.5 4 4.5 RDS(ON) - Drain to Source Resistance (m) 60 50 40 30 20 ID = 10 A ID = 20 A ID = 40 A ID = 60 A 10 0 0.5 Figure 4: RDS(ON) vs VG for Various Temperature 60 RDS(ON) - Drain to Source Resistance (m) 25C 125C VDS = 3 V 40 0 Figure 2: Transfer Characteristics 50 ID - Drain Current (A) 50 ID - Drain Current (A) 60 2 2.5 3 3.5 4 4.5 VGS - Gate to Source Voltage (V) 5 5.5 25C 125C 50 40 30 20 10 0 2 2.5 EPC - EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2013 | 3 3.5 4 4.5 5 5.5 VGS - Gate to Source Voltage (V) | PAGE 2 eGaN(R) FET DATASHEET EPC2010 Figure 5: Capacitance 1 COSS = CGD + CSD CISS = CGD + CGS CRSS = CGD 0.6 0.4 0.2 0 50 ISD - Source to Drain Current (A) 150 2 0 200 VDS - Drain to Source Voltage (V) 25C 125C 30 20 10 0 0.5 1 1.5 2 2.5 3 VSD - Source to Drain Voltage (V) 3.5 4 1 2 3 4 5 QG - Gate Charge (nC) 6 Figure 8: Normalized On Resistance vs Temperature ID = 12 A VGS = 5 V 2.5 2 1.5 1 0.5 0 -20 4.5 Figure 9: Normalized Threshold Voltage vs Temperature 1.15 0 3 40 1.2 .03 0 20 40 60 80 100 TJ - Junction Temperature ( C ) 120 140 Figure 10: Gate Current 25C 125C ID = 3 mA .025 1.1 IG - Gate Current (A) Normalized Threshold Voltage (V) 100 Figure 7: Reverse Drain-Source Characteristics 50 0 3 1 Normalized On-State Resistance - RDS(ON) 60 ID = 12 A VD = 100 V 4 VG - Gate Voltage (V) C - Capacitance (nF) 0.8 0 Figure 6: Gate Charge 5 1.05 1 0.95 .02 .015 .01 0.9 .005 0.85 0.8 -20 0 20 40 60 80 100 120 140 0 0 1 TJ - Junction Temperature ( C ) 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) All measurements were done with substrate shortened to source. EPC - EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2013 | | PAGE 3 eGaN(R) FET DATASHEET EPC2010 Figure 11: Transient Thermal Response Curves Normalized Maximum Transient Thermal Impedance ZJB, Normalized Thermal Impedance 1 Duty Factors: 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 t1 Single Pulse 0.001 0.0001 PDM 10-5 10-4 t2 Notes: Duty Factor: D = t1/t2 Peak TJ = PDM x ZJB x RJB + TB 10-3 10-2 10-1 1 10 100 tp, Rectangular Pulse Duration, seconds Normalized Maximum Transient Thermal Impedance ZJC, Normalized Thermal Impedance 1 Duty Factors: 0.5 0.1 0.2 0.1 PDM 0.05 t1 0.01 0.02 0.01 Notes: Duty Factor: D = t1/t2 Peak TJ = PDM x ZJC x RJC + TC Single Pulse 0.001 t2 10-6 10-5 10-4 10-3 10-2 10-1 1 tp, Rectangular Pulse Duration, seconds Figure 12: Safe Operating Area I D- Drain Current (A) 100 10 10 s 100 s limited by RDS(ON) 1 0.1 1 ms 10 ms 100 ms/DC TJ = Max Rated, TC = +25C, Single Pulse 0.1 1 10 100 1000 VDS - Drain-Source Voltage (V) EPC - EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2013 | | PAGE 4 eGaN(R) FET DATASHEET EPC2010 TAPE AND REEL CONFIGURATION 4mm pitch, 12mm wide tape on 7" reel b e d g f Loaded Tape Feed Direction Die orientation dot 7" reel c a Gate solder bar is under this corner Die is placed into pocket solder bar side down (face side down) EPC2010 (note 1) Dimension (mm) a b c (note 2) d e f (note 2) g target min max 12.0 1.75 5.50 4.00 4.00 2.00 1.5 11.9 1.65 5.45 3.90 3.90 1.95 1.5 12.3 1.85 5.55 4.10 4.10 2.05 1.6 Note 1: MSL1 (moisture sensitivity level 1) classified according to IPC/JEDEC industry standard. Note 2: Pocket position is relative to the sprocket hole measured as true position of the pocket, not the pocket hole. DIE MARKINGS 2010 YYYY Die orientation dot ZZZZ Gate Pad solder bar is under this corner DIE OUTLINE A 3 Lot_Date Code Marking line 2 Lot_Date Code Marking Line 3 2010 YYYY ZZZZ MIN micrometers Nominal MAX 4 3524 1602 1379 577 262 245 600 3554 1632 1382 580 277 250 600 3584 1662 1385 583 292 255 600 f X5 DIM 5 6 7 c B d X2 2 Part # Marking Line 1 EPC2010 f Solder Bar View Laser Markings Part Number 1 e g A B c d e f g g X4 (685) 100 +/- 20 SEATING PLANE 815 Max Side View EPC - EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2013 | | PAGE 5 eGaN(R) FET DATASHEET EPC2010 The land pattern is solder mask defined. RECOMMENDED LAND PATTERN (units in m) 3 4 5 6 7 802 1 Pad no. 1 is Gate; Pads no. 3, 5, 7 are Drain; Pads no. 4, 6 are Source; Pad no. 2 is Substrate 2 600 600 X4 1362 1632 560 3554 230 230 X5 Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein to improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. eGaN(R) is a registered trademark of Efficient Power Conversion Corporation. Information subject to change without notice. U.S. Patent 8,350,294 Revised February, 2013 EPC - EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2013 | | PAGE 6