This is information on a product in full production.
July 2014 DocID024572 Rev 3 1/9
9
T1235T-8T
12 A Snubber less™ T r i ac
Datasheet − production data
Features
•Medi um current Triac
•High static and dynamic commutation
•Three quadrant s
•ECOPACK®2 compliant component
Applications
•General purpo se AC line load switching
•Motor control circuits
•Sm all home applianc es
•Lighting
•Inrush current limiting circuits
•Overvoltage crowbar protection
Description
Available in through-hole package, the
T1235T-8T Triac can be used for the on/off or
phas e angle control function in general purpose
AC switching where high commutation capability
is required. This device can be used without a
snubber circuit when the limits defined in this
datasheet are respected.
TM: Snubberless is a trademark of STMicroelectronics
Table 1. Device summary
Symbol Value Unit
IT(rms) 12 A
VDRM, VRRM 800 V
VDSM, VRSM 900 V
IGT 35 mA
A2
A1
G
A1
A2
A2
G
TO-220AB
(T1235T-8T)
www.st.com
Characteristics T1235T-8T
2/9 DocID024572 Rev 3
1 Characteristics
Table 2. Absolute ratings (limiting values, Tj = 25 °C unless other wise stated)
Symbol Parameter Value Unit
IT(rms) On-state rms current (ful l sine wave) Tc = 131 °C 12 A
ITSM Non repet itive surge peak on-state
cu rrent (full cycle, Tj initial = 2 5 °C) F = 50 Hz t = 20 ms 90 A
F = 60 Hz t = 16.7 ms 95
I²tI
²t val u e fo r fu s in g , T j initi a l = 25 ° C tp = 10 ms 54 A²s
VDRM,
VRRM Repetitive surge peak off-state voltage Tj = 150 °C 600 V
Tj = 125 °C 800
VDSM,
VRSM Non repetitive surge peak off- state voltage tp = 10 ms 900 V
dI/dt Cri tical rate of rise of on-state curr ent
IG = 2 x IGT, tr ≤ 100 ns F = 100 Hz 100 A/µs
IGM Pe ak gate current tp = 20 µs Tj = 150 °C 4 A
PG(AV) Average gat e power dissipation Tj = 150 °C 1 W
Tstg
Tj
Storage junction temperatu re ra nge
Ope rating jun cti on temperature range - 40 to + 150
- 40 to + 150 °C
TLMaximum lead temperature for soldering during 10 s 260 °C
Table 3. Electrical characteri stics (Tj = 25 °C, unless otherwise specified)
Symbol Test conditions Quadrant Value Unit
IGT (1)
1. Minimum IGT is guar anteed at 5% of I GT max.
VD = 12 V, RL = 30 ΩI - II - III Min. 1.75 mA
Max. 35
VGT VD = 12 V, RL = 30 ΩI - II - III Ma x . 1.3 V
VGD VD = VDRM, R L = 3.3 kΩ, Tj = 125 °C I - II - III Min. 0.2 V
IH (2)
2. For both polarities of A2 ref erenced to A1
IT = 500 mA Max. 40 m A
ILIG = 1.2 IGT I - III Max. 60 mA
II 65
dV/dt VD = 536 V, gate open Tj = 125 °C Min. 2000 V/µs
VD = 402 V, gate open Tj = 150 °C 1000 V/µs
(dI/dt)c Without snubber (dV/dt)c > 20 V/µs) Tj = 125 °C Min. 12 A/ms
Tj = 150 °C 6
DocID024572 Rev 3 3/9
T1235T-8T Characteristics
Table 4. Static characteristics
Symbol Test conditions Value U nit
VT (1) ITM = 17 A, tp = 380 µs Tj = 25 °C Max. 1.55 V
Vt0 (1) Threshold voltage Tj = 150 °C Max. 0.85 V
Rd (1) Dynamic resistance Tj = 150 °C Max. 37 mΩ
IDRM
IRRM
VDRM = VRRM = 800 V Tj = 25 °C Max. 7.5 µA
Tj = 125 °C 1 mA
VDRM = VRRM = 600 V Tj = 150 °C Max. 2.7
1. For both polarit ies of A2 referenced to A1
Table 5. Thermal resistance
Symbol Parameter Value Unit
Rth(j-c) Junction to ca se (AC) 1.3 °C/W
Rth(j-a) Junct ion to ambient 60 °C/W
Figure 1. Maximum power dissipation versus
on-state rms current (full cycle) Figure 2. On-state rms current versus case
temperature (full cycle)
P(W)
0
2
4
6
8
10
12
14
16
024681012
180°
I(A)
T(RMS)
I(A)
T(RMS)
0
2
4
6
8
10
12
14
0 25 50 75 100 125 150
T (°C)
C
Figure 3. On-st ate rms current versus ambient
tempe rature (free air convecti on) Figure 4. Relative variation of therm al
impeda nce vers us pu lse duration
I(A)
T(RMS)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 25 50 75 100 125 150
T (°C)
a
K = [Zth / Rth]
1.0E-02
1.0E-01
1.0E+00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04
Zth(j-c) Zth(j-a)
tp(s)
Characteristics T1235T-8T
4/9 DocID024572 Rev 3
Figure 5. On-state characteristics (maximum
values) Figure 6. Surge peak on-state current versus
number of cycl es
I(A)
TM
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Tj=25 °C
Tj=150 °C V (V)
TM
T max:
j
V = 0.85 V
t0
R = 37 m
dW
I(A)
TSM
0
10
20
30
40
50
60
70
80
90
100
1 10 100 1000
Non repetitive
Tjinitial=25 °C
Non repetitive
Tjinitial=25 °C
Repetitive
TC=131 °C Number of cycles
One cycle
t = 20 ms
Figure 7. Non repetitive surge peak on-state
current and corresponding values of I2tFigure 8. Relative variation of gate trigger
current and gate voltage versus junction
temperature (typical values)
I (A), I²t (A²s)
TSM
10
100
1000
0.01 0.10 1.00 10.00
sinusoidal pulse with width t <10 ms
pt(ms)
p
I²t
ITSM
T initial = 25 °C
j
dl/dt limitation: 100 A / µs
I , V [T ] / I , V [T = 25 °C]
GT GT j GT GT j
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100 125 150
T (°C)
C
VGT
I Q1 - Q2
GT
IQ3
GT
Figure 9. Relative variation of static dV/dt
immunity versus junction temperature (typical
values)
Fi gure 10. Relati ve va riation of holding curren t
and latching current vers us junction
temperature (typical values)
0
1
2
3
4
5
25 50 75 100 125 150
dV/dt [Tj] / dV/dt [Tj= 150 °C]
T
j
(°C)
V
D
=V
R
= 402 V
I , I [T ] / I , I [T = 25 °C]
HL j HL j
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100 125 150
I
H
I
L
T (°C)
j
DocID024572 Rev 3 5/9
T1235T-8T Characteristics
Figure 13. Relative variation of leakage current versus junction temperature for different values of
blocking voltage (typical values)
Figure 11. Relative variation of critical rate of
decrease of main current (dI/dt)c ver sus
reap pl ied (dV /dt)c
Figur e 12. Relative variation of critical rate of
decrease of main current (dI/dt)c versu s
juncti on temperatur e (typical values)
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
0
1
2
3
4
0.1 1.0 10.0 100.0
(dV/dt)c (V/µs)
(dl/dt)c [T ] / (dl/dt)c [T = 150 °C]
jj
0
1
2
3
4
5
6
7
8
9
25 50 75 100 125 150
T (°C)
j
I , I [T ; V , V ] / I , I
DRM RRM j DRM RRM DRM RRM
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
25 50 75 100 125 150
[Tj=125 °C; 800 V]
[Tj=150 °C; 600 V]
T (°C)
j
V = V = 600 V
DRM RRM
V = V = 400 V
DRM RRM
V = V = 800 V
DRM RRM
Pack age information T1235T-8T
6/9 DocID024572 Rev 3
2 Package information
•Epoxy meets UL94, V0
•Lead-free package
•Recomm ended t orque: 0.4 to 0.6 N ·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depe nding on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 14. TO-220AB dimension definitions
A
F
D1
J1
H1
∅P
Q
D
L1
L
b
E
e1
e
L20 L30
b1
c
Resin gate
0.5 mm max.
protrusion(1)
Resin gate
0.5 mm max.
protrusion(1)
(1) Resin gate position accepted in each of the two
position shown as well as the symmetrical opposites
DocID024572 Rev 3 7/9
T1235T -8T Packag e inform ation
Table 6. TO-220AB dimension values
Ref.
Dimensions
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.17 0.18
b 0.61 0.88 0.024 0.035
b1 1.14 1.70 0.045 0.067
c 0.48 0.70 0.019 0.027
D 15.25 15.75 0.60 0.62
D1 1.27 typ. 0.05 typ.
E 10 10.40 0.39 0.41
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.19 0.20
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.24 0.26
J1 2.40 2.72 0.094 0.107
L 13 14 0.51 0.55
L1 3.50 3.93 0.137 0.154
L20 16.40 typ. 0.64 typ.
L30 28.90 typ. 1.13 typ.
∅P 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
Order ing informati on T1235T-8T
8/9 DocID024572 Rev 3
3 Ordering information
Figure 15. Ordering information scheme
4 Revision history
Table 7. Ordering information
Or der code Ma rking Package Wei ght Base qty Del ivery mode
T1235T-8T T1235T-8T TO -220AB 2 .0 g 50 Tube
Table 8. Document revision history
Date Revision Changes
05-Aug-2013 1 I nitial rel ease.
01-Jul-2014 2 Updated Table 2.
28-Jul-2014 3 Updated Table 5.
DocID024572 Rev 3 9/9
T1235T-8T
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