MOTOROLA SEMICONDUCTOR TECHNiC~~., DATA "" ~~ . .. ,, .".,, .. I `, ., . "'2N7000 Advance lqformation Power Field Effect Transistor' ` N-Channel Enhancement Mode Siiicon GateTMOS ,,, . . . are designed for high voltage, high speed power switching applacations such as switching regulators, converters, solenoid and" relay drivers. ~ ,, ,,,, TMO; , ~<> \ ~g,s. ~ ,~.k.\.\.,;;:i /' `,.' . . . CASE 29-02 (TO-226AA] MAXIMUM RATINGS --" :,., --- , r \ Thermal ResistanceJ@q&tio~to'A `:;' ,. ... : ,s., I1 1 Id{onj 1 >,,. .. .. .> 1 -- 75 IF..:6 I I Motorola resewes the right to make changea without further notice to anv products herein to improve reliability, function or design. Motorola does not asaume anv Iiabilitv arising out of the application or use of anv product or circuit described herein; neither doaa it convey anv license under its patent rights nor the rights of others. Motorola and (MJ are registeredtrademarks of Motorola, Inc. - ~ MOTOROLAS: Serniconductetirs. S.A. ~~ AVENUE G~NkRAL-EISENHOWER -31023 TOULOUSE CEDEX - FRANCE F;!",ed ;. m,,.., - ,..,, !.., ,,.,, (B..,.,., L,.. ,,8, *,~oo