BC171...,BC237... NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications The transistors are subdividied into three groups, A, B an C according to their current gain. Types BC171, BC174 and BC237 are available in groups A and B, types BC172 and BC238 in groups A, B, and C, and types BC173 and BC239 in groups B and C. BC173 and BC239 are low noise types. Absolute Maximum Ratings t ; min.12,5- 46 max.2) [ | max.Q5 425 Plastic package ~ JEDEC TO-92 TO-18 compatible The case is impervious to light Weight approximately 0.18 g Dimensions in mm Symbol Value Unit Collector Emitter Voltage BC174 Voces 70 Vv BC171, BC237 Voces 50 Vv BC172, BC173, BC238 Voces 30 V BC239 Collector Emitter Voltage BC174 Vceo 70 Vv BC171, BC237 Veceo 45 Vv BC172, BC173, BC238 Veceo 25 Vv BC239 Emitter Base Voltage BC171, BC237 VeBo 6 Vv BC172, BC173, BC238 Veso 5 Vv BC239, BC174 Collector Current Ic 100 mA Peak Collector Current lom 200 mA Base Current lp 50 mA Power Dissipation at Tamp = 25 C Prot 300 mw Junction temperature T; 150 C Storage Temperature Range Ts 55... +150 C ") Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case 30BC171...,BC237... Characteristics at Tam = 25C Symbol Min. Typ. Max. Unit h-Parameters at Vce = 5 V, Ip = 2 mA, f = 1 KHz Small Signal Current Gain Current Gain Group A Nie 125 220 260 - B hte 240 330 500 Cc Ne 450 600 900 _ Input Impedance Current Gain Group A hie 1.6 2.7 4.5 kQ B hie 3.2 4.5 8.5 kO Cc hie 6 8.7 15 kO Output Admittance Current Gain Group A Noe - 18 30 ps B Hoe - 30 60 us Cc Hoe - 60 110 BS Reverse Voltage Transfer Ratio Current Gain Group A Ne ~ 1.5-10% - - B Dre - 2-10% - - c hie - 3-107 - - DC Current Gain at Vce =5V,Ilc = 0.01 mA Current GainGroup A Hee 90 - B Hee - 150 - - c hee - 270 - - atVce = 5V, Ilo =2mMA Current Gain Group A Nee 170 - - B hee 290 ~ Cc Nee - 500 - - at Vcc = 5 V, lo = 100 mA Current Gain Group A hre - 120) - - B hre - 200" - ~ c hee - 400) - - Collector Saturation Voltage atlo = 10 mA, lg =0.5mA VeeEsat - 0.07 0.2 Vv at lo = 100 mA, Ip = 5MA Voesat - 0.2 0.6 Vv Base Saturation Voltage at le = 10 mA, Ip = 0.5 mA Veesat - 0.73 0.83 Vv at lo = 100 mA, Is =5mA Vesat - 0.87 1.05" V Base Emitter Voltage at Vcr = 5 V, Io = 0.1 mA Vee - 0.55 - Vv at Vee =5V, Ilo =2mMA Vee 0.55 0.62 0.7 Vv at Vor = 5 V, Ilo = 100 mA VBE - 0.83 - Vv Collector Cutoff Current at Vcr = 60 V BC174 Ices - 0.2 15 nA at Vcr = 50 V BC171, BC237 Ices - 0.2 15 nA at Vcc = 30 V BC172, BC173, BC238 Ices - 0.2 15 nA BC239 at Voce = 60 V, Tamp = 125 C BC174 Ices - 0.2 4 BA at Voce = 50 V, Tamp = 125C BC171, BC237 Ices - 0.2 4 BA at Voge = 30 V, Tam = 125 C BC172, BC173, BC238 loes - 0.2 4 LA BC239 Collector Emitter Breakdown Voltage at lk = 2mA BC174 Vipryceo 64 _- _ Vv BC171, BC237 Vier)cEO 45 - Vv BC172, BC173, BC238 Vipr)yceo 25 - - Vv BC239 Emitter Base Breakdown Voltage at le = 1 nA BC174, BC172, BC173 Vier)eBo 5 - - Vv BC238, BC239 BC171, BC237 Vipr)eBo 6 - Vv 31BC171..,BC237... Characteristics, continuation Symbol Min. Typ. Max. Unit Gain Bandwidth Product at Vce = 3 V, Io = 0.5 mA, f = 100 MHz fr = 85 - MHz at Vee = 5 V, Ic = 10 mA, F = 100 MHz fr 150 250 - MHz Collector Base Capacitance at Vcgo = 10 V, f = 1 MHz Ccso - 3.5 6 pF Emitter Base Capacitance at Vego = 0.5 V, f = 1 MHz CeBo - 8 - pF Noise Figure at Voce = 5 V, Ip = 0.2 MA, Re = 2kO, f = 1 kHz BC174, BC171, BC172 F 2 10 dB BC237, BC238 BC173, BC239 F - 4 dB at Vee =5V, Ic = 0.2 mA, Re = 2 kQ, f = 30 Hz... 15 kHz BC173, BC239 F - - 4 dB Thermal Resistance Junction to Ambient Rina ~ - 4207) K/W 1) Not valid for BC173 and BC239 2)Valid provided that leads are kept at ambient temperature at a distance of 2mm from case Admissible power dissipation Pulse thermal resistance versus ambient temperature versus pulse duration Valid provided that leads are kept at ambient temperature Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case at a distance of 2 mm from case mw BC 171...,BC 237... K/W BC 171... BC 237... 500 : 103 5 400 'thA 200 N \ N 2 1 100 \ . IN N\ 2 0 \ 107 0 100 200 C 10 102 104 103 102 107 1 10 1075 _ fp 32BC171...,BC237... DC current gain versus collector current BC171..., BC237 Common emitter collector characteristics mA BC171...,BC237 100 07 Ppp 400 I 80 300 200 60 100 40 50 40 30 0.1 20 * Tp = 0.05 mA 10 0 10-2 107 1 10 102 mA Collector current Common emitter versus base emitter voltage collector characteristics mv BC171 ..., BC237 mA BC 171, 174, 237 10 T 100 Ye =5v | | i/V Vv 045 // 635//o3 | 025 s |. typical f / / } / L a limits | / f I * at Emp= 25C] |} \ lA VA, 02 Ie / 1. 80 y ; y / C | VA ~~ | Hf A | 25C | | 60 LA | 05 5 f ri | T t | | i J va > Lif i. a 01 I 40 a pmeemernny | i Laman 1 I t Lee tooeef i I} | |-50ec 5 ! ( Ig 20.05 mA ) fi 20 | 2 ! | | | ! ! 107 0 10 20 30 40 50 V 33BC171.. ., BC237... Common emitter collector characteristics BC 173, 239 Common emitter input characteristic BC 173, 239 ' qT Vor 25V | LT; =25C | 0 05 WV * Vee Common emitter collector characteristics BC 173, 239 We =0.61V Collector cutoff current versus ambient temperature BC 171...,BC 237... Test voltage Wego: equal to the given maximum value Weg typical maximum 0 400 200 C Tomb 34BC171...,BC237... Collector saturation voltage versus collector current Collector base capacitance, Emitter base capacitance versus reverse bias voltage V BC 171...,BC 237.. pF BC 171...,BC 237... 05 10 q Ic] Ig = 20 i typical --=-= limits 1 at Gmp=25C Veesah4 8 4 CcBo CeBo Cego _ 03 6 J SN CcBo Q2 4 = J Qt 2 Tamb 225C 0 0 . Ol 2 5 1 2 5 10 2 5 100mA 01 02 05 1 2 5 10V * Ic lego ssa Base saturation voltage Gain bandwidth product versus collector current versus collector current V BC 171..,.BC 237... MHz BC 171...,BC 237. 1 T T 103 Io /Ig=20 A) Tomb? 25 C so Le [A em < LO Yor =10V Veesat a a -t HT ae Lo 125C A. | 47 06 ~*~ Le pe 100 La 04 0.2 typical limits at amp 25C 0 [J | Ql 2 5s 1 2 5 10 2 5 100mMA 35BC171...,BC237... Relative h-parameters versus collector current BC 171..., BC 237.. 102 6 hell) he (I= 2mA) 2 10 6 4 107 2 4 1 2 4 10 mA Noise figure versus collector current Relative h-parameters versus collector emitter voltage BC 171...,BC 237. 0 10 20 30 V > ee dB BC 173, 239 20 Ver =5V [ / 18 | #=120Hz2| / 16 Tamb= 25 / / Ro = 1wa/ 100 kQY 10 kQ/1kQ 14 / / / - wn I NE aL \ /| | / LAXNALL V XI V LAL Th Ji NM 0 4a 107 102 10"! 1 10 mA + Ir Noise figure versus collector current dB BC 173, 239 0 103 Rg =1MQ Y 100k2 107 107 kK 10mA 36BC171...,BC237... Noise figure versus collector current Noise figure versus frequency dB BC 173,239 dB BC 173, 239 20 20 Ye =5V Ye =5V 18 | f 210 kHz} 18 Fo =0.2mA Tamb= 25C Rg =2kQ . 1 l r 16 Tamb=25 C 14 14 Rg=1MQ 100 kQ 12 / 12 ol {|} , \so02 y / 10 ka \ 8 j 8 WN | \ / / 6 6 1kQ VV \ 4 YY 4 YN } \ 2 LAN p47 4Z 2 Ce | 0 0 2 4 2 103 10 107! 1 10 mA 10 10 1 10 10 kHz Ir __ f Noise figure versus collector emitter voltage dB BC 173, 239 20 ;-+ Io =0.2mA 18 bRg =2kQ f =1kHz F 16 | 4f=200Hz | Tamp = 25C 14 12 10 8 6 4 2 ot 107, 5 4 2 5 0 2 5 1027 Ne 37