Supertex inc.
www.supertex.com
VN3205
Doc.# DSFP-VN3205
C101612
Features
►Free from secondary breakdown
►Low power drive requirement
►Ease of paralleling
►Low CISS and fast switching speeds
►Excellent thermal stability
►Integral source-drain diode
►High input impedance and high gain
Applications
►Motor controls
►Converters
►Ampliers
►Switches
►Power supply circuits
►Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
N-Channel Enhancement-Mode
Vertical DMOS FETs
GATE
SOURCE
DRAIN
DRAIN
General Description
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities of
bipolar transistors and with the high input impedance and
positive temperature coefcient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
TO-92 (N3)
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
SiVN
3205
YYWW
VN2LW W = Code for week sealed
= “Green” Packaging
TO-243AA (SOT-89) (N8)
Package may or may not include the following marks: Si or
Package may or may not include the following marks: Si or
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSS
Drain-to-gate voltage BVDGS
Gate-to-source voltage ±20V
Operating and storage temperature -55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
Pin Conguration
TO-92 (N3)
GATE
SOURCE
DRAIN
Product Marking
Ordering Information
Part Number Package Option Packing
VN3205N3-G 3-Lead TO-92 1000/Bag
VN3205N3-G P002
3-Lead TO-92 2000/Reel
VN3205N3-G P003
VN3205N3-G P005
VN3205N3-G P013
VN3205N3-G P014
VN3205N8-G 3-Lead TO-243AA (SOT-89) 2000/Reel
VN3205NW Die in wafer form ---
VN3205NJ Die on adhesive tape ---
VN3205ND Die in wafe pack ---
Product Summary
BVDSS/BVDGS
(V)
RDS(ON)
(max) (Ω)
VGS(th)
(max) (V)
50 0.3 2.4
For packaged products, -G indicates package is RoHS compliant (‘Green’).
TO-92 taping specications and winding styles per EIA-468 Standard.
Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specication VF32 for layout and dimensions.
Typical Thermal Resistance
Package θja
3-Lead TO-92 132OC/W
3-Lead TO-243AA (SOT-89) 133OC/W
TO-243AA (SOT-89) (N8)