Ordering number:ENN2063A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1143/2SD1683 50V/4A Switching Applications Applications Package Dimensions * Voltage regulators, relay drivers, lamp drivers, electrical equipment. unit:mm 2042B [2SB1143/2SD1683] Features 8.0 3.3 1.5 7.5 3.0 11.0 4.0 1.0 1.0 1.4 * Adoption of FBET, MBIT processes. * Low saturation voltage. * Large current capacity and wide ASO. 15.5 3.0 1.6 0.8 0.8 0.7 0.75 1 ( ) : 2SB1143 2 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML 3 1.7 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol Conditions Ratings Unit VCBO VCEO (-)60 V (-)50 V VEBO IC (-)6 V (-)4 A ICP (-)6 A 1.5 W 10 150 W C -55 to +150 C Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25C Electrical Characteristics at Ta = 25C Parameter Symbol Ratings Conditions min typ max Unit Collector Cutoff Current ICBO VCB=(-)40V, IE=0 (-)1 A Emitter Cutoff Current IEBO (-)1 A DC Current Gain hFE1 hFE2 VEB=(-)4V, IC=0 VCE=(-)2V, IC=(-)100mA Gain-Bandwidth Product fT 100* VCE=(-)2V, IC=(-)3A VCE=(-)10V, IC=(-)50mA 560* 40 150 * ; The 2SB1143/2SD1683 are classified by 100mA hFE as follows : MHz Continued on next page. Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O2003TN (KOTO)/92098HA (KT)/4137KI/D176TA, TS No.2063-1/4 2SB1143/2SD1683 Continued from preceding page. Parameter Symbol Output Capacitance Ratings Conditions Cob min VCB=(-)10V, f=1MHz Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage pF (-350) (-700) mV 190 500 mV (-)0.94 (-)1.2 IC=(-)2A, IB=(-)100mA ton See specified Test Circuit Storage Time tstg See specified Test Circuit tf See specified Test Circuit V (-)60 V (-)50 V (-)6 Turn-ON Time Fall Time Unit max (39)25 IC=(-)2A, IB=(-)100mA V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO IE=(-)10A, IC=0 Collector-to-Base Breakdown Voltage typ V (70)70 ns (450) ns 650 ns (30)35 ns Switching Time Test Circuit IB1 PW=20s D.C.1% INPUT OUTPUT IB2 VR RB RL 25 50 + 470F + 100F VBE= --5V VCC=25V IC=10IB1= --10IB2=1A (For PNP, the porarity is reversed.) IC -- VCE --5 IC -- VCE 5 2SB1143 2SD1683 A 100m 80mA 60mA mA --4 --50mA --3 --20mA --2 --10mA --5mA --1 0 --0.4 --0.8 --1.2 --1.6 Collector-to-Emitter Voltage, VCE - V mA --14 A 10mA 2 5mA IB=0 0.4 0.8 1.2 1.6 2.0 Collector-to-Emitter Voltage, VCE - V ITR09047 ITR09048 IC -- VCE 2.0 2SD1683 8mA 7mA --8mA --6mA --1.2 20mA 0 --10mA --1.6 3 0 2SB1143 --12m 40mA --2.0 IC -- VCE --2.0 4 1 IB=0 0 Collector Current, IC - A Collector Current, IC - A mA --100 Collector Current, IC - A Collector Current, IC - A 0 --20 --4mA --0.8 --2mA --0.4 1.6 6mA 5mA 1.2 4mA 3mA 0.8 2mA 0.4 1mA IB=0 0 0 --4 --8 --12 --16 Collector-to-Emitter Voltage, VCE - V IB=0 0 --20 ITR09049 0 4 8 12 16 20 Collector-to-Emitter Voltage, VCE - V ITR09050 No.2063-2/4 2SB1143/2SD1683 IC -- VBE --4.8 IC -- VBE 4.8 2SD1683 VCE=2V 2SB1143 VCE= --2V --3.2 --2.4 --1.6 --0.8 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE - V --1.4 0.2 0.4 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage, VBE - V 2SD1683 VCE=2V 7 5 1.4 ITR09052 hFE -- IC 1000 2SB1143 VCE= --2V 7 0 ITR09051 hFE -- IC 1000 5 Ta=75C 25C --25C 3 2 DC Current Gain, hFE DC Current Gain, hFE 1.6 0 0 100 7 5 3 25C Ta=75C 2 --25C 100 7 5 3 3 2 2 10 10 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC - A 3 5 7 0.01 Output Capacitance, Cob -- pF 5 3 2SD 168 2 3 2SB 1143 100 7 5 3 2 10 0.01 For PNP, minus sign is omitted. 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC - A 3 5 2 3 5 7 1.0 2 3 5 ITR09054 3 2 100 7 2SB1 143 2SD 168 3 5 3 2 For PNP, minus sign is omitted. 2 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V 7 100 ITR09056 VCE(sat) -- IC 2SD1642 IC / IB=20 3 Collector-to-Emitter Saturation Voltage, VCE (sat) - mV 3 2 2SB1143 / 2SD1683 f=1MHz 5 2SB1143 IC / IB=20 7 0.1 Collector Current, IC - A Cob -- VCB 10 1.0 5 7 10 ITR09055 VCE(sat) -- IC 5 3 5 2SB1143 / 2SD1683 VCE=10V 7 2 ITR09053 f T -- IC 1000 Gain-Bandwidth Product, fT - MHz 2.4 0.8 0 Collector-to-Emitter Saturation Voltage, VCE (sat) - mV 3.2 Ta= 75 25 C C --25 C Collector Current, IC - A 4.0 Ta= 75 25 C --25 C C Collector Current, IC - A --4.0 2 1000 --1000 7 5 3 2 --100 25C 7 5 C = --25 Ta 3 75C 2 --10 7 5 3 2 100 7 5 3 25C Ta=75C --25C 2 10 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC - A 2 3 5 ITR09057 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC - A 2 3 5 ITR09058 No.2063-3/4 2SB1143/2SD1683 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE (sat) - V 5 3 2 --1.0 25C Ta= --25C 7 75C 5 3 2 7 --0.01 3 5 7 --0.1 2 3 5 7 --1.0 3 era tio nT op s DC c= era tio nT a= 3 25 2 25 C C Ta=25C Single pulse (For PNP, minus sign is omitted.) 3 5 7 75C 5 3 2 7 1.0 2 3 5 7 10 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC - A 2 3 5 ITR09060 PC -- Ta 12 0m op 2 3 2 25C Ta= --25C 1.0 7 0.01 10 DC IC=4A 0.1 7 5 2 ITR09059 2SB1143 / 2SD1683 1m ms s ICP=6A 1.0 7 5 3 5 10 Collector Current, IC - A 2 ASO 10 3 5 0.1 2 Collector Current, IC - A 7 5 2SD1683 IC / IB=20 7 Collector Dissipation, PC - W Base-to-Emitter Saturation Voltage, VBE (sat) - V 7 VBE(sat) -- IC 10 2SB1143 IC / IB=20 2SB1143 / 2SD1683 10 8 6 4 2 1.5 No heat si nk 0 2 3 Collector-to-Emitter Voltage, VCE - V 5 7 100 ITR09061 0 20 40 60 80 100 120 Ambient Temperature, Ta - C 140 160 ITR09062 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2003. Specifications and information herein are subject to change without notice. PS No.2063-4/4