2SD1683-R - ON Semiconductor L.L.C.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

PNP/NPN Epitaxial Planar Silicon Transistors

50V/4A Switching Applications

Ordering number:ENN2063A

2SB1143/2SD1683

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

O2003TN (KOTO)/92098HA (KT)/4137KI/D176TA, TS No.2063–1/4

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

OBC 06)–(V

egatloVrettimE-ot-rotcelloCV

OEC 05)–(V

egatloVesaB-ot-rettimEV

OBE 6)–(V

tnerruCrotcelloCI

C4)–(A

)esluP(tnerruCrotcelloCI

PC 6)–(A

noitapissiDrotcelloCP

C5.1W

01W

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

( ) : 2SB1143

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2042B

[2SB1143/2SD1683]

Applications

· Voltage regulators, relay drivers, lamp drivers,

electrical equipment.

Features

· Adoption of FBET, MBIT processes.

· Low saturation voltage.

· Large current capacity and wide ASO.

˚C

Electrical Characteristics at Ta = 25˚C

1 : Emitter

2 : Collector

3 : Base

SANYO : TO-126ML

Tc=25˚C

retemaraPlobmySsnoitidnoC sgnitaR tinU

nimpytxam

tnerruCffotuCrotcelloCI

OBC VBC I,V04)–(= E0=1)–(Aµ

tnerruCffotuCrettimEI

OBE VBE I,V4)–(= C0=1)–(Aµ

niaGtnerruCCD hEF 1V

EC I,V2)–(= CAm001)–(=*001*065

hEF 2V

EC I,V2)–(= CA3)–(=04

tcudorPhtdiwdnaB-niaGf

TVEC I,V01)–(= CAm05)–(=051zHM

* ; The 2SB1143/2SD1683 are classified by 100mA hFE as follows : Continued on next page.

knaRRSTU

hEF 002ot001082ot041004ot002065ot082

4.0

1.0

8.0

1.6

0.8

0.75

1.5

7.5

3.0 1.4

11.0

15.5

3.3

3.0

0.7

2.4 4.8

1.7

123

2SB1143/2SD1683

No.2063–2/4

Switching Time Test Circuit

retemaraPlobmySsnoitidnoC sgnitaR tinU

nimpytxam

ecnaticapaCtuptuOC

bo VBC zHM1=f,V01)–(=52)93(Fp

egatloVnoitarutaSrettimE-ot-rotcelloCV

)tas(EC ICI,A2)–(= BAm001)–(= )053–()007–(Vm

091005Vm

egatloVnoitarutaSrettimE-ot-esaBV

)tas(EB ICI,A2)–(= BAm001)–(=49.0)–(2.1)–(V

egatloVnwodkaerBesaB-ot-rotcelloCV

OBC)RB( ICI,Aµ01)–(= E0=06)–(V

egatloVnwodkaerBrettimE-ot-rotcelloCV

OEC)RB( ICR,Am1)–(= EB =∞05)–(V

egatloVnwodkaerBesaB-ot-rettimEV

OBE)RB( IEI,Aµ01)–(= C0=6)–(V

emiTNO-nruTt

no tiucriCtseTdeificepseeS07)07(sn

emiTegarotSt

gts tiucriCtseTdeificepseeS )054(sn

056sn

emiTllaFt

ftiucriCtseTdeificepseeS53)03(sn

Continued from preceding page.

IC=10IB1= --10IB2=1A

(For PNP, the porarity is reversed.)

VRRB

VCC=25VVBE= --5V

50Ω

INPUT

OUTPUT

25Ω

100µF 470µF

PW=20µsIB1

D.C.≤1% IB2

--5

--3

--2

--1

--4

00 --0.4 --0.8 --2.0--1.6--1.2

IC -- VCE

IB=0

ITR09047

2SB1143

--5mA

--10mA

--20mA

--50mA

--100mA

--200mA

--2.0

--1.2

--0.8

--0.4

--1.6

00 --4 --8 --20--16--12

IC -- VCE

IB=0

ITR09049

2SB1143

--2mA

--4mA

--6mA

--8mA

--14mA

--12mA

--10mA

00 0.4 0.8 2.01.61.2

IC -- VCE

IB=0

ITR09048

2SD1683

5mA

10mA

20mA

80mA

60mA

40mA

100mA

2.0

1.2

0.8

0.4

1.6

0048 201612

IC -- VCE

IB=0

ITR09050

2SD1683

2mA

1mA

3mA

4mA

6mA

5mA

8mA

7mA

Collector Current, IC–A

Collector-to-Emitter Voltage, VCE –V

Collector Current, IC–A

Collector-to-Emitter Voltage, VCE –V

Collector Current, IC–A

Collector-to-Emitter Voltage, VCE –V

Collector Current, IC–A

Collector-to-Emitter Voltage, VCE –V

2SB1143/2SD1683

No.2063–3/4

0 --0.2 --0.4 --0.6 --0.8 --1.4--1.2--1.0

--4.8

--4.0

--3.2

--2.4

--1.6

--0.8

IC -- VBE

ITR09051

Ta=75°C

25°C

--25°C

2SB1143

VCE= --2V

0 0.2 0.4 0.6 0.8 1.41.21.0

4.8

4.0

3.2

2.4

1.6

0.8

IC -- VBE

ITR09052

Ta=75°C

25°C

--25°C

2SD1683

VCE=2V

23 5

0.1 10

23 5

0.01 23 57 7 7

1.0

fT -- IC

100

1000

ITR09055

2SB1143

2SD1683

Cob -- VCB

1.0 10

100

2735 100

2735

ITR09056

hFE -- IC

1000

100

10 23 5

--0.01 23 5 5

--0.1 23777 --1.0 ITR09053

2SB1143

VCE= --2V

Ta=75°C

25°C

--25°C

hFE -- IC

1000

100

10 23 5

0.01 23 5 5

0.1 23777 1.0 ITR09054

Ta=75°C

25°C

--25°C

2SD1683

VCE=2V

--1000

--10

--100

23 5777

--0.01 23 5 3 5

--0.1 2

--1.0 ITR09057

VCE(sat) -- IC

2SB1143

IC / IB=20

75°C

25°C

Ta= --25°C

1000

100

23 5777

0.01 23 5 3 5

0.1 2

1.0 ITR09058

VCE(sat) -- IC

25°C

Ta=

75°C

--25°C

2SD1642

IC / IB=20

2SB1143 / 2SD1683

VCE=10V

2SB1143

2SD1683

2SB1143 / 2SD1683

f=1MHz

Collector Current, IC–A

Base-to-Emitter Voltage, VBE –V

Collector Current, IC–A

Base-to-Emitter Voltage, VBE –V

DC Current Gain, hFE

Collector Current, IC–A

DC Current Gain, hFE

Collector Current, IC–A

For PNP, minus sign is omitted. For PNP, minus sign is omitted.

Gain-Bandwidth Product, fT– MHz

Collector Current, IC–A

Output Capacitance, Cob -- pF

Collector-to-Base Voltage, VCB -- V

Collector-to-Emitter

Saturation Voltage, VCE(sat) – mV

Collector Current, IC–A

Collector-to-Emitter

Saturation Voltage, VCE(sat) – mV

Collector Current, IC–A

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of October, 2003. Specifications and information herein are subject

to change without notice.

2SB1143/2SD1683

PS No.2063–4/4

A S O

1.0

0.1

21.0 10

25733 100

257357

ITR09061

1.5

0 20 40 60 100 120 16014080

PC -- Ta

ITR09062

No heat sink

2SB1143 / 2SD1683

--1.0

--10

23 5777

--0.01 23 5 23 5

--0.1 --1.0 ITR09059

VBE(sat) -- IC

2SB1143

IC / IB=20

25°C

75°C

Ta=

--25°C

1.0

0.1

23 5777

0.01 23 5 23 5

0.1 1.0 ITR09060

VBE(sat) -- IC

25°C

75°C

Ta=

--25°C

2SD1683

IC / IB=20

100ms

10ms

1ms

DC operation Tc=25°C

DC operation Ta=25°C

2SB1143 / 2SD1683

IC=4A

ICP=6A

Ta=25°C

Single pulse

(For PNP, minus sign is omitted.)

Base-to-Emitter

Saturation Voltage, VBE(sat) – V

Collector Current, IC–A

Base-to-Emitter

Saturation Voltage, VBE(sat) – V

Collector Current, IC–A

Collector-to-Emitter Voltage, VCE –V

Collector Current, IC–A

Collector Dissipation, PC–W

Ambient Temperature, Ta – ˚C