MITSUBISHI Nch POWER MOSFET FS10VS-12 HIGH-SPEED SWITCHING USE pie RO RR Se _FS10VS-12 OUTLINE DRAWING Dimensions in mm a 10.5MAX. . 45 \ fae ae ad 2 po \ z bmi fe ld a | a 33 #185 3 a/3/8 [=e TT aro He Sl oe 08 ny ; ot +} 4 roe 2 oe + O B N 1d GATE 4 (54) 2: DRAIN On. 7 SOURCE ~ 4: DRAIN @VOSS ccc e ccc n ete e nee eee nee ene naan eee tane 6G0V x 4 @ FDS (ON) (MAX) verter eter etter reece teen eens 0.940 OF WD creer terete e renee ea eeettaans 10A T0-220S APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS (ie = 28C) Parameter Conditions Voss Drain-source Ves =0V 600 Vass Gate-source Vos = OV +30 Ip Drain current 10 lpm Drain current 30 Po Maximum 150 Teh Channe! ~55 ~ +150 T 55 ~ +150 1.2 . MITSUBISHI a 988 ae ELECTRICELECTRICAL CHARACTERISTICS (Tech = 25C) MITSUBISHI Nch POWER MOSFET FS10VS-12 HIGH-SPEED SWITCHING USE Limit: Symbol Parameter Test conditions - a Unit Min. Typ. Max V4BR) OSS | Drain-source breakdown voltage | lO = 1mA, VGS = OV 600 _ _ Vv V (BA) GSS | Gate-source breakdown voltage | IG = +100LA, Vos = OV +30 ~ Vv Iass Gate leakage current VGs = +25V, VDS = 0V _ _ t10 HA loss Drain current Vos = 600V, Vas = OV - j- 1 mA VGS (th) Gate-source threshold voltage lo = mA, VDS = 10V 2 : 3 4 Vv FDS (ON) Drain-source on-state resistance | 10 = 54, VGS = 10V _ 0.72 0.94 Q Vos (ON) | Drain-source on-state voltage | ID = 5A, VGS = 10V 3.6 4.7 | yts | Forward transfer admittance | !p = 5A, Vos = 10V 45 7.0 s Ciss input capacitance = 1800 = pF Coss Output capacitance Vos = 25V, Ves = OV, f= {MHz 170 pF Criss Reverse transfer capacitance ~ 2s _ pF td (on) Turn-on delay time _ 25 ns t Rise time Vob = 200V, ip = SA, VGS = 10V, RGEN = AGS = 500 = 38 = ns te foff) Turn-off delay time _ 130 _ ns tt Fall time _ 45 _ ns s80 Source-drain voltage Is = 5A, VGS = OV _ 1.5 2.0 Vv Rth (ch-c) | Thermal resistance Channel to case _ _ 0.83 CAV PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 200 5 a 3 = 2 tw=1 o 160 =< 1 a 8 10) 100us Zz 5 2 420 5 3 G i 2 ims a 400 a 80 3 a Zz 5 < w 3 = 40 & 2b tc=25C Oo Puise a 107 7 0 5 . 7 0 50 100 160 200 23 5710' 23 57102 23 57105 2 CASE TEMPERATURE Te (C) DRAIN-SOURCE VOLTAGE Vos (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) Vas = 20V VGs=20V 20 10 10 OV 8V av 6V < 16 =< 8 a 2 5 4.2 5 6 wu Te = 25C uw a Pulse T: a 8 3 4 Zz z < < fea 5 4 a 2 Te = 26C Pulse Test 0 0 0 10 20 30 40 50 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SOURCE VOLTAGE Vos (V) MITSUBISHI 2 - 359 , ELECTRICMITSUBISHI Nch POWER MOSFET FS10VS-12 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS. GATE-SOURCE VOLTAGE DRAIN CURRENT (TYPICAL) (TYPICAL) 2.0 a To = 26C To = 25C w ; Pulse Test wu Pulse Test < S t < gS 1.6 Oe as VGS = 10V 5$ 53 a a 12 20V w 2 w > QO? Ow Sw zo 5 g 5 $ 0.8 OP pe Or Za ze z i 0.4 a am : 0 0 4 8 12 16 20 10 23 57108 23 5710! 23 57102 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT to (A) FORWARD TRANSFER ADMITTANCE TRANSFER CHARACTERISTICS VS.DRAIN CURRENT (TYPICAL) (TYPICAL) 10" To = 25C 7b Vos = 10V Te = 25C Vbs=50V 5 Pulse Test z Pulse Test xg oO Wd 3 = ue Ca 7 25 2 z << i Cw x FO 100 x oz 3 ee? z Se 8 = re < oO x ria 4 3 2 10-1 % 4 8 12 16 20 OTs 23 65710 23 57101 GATE-SOURCE VOLTAGE Ves (V) DRAIN CURRENT Ip (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) 108 ; Toh = 25C Vbb = 200V _ 8 VGs = 10V =~ 2 = RGS = i. = 3 WW < Wu 2 =e = = ey 102 OB Zz <6 = 7 ao I <= Oo 5 O8 = ~ nh = 25C a > f= 1MHz Crss 2 ra 19) = 40! 23 5710023 5710'23 5710223 Oo? 2 3 56 7700 2232 57101 DRAIN-SOURCE VOLTAGE Vps (V) DRAIN CURRENT Ip (A) : MITSUBISHI 2 = 380 ate ELECTRICDRAIN-SOURCE ON-STATE RESISTANCE ros (on) (1C) DRAIN-SOURCE ON-STATE RESISTANCE rps (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSs) (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE Ver (pss) (25C) GATE-SOURCE VOLTAGE Vas (V) Nm oO _ n NS 10 mw as 10-1 0.4 0 20 40 60 80 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) Toh = 25C Ip = 104 100 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 10V ID = Telo Pulse Test ~50 ) 50 700 150 CHANNEL TEMPERATURE = Tch (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = OV ID= TPA -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE 2th ich--c} (C/W) SOURCE CURRENT Is (A) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 2 MITSUBISHI Nch POWER MOSFET FS10VS-12 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 VGs = OV Pulse Test 32 24 9 0.8 16 2.4 3.2 40 SOURCE-DRAIN VOLTAGE Vso (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VbS = 10V ID= 1mMA 4.0 3.0 2.0 -50 0 50 10C 150 CHANNEL TEMPERATURE Tech (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 0.01 Pulse oO 10423 5710-323 710223 571023 5710023 5710! 23 57102 PULSE WIDTH tw (s) MITSUBISHI ELECTRIC 2 - 361