2011-10-051
BSP50-BSP52
1
2
3
4
NPN Silicon Darlington Transistors
• High collector current
• Low collector-emitter saturation voltage
• Complementary types: BSP60 - BSP62 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BSP50
BSP51
BSP52
BSP50
BSP51
BSP52
1=B
1=B
1=B
2=C
2=C
2=C
3=E
3=E
3=E
4=C
4=C
4=C
-
-
-
-
-
-
SOT223
SOT223
SOT223
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BSP50
BSP51
BSP52
VCEO
45
60
80
V
Collector-base voltage
BSP50
BSP51
BSP52
VCBO
60
80
90
Emitter-base voltage VEBO 5
Collector current IC1 A
Peak collector current, tp ≤ 10 ms ICM 2
Base current IB100 mA
Total power dissipation-
TS ≤ 124 °C
Ptot 1.5 W
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
2011-10-052
BSP50-BSP52
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 17 K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BSP50
IC = 10 mA, IB = 0 , BSP51
IC = 10 mA, IB = 0 , BSP52
V(BR)CEO
45
60
80
-
-
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BSP50
IC = 100 µA, IE = 0 , BSP51
IC = 100 µA, IE = 0 , BSP52
V(BR)CBO
60
80
90
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
V(BR)EBO 5 - -
Collector-emitter cutoff current
VCE = VCE0ma
x
, VBE = 0
ICES - - 10 µA
Emitter-base cutoff current
VEB = 4 V, IC = 0
IEBO - - 10 µA
DC current gain2)
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
hFE
1000
2000
-
-
-
-
-
Collector-emitter saturation voltage2)
IC = 500 mA, IB = 0.5 mA
IC = 1 A, IB = 1 mA
VCEsat
-
-
-
-
1.3
1.8
V
Base emitter saturation voltage2)
IC = 500 mA, IB = 0.5 mA
IC = 1 mA, IB = 1 A
VBEsat
-
-
-
-
1.9
2.2
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Pulse test: t < 300µs; D < 2%
2011-10-053
BSP50-BSP52
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz
fT- 200 - MHz
Tum-on time
IC = 500 mA, IB1 = IB2 = 0.5 mA
t(on) - 400 - ns
Tum-off time
IC = 500 mA, IB1 = IB2 = 0.5 mA
t(off) - 1500 -
2011-10-054
BSP50-BSP52
Switching time test circuit
Switching time waveform
2011-10-055
BSP50-BSP52
DC current gain hFE = ƒ(IC)
VCE = 10 V
EHP00661BSP 50...52
10
10 mA
5
FE
5
102
5
103
5
104
110 210 310 4
Ι
C
h
Collector-emitter saturation voltage
IC = ƒ(VCEsat), IB = Parameter
EHP00663BSP 50...52
10
1
5
Ι
2
10
5
C
10
3
mA
V
CE sat
V
012
B
Ι
= 0.5 mA
4 mA
Base-emitter saturation voltage
IC = ƒ(VBEsat), IB = Parameter
EHP00664BSP 50...52
101
5
Ι
102
C5
10
mA
3
1
0
BE sat
V
2V3
= 0.5 mA
B
Ι
4 mA
Transition frequency fT = ƒ(IC)
VCE = 5 V, f = 100 MHz
EHP00662BSP 50...52
10
10 mA
f
C
10
MHz
10
T
5
Ι
12 3
10
3
2
10
1
5
2011-10-056
BSP50-BSP52
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB
0
2
4
6
8
10
12
14
16
18
20
22
24
pF
28
CCB(CEB)
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
150
300
450
600
750
900
1050
1200
1350
mW
1650
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00943BSP 50...52
-6
0
10
5
D
=
5
101
102
3
10
10-5 10-4 10-3 10-2 100
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10-1
s
5
totmax
tot
PDC
P
p
t
t
p
=
DT
t
p
T
External resistance RBE = ƒ (TA)**
VCB = VCEmax
** RBEmax for thermal stability
EHP00660BSP 50...52
10
050 ˚C
R
A
150
5
100
BE
10
7
6
10
5
5
T
Ω
2011-10-057
BSP50-BSP52
Package SOT223
Package Outline
Foot Print
Marking Layout (Example)
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
123
3
4
±0.1
±0.04
0.5 MIN.
0.28
0.1 MAX.
15˚ MAX.
6.5±0.2
A
4.6
2.3
0.7 ±0.1
0.25 MA
1.6±0.1
7
±0.3
B0.25 M
±0.2
3.5
B
3.5
1.4 4.8 1.4
1.11.2
80.3 MAX.
6.8
7.55
12
1.75
Pin 1
Manufacturer
0...10˚
2011-10-058
BSP50-BSP52
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
