1N4531 / 1N4148 / 1N4150 / 1N4448
Diodes
Switching diode
1N4531 / 1N4148 / 1N4150 / 1N4448
∗This product is available only outside of Japan.
z
zz
zApplication
High-speed switching
z
zz
zFeatures
1) Glass sealed envelope. (MSD, GSD)
2) High speed.
3) High reliability.
z
zz
zConstruction
Silicon epitaxial planar
z
zz
zExternal dimensions (Units : mm )
φ 0.5
±
0.1
C
29
±1
29
±1
CATHODE BAND (BLACK)
3.8
±
0.2
A
φ 1.8
±
0.2
Type No.
ROHM : GSD
EIAJ : −
JEDEC : DO-35
φ 0.5
±
0.1
C
29
±1
29
±1
CATHODE BAND (BLACK)
2.7
±
0.3
A
φ 1.8
±
0.2
Type No.
ROHM : MSD
EIAJ : −
JEDEC : DO-34
1N4531
1N4148 / 1N4150 / 1N4448
z
zz
zAbsolute maximum ratings (Ta = 25°C)
Type
1N4148 100 −65
~
+200−65
~
+200
(V)
V
RM
75
(V)
V
R
450
(mA)
I
FM
150
(mA)
I
O
200
(mA)
I
F
2
(A)
1µs
I
FSM
500
(mW)
P
200
1N4531 100 −65
~
+200−65
~
+200
75 450 150 200 2 500 200
1N4150 50 −65
~
+200−65
~
+200
50 600 200 250 4 500 200
1N4448 100 −65
~
+200−65
~
+200
75 450 150 200 2 500 200
(
°C
)
Tj (
°C
)
Topr (
°C
)
Tstg
z
zz
zElectrical characteristics (Ta = 25°C)
Type
0.1mA
1.0
0.66
0.62 0.74
0.76
0.86
0.82
0.92
1.0
0.87
1.0
0.54
0.62
0.72
@
0.25mA
@
1mA
@
2mA
@
5mA
@
10mA
@
20mA
@
30mA
@
50mA
@
100mA
@
200mA
@
250mA
@5µA
75 100 50.0 20 4 4
0.025
5.0
20
75
−50 0.1 50 100.0 50 2.5 4
−100 50.0 20 4 4
@100µA
@@150
°C
V
R
(V)
@25
°C
V
R
(V)
t
rr
(ns)C
r
(pF)I
R
(µA) Max.BV (V) Min.V
F
(V)
I
F
=10mA
f=1MHz
V
R
=0R
L
=100Ω
V
R
=6V
1N4148
1.0 75 100 50.0 20 4 4
0.025
5.0
20
75
1N4531
1N4150
1N4448 0.025
5.0 20
75
The upper figure is the minimum V
F
and the lower figure is the maximum V
F
value.
1N4531 / 1N4148 / 1N4150 / 1N4448
Diodes
z
zz
zElectrical characteristic curves (Ta = 25°C)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.2
0.5
1
2
5
10
20
50
100
FORWARD CURRENT : I
F
(mA)
FORWARD VOLTAGE : V
F
(V)
Fig. 1 Forward characteristics
Ta=125
°C
Ta=75
°C
Ta=25
°C
Ta=−25
°C
0 20 40 60 80 100 120
3
10
30
100
300
1000
3000
REVERSE VOLTAGE : V
R (
V)
REVERSE CURRENT : I
R (
nA)
Fig. 2 Reverse characteristics
70°C
50°C
100°C
Ta=25°C
0
010 20 30
0.5
1.0
1.5
2.0
2.5
3.0
51525
f=1MHz
REVERSE VOLTAGE : VR (V)
CAPACITANCE BETWEEN TERMINALS : C
T
(
pF)
Fig. 3 Capacitance between
terminals characteristics
Fig. 4 Reverse recovery time
characteristics
0
010 20 30
1
2
3
V
R
=
6V
Irr
=
1/10I
R
REVERSE RECOVERY TIME : trr
(
ns)
FORWARD CURRENT : I
F
(
mA)
0.1 1 10 100 1000 10000
1
2
5
10
20
50
100
PULSE
Single pulse
PULSE WIDTH : Tw (ms)
SURGE CURRENT : Isurge (A)
Fig. 5 Surge current characteristics
PULSE GENERATOR
OUTPUT 50ΩSAMPLING
OSCILLOSCOPE
50Ω
0.01µF
100ns
INPUT
D.U.T.
IR
0.1IR
trr
OUTPUT
0
5Ω
Fig. 6 Reverse recovery time (t
rr
) measurement circuit
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
