H11AV1V-M - Fairchild Semiconductor Corporation

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2

September 2009

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM

Phototransistor Optocouplers

Features

■

H11AV1M and H11AV2M feature 0.3" input-output

lead spacing

■

H11AV1AM and H11AV2AM feature 0.4" input-output

lead spacing

■

UL recognized (File #E90700, Vol. 2)

■

VDE recognized (File #102497)

■

Add option V (e.g., H11AV1AVM)

Applications

■

Power supply regulators

■

Digital logic inputs

■

Microprocessor inputs

Description

The general purpose optocouplers consist of a gallium

arsenide infrared emitting diode driving a silicon

phototransistor in a 6-pin dual in-line white package.

Schematic Package Outlines

H11AV1SM, H11AV2SM

H11AV1M, H11AV2M

H11AV1AM, H11AV2AM

EMITTER

N/C

ANODE

CATHODE

6BASE

COLLECTOR

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 2

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers

Absolute Maximum Ratings

= 25°C unless otherwise specified.)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Symbol Parameter Value Units

TOTAL DEVICE

STG

Storage Temperature -40 to +150 °C

OPR

Operating Temperature -40 to +100 °C

SOL

Wave Solder Temperature (see page 8 for reﬂow solder proﬁles) 260 for 10 sec °C

Total Device Power Dissipation @ T

= 25°C

Derate above 25°C

250 mW

2.94 mW/°C

EMITTER

DC / Average Forward Input Current 60 mA

Reverse Input Voltage 6 V

LED Power Dissipation @ T

= 25°C

Derate above 25°C

120 mW

1.41 mW/°C

DETECTOR

CEO

Collector-Emitter Voltage 70 V

CBO

Collector-Base Voltage 70 V

ECO

Emitter-Collector Voltage 7 V

Detector Power Dissipation @ T

= 25°C

Derate above 25°C

150 mW

1.76 mW/°C

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 3

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers

Electrical Characteristics

= 25°C unless otherwise speciﬁed.)

Individual Component Characteristics

Transfer Characteristics

Isolation Characteristics

*Typical values at T

= 25°C

Symbol Parameter Test Conditions Min. Typ.* Max. Unit

EMITTER

Input Forward Voltage (I

= 10mA) T

= 25°C 0.8 1.18 1.5 V

= -55°C 0.9 1.28 1.7

= 100°C 0.7 1.05 1.4

Reverse Leakage Current V

= 6.0V 10 µA

DETECTOR

CEO

Collector-Emitter Breakdown Voltage I

= 1.0mA, I

= 0 70 100 V

CBO

Collector-Base Breakdown Voltage I

= 100µA, I

= 0 70 120 V

ECO

Emitter-Collector Breakdown Voltage I

= 100µA, I

= 0 7 10 V

CEO

Collector-Emitter Dark Current V

= 10V, I

= 0 1 50 nA

CBO

Collector-Base Dark Current V

= 10V 0.5 nA

Capacitance V

= 0V, f = 1MHz 8 pF

Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit

DC CHARACTERISTIC

CTR Current Transfer Ratio,

Collector to Emitter

= 10mA, V

= 10V H11AV1M

H11AV1AM

100 300 %

H11AV2M

H11AV2AM

CE (SAT)

Collector-Emitter

Saturation Voltage

= 2mA, I

= 20mA All 0.4 V

AC CHARACTERISTIC

Non-Saturated Turn-on

Time

= 2mA, V

= 10V,

= 100

Ω

(Fig. 11)

All 15 µs

Non Saturated Turn-off

Time

= 2mA, V

= 10V,

= 100

Ω

(Fig. 11)

All 15 µs

Symbol Parameters Test Conditions Min. Typ.* Max. Units

ISO

Input-Output Isolation Voltage f = 60Hz, t = 1 sec. 7500 V

AC(pk)

ISO

Isolation Capacitance V

I-O

= 0V, f = 1MHz 0.2 2 pF

ISO

Isolation Resistance V

I-O

= 500 VDC 10

Ω

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 4

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers

Safety and Insulation Ratings

As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.

Compliance with the safety ratings shall be ensured by means of protective circuits.

Symbol Parameter Min. Typ. Max. Unit

Installation Classiﬁcations per DIN VDE 0110/1.89

Table 1

For Rated Main Voltage < 150Vrms I-IV

For Rated Main voltage < 300Vrms I-IV

Climatic Classiﬁcation 55/100/21

Pollution Degree (DIN VDE 0110/1.89) 2

CTI Comparative Tracking Index 175

Input to Output Test Voltage, Method b,

IORM

x 1.875 = V

, 100% Production Test

with tm = 1 sec, Partial Discharge < 5pC

1594 V

peak

Input to Output Test Voltage, Method a,

IORM

x 1.5 = V

, Type and Sample Test

with tm = 60 sec, Partial Discharge < 5pC

1275 V

peak

IORM

Max. Working Insulation Voltage 850 V

peak

IOTM

Highest Allowable Over Voltage 6000 V

peak

External Creepage 7 mm

External Clearance 7 mm

Insulation Thickness 0.5 mm

RIO Insulation Resistance at Ts, V

= 500V 10

Ω

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 5

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers

Typical Performance Curves

Fig. 2 Normalized CTR vs. Forward Current

IF – FORWARD CURRENT (mA)

02468101214161820

NORMALIZED CTR

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VCE = 5.0V

TA = 25°CNormalized to

IF = 10mA

Fig. 3 Normalized CTR vs. Ambient Temperature

TA – AMBIENT TEMPERATURE (°C)

-60 -40 -20 0 20 40 60 80 100

NORMALIZED CTR

0.2

0.4

0.6

0.8

1.0

1.2

1.4

IF = 5mA

IF = 10mA

IF = 20mA

Normalized to

IF = 10mA

TA = 25°C

IF – LED FORWARD CURRENT (mA)

VF – FORWARD VOLTAGE (V)

Fig. 1 LED Forward Voltage vs. Forward Current

110100

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

TA = 25°C

TA = -55°C

TA = 100°C

Fig. 5 CTR vs. RBE (Saturated)

RBE- BASE RESISTANCE (kΩ)

NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))

10 100 1000

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

IF = 20mA

IF = 10mA

IF = 5mA

VCE = 0.3 V

Fig. 4 CTR vs. RBE (Unsaturated)

RBE – BASE RESISTANCE (kΩ)

NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))

10 100 1000

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

VCE = 5.0V

IF = 20mA

IF = 10mA

IF = 5mA

0.01 0.1 1 10

0.001

0.01

0.1

100

IF = 5mA

IF = 20mA

IF = 10mA

Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current

IC - COLLECTOR CURRENT (mA)

VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V)

IF = 2.5mA

TA = 25

˚C

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 6

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers

Typical Performance Curves

(Continued)

NORMALIZED ton - (ton(R

) / ton(open))

Fig. 8 Normalized ton vs. RBE

RBE – BASE RESISTANCE (k Ω)

10 100 1000 10000 100000

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

VCC = 10V

IC = 2mA

RL = 100Ω

SWITCHING SPEED - (µs)

Fig. 7 Switching Speed vs. Load Resistor

R – LOAD RESISTOR (kΩ)

0.1 1 10 100

0.1

100

1000

Toff

IF = 10 mA

VCC = 10 V

TA = 25°C

Ton

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

VCC = 10V

IC = 2mA

RL = 100Ω

NORMALIZED toff - (toff(R

) / toff(open))

10 100 1000 10000 100000

RBE – BASE RESISTANCE (k Ω)

Fig. 9 Normalized toff vs. RBE

Fig. 10 Dark Current vs. Ambient Temperature

TA – AMBIENT TEMPERATURE

(°C)

020406080100

CEO

- COLLECTOR -EMITTER DARK CURRENT (nA)

0.001

0.01

0.1

100

1000

10000

VCE = 10 V

TA = 25°

OUTPUT PULSE

INPUT PULSE

TEST CIRCUIT WAVE FORMS

trtf

INPUT

IF RL

RBE

VCC = 10V

OUTPUT

ton

10%

90%

toff

Figure 11. Switching Time Test Circuit and Waveforms

Adjust IF to produce IC = 2 mA

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 7

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers

Package Dimensions

8.13–8.89

6.10–6.60

Pin 1

0.25–0.36

5.08 (Max.)

3.28–3.53

0.38 (Min.) 2.54–3.81

2.54 (Bsc)

(0.86)

0.41–0.51

1.02–1.78

0.76–1.14

8.13–8.89

6.10–6.60

Pin 1

0.25–0.36

5.08 (Max.)

3.28–3.53

0.38 (Min.) 2.54–3.81

2.54 (Bsc)

(0.86)

0.41–0.51

1.02–1.78

0.76–1.14

7.62 (Typ.)

15° (Typ.)

0.20–0.30

10.16–10.80

Through Hole 0.4" Lead Spacing

Surface Mount

Rcommended Pad Layout

(1.78)

(2.54)

(1.52)

(7.49)

(10.54)

(0.76)

8.13–8.89

Note:

All dimensions in mm.

6.10–6.60

8.43–9.90

Pin 1

0.25–0.36

2.54 (Bsc)

(0.86)

0.41–0.51

1.02–1.78

0.76–1.14

0.38 (Min.)

3.28–3.53

5.08

(Max.) 0.20–0.30

0.16–0.88

(8.13)

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 8

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers

Ordering Information

Marking Information

Option

Order Entry Identiﬁer

(Example) Description

No option H11AV1M Standard Through Hole Device

S H11AV1SM Surface Mount Lead Bend

SR2 H11AV1SR2M Surface Mount; Tape and Reel

T H11AV1TM 0.4" Lead Spacing

V H11AV1VM VDE 0884

TV H11AV1TVM VDE 0884, 0.4" Lead Spacing

SV H11AV1SVM VDE 0884, Surface Mount

SR2V H11AV1SR2VM VDE 0884, Surface Mount, Tape and Reel

H11AV1

43 5

*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are

marked with date code ‘325’ or earlier are marked in portrait format.

Deﬁnitions

1Fairchild logo

2Device number

3VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table)

4 One digit year code, e.g., ‘3’

5Two digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

V X YY

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 9

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers

Tape Dimensions

Note:

All dimensions are in millimeters.

Reflow Soldering Profile

4.0 ± 0.1

Ø1.5 MIN

User Direction of Feed

2.0 ± 0.05

1.75 ± 0.10

11.5 ± 1.0

24.0 ± 0.3

12.0 ± 0.1

0.30 ± 0.05

21.0 ± 0.1

4.5 ± 0.20

0.1 MAX 10.1 ± 0.20

9.1 ± 0.20

Ø1.5 ± 0.1/-0

300

280

260

240

220

200

180

160

140

120

100

°C

Time (s)

0 60 180120 270

260°C

>245°C = 42 Sec

Time above

183°C = 90 Sec

360

1.822°C/Sec Ramp up rate

33 Sec

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 10

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries,andis not

intended to be an exhaustive list of all such trademarks.

Auto-SPM™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK®

EfficentMax™

EZSWITCH™*

™*

Fairchild®

Fairchild Semiconductor®

FACT Quiet Series™

FACT®

FAST®

FastvCore™

FETBench™

FlashWriter®*

FPS™

F-PFS™

FRFET®

Global Power ResourceSM

Green FPS™

Green FPS™e-Series™

Gmax™

GTO™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MillerDrive™

MotionMax™

Motion-SPM™

OPTOLOGIC®

OPTOPLANAR®

PDP SPM™

Power-SPM™

PowerTrench®

PowerXS™

Programmable Active Droop™

QFET®

QS™

Quiet Series™

RapidConfigure™

™

Saving our world, 1mW/W/kW at a time™

SmartMax™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

Sync-Lock™

®*

ThePower Franchise®

TinyBoost™

TinyBuck™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

TriFault Detect™

TRUECURRENT™*

µSerDes™

UHC®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR

CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE

SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,

WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to

cause the failure of the life support device or system, or to affect its

safety or effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,

under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.

Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failedapplications,

and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of

counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are

listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have

full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technicalandproduct information.

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any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our

customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in

any manner without notice.

Preliminary Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes

at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only.

Rev. I40

First Production

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers