2N4427
SILICON
NPN RF TRANSISTOR
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 2.0 V
Continuous Collector Current IC 400 mA
Continuous Base Current IB 400 mA
Power Dissipation PD 1.0 W
Power Dissipation (TC=25°C) PD 3.5 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEV V
CE=40V, VBE=1.5V 100 μA
ICEV V
CE=12V, VBE=1.5V, TC=150°C 5.0 mA
ICEO V
CE=12V 20 μA
IEBO V
EB=2.0V 100 μA
BVCER I
C=5.0mA, RBE=10Ω 40 V
BVCEO I
C=5.0mA 20 V
VCE(SAT) I
C=100mA, IB=20mA 0.5 V
hFE V
CE=5.0V, IC=100mA 10 200
hFE V
CE=5.0V, IC=360mA 5.0
fT V
CE=15V, IC=50mA, f=200MHz 500 MHz
Cob V
CB=12V, IE=0, f=1.0MHz 4.0 pF
Gpe V
CC=12V, Pin=100mW, f=175MHz 10 dB
η V
CC=12V, Pout=1.0W, f=175MHz 50 %
Pin V
CC=12V, Pout=1.0W, f=175MHz 100 mW
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4427 is a
silicon NPN epitaxial planar RF transistor mounted
in a hermetically sealed package designed for high
frequency amplifier applications.
TO-39 CASE
R1 (4-June 2013)
www.centralsemi.com
2N4427
SILICON
NPN RF TRANSISTOR
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
www.centralsemi.com
R1 (4-June 2013)
2N4427
SILICON
NPN RF TRANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
R1 (4-June 2013)
www.centralsemi.com
