SGS-THOMSON TLO74 IT NICROELECTRONICS TLO74A - TLO74B LOW NOISE QUAD J-FET OPERATIONAL AMPLIFIERS as LOW POWER CONSUMPTION = WIDE COMMON-MODE (UP TO Vcc") AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT a a, LOWNOISE en = 15nVNHz (typ) on OUTPUT SHORT-CIRCUIT PROTECTION HIGH INPUT IMPEDANCE J-FET INPUT N STAGE DIP14 LOW HARMONIC DISTORTION : 0.01% (typ) INTERNAL FREQUENCY COMPENSATION LATCH UP FREE OPERATION HIGH SLEW RATE : 16V/us (typ) (Plastic Package) D so14 (Plastic Micropackage) DESCRIPTION ORDER CODES The TL074, TLO74A and TLO74B are high speed T i Packaae J-FET input quad operational amplifiers incorporating Part Number Range N = well matched, high voltage J-FET and bipolar transis- TLO7aM/AM/B 55C. 125C torsin a monolithic integrated circuit. ~~ The devices feature high slew rates, low input bias and TLO?avAV/BI 40 C+ 0 c offset currents, and low offset voltage temperature TLO74C/AC/BG oe, +70C coefficient. PIN CONNECTIONS (top view) Example : TLO74IN NA Output 1 1 O | 14 Output 4 Inverting Input 1 2 ds <p 13 Inverting Input 4 Non-inverting Input 1 3 O rd 12 Non-inverting Input 4 Vect 4 ia | 11. Vec- Non-inverting Input 2 5 O | 10 Non-inverting Input 3 Inverting Input2 6 ea <b 9 Inverting Input 3 Output2 7 C | 8 Output 3 February 1996 1/10 OF4-07.TRL O74-01. EPSTLO74 - TLO74A - TLO74B SCHEMATIC DIAGRAM Veo? 7] ~ P Non-i ti omeysnput LI Inverting input Ql 100 5992 {_] Output 1 00Q| 1/4 TLO74 | 0 | tt yy ' 8.2k | A 1.3k 35k 1.3k 35k 100Q Veo L] ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Vec Supply Voltage - (note 1) +18 Vv Vi Input Voltage - (note 3) +15 Vv Via Differential Input Voltage - (note 2) +30 Vv Prot Power Dissipation 680 mW Output Short-circuit Duration - (note 4) Infinite Toper | Operating Free Air Temperature Range TLO74C,AC,BC 0 to 70 C TLO741,Al,Bl 40 to 105 TLO74M,AM,BM 55 to 125 Notes : 1. All voltage values, except differential voltage, are with resped. to the zero reference level (ground) of the supply voltages where the zero reference level is the midpoint between Vcc and Vcc . 2. Differential voltages are at the non-inverting input terminal with respect to the inverting input terminal. 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 volts, whichever is less. 4. The output may be shorted to ground or to either supply. Temperature and /or supply voltages must be limited to ensure that the dissipation rating is not exceeded. 2/10 ky7, SES THOMEC , MICROELECTRONICS O74-02.EPS 074-02. TRETLO74 - TLO74A - TLO74B ELECTRICAL CHARACTERISTICS Voc = +15V, Tamb = 25C (unless otherwise specified) TLO74I,M,AC, AI BILE: TLO74C Symbol Parameter AM,BC,BI,BM Unit Min. | Typ. | Max. | Min. | Typ. | Max. Vio Input Offs et Voltage (Rs = 50) mV Tamb = 25C 3 6 3 10 TLO74BC,BI,BM 1 3 Tmin. S Tamb S Tmax. 7 13 TLO74BC,BI,BM 5 DVio Input Offs et Voltage Drift 10 10 uVPC lio Input Offs et Current * Tamb = 25C 5 100 5 | 100 pA Tmin. S Tamb < Tmax. 4 10 nA lib Input Bias Current * Tamb = 25C 20 200 30 200 pA Trin. S Tam Tmax. 20 20 nA Ava Large Signal Voltage Gain (RL = 2kQ, Vo = +10V) V/mV Tamb = 25C 50 200 25 | 200 Trin. S Tam Tmax. 25 15 SVR Supply Voltage Rejection Ratio (Rs = 50Q) dB Tamb = 25 80 86 70 86 Twin. $ toe < Tmax. 80 70 lec Supply Current, per Amp, no Load mA Tamb = 25C 1.4 2.5 1.4 |] 25 Tmin. S Tamb S Tmax. 2.5 2.5 Vicm Input Common Mode Voltage Range +11 | +15 +11 | +15 Vv -12 -12 CMR_ | Common Mode Rejection Ratio (Rs = 50Q) dB Tamb = 25C 80 86 70 86 Tmin. S Tamb S Tmax. 80 70 los Output Short-circuit Current mA Tamb = 25C 10 40 60 10 40 60 Tmin. S Tamb < Tmax. 10 60 10 60 +Vopp_ | Output Voltage Swing V Tamb = 25C RL= 2kQ 10 12 10 12 Ri = 10kQ 12 | 13.5 12 | 13.5 Tmin. S Tamb S Tmax. RL= 2kQ 10 10 Ri = 10kQ 12 12 SR Slew Rate (Vin = 10V, RL = 2kQ, C_ = 100pF, Vis Tamb = 25C, unity gain) 8 16 8 16 t Rise Time, (Vin = 20mV, RL = 2kQ, CL= 100pF, us Tame = 25C, unity gain) 0.1 0.1 Kov Overshoot (Vin = 20mV, Ri = 2k, CL = 100pF, % Tamb = 25C, unity gain) 10 10 GBP Gain Bandwidth Product (f = 100kHz, MHz Tame = 25C, Vin = 10mV, Ri = 2kQ, CL = 100pF) 2.5 4 2.5 4 Ri Input Resistance 101 10'? Q THD Total Harmonic Distortion (f = 1kHz, Avy = 20cB, % RL = 2kQ, CL = 100pF, Tamb = 25C, Vo = 2Vpp) 0.01 0.01 Equivalent Input Noise Voltage nv n | (f= 1kHz, Rs = 1002) 15 15 az om Phase Margin 45 45 Degrees Voi/Vo2 | Channel Separation (Ay = 100) 120 120 dB * The input bias currents are junction leakage currents which approximately double for every 10C increase in the junction temperature. Gy $GS-THOMSON 3/10 2 ickOELECTROMIES OF 4-03. TRLTLO74 - TLO74A - TLO74B MAXIMUM PEAK-TO-PEAK OUTPUT MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE VERSUS FREQUENCY VOLTAGE VERSUS FREQUENCY R= 10kQ Tamb = +25 Ry = 2kQ amb = +25 Vec= tl See Figure 2 ccm t Fi 2 Hii UT at Voo= +10V Veo = 10V VOLTAGE (V) MAXIMUM PEAK-TO-PEAKOUTPUT 100 1K 10K 100K 1M 10M FREQUENCY (Hz) 100 1K 10K 100K 1M 10M FREQUENCY (Hz) MAXIMUMPEAK-TO-PEAK OUTPUT VOLTAGE (V) OF4-02 EPS 074-04. EPS MAXIMUM PEAK-TO-PEAK OUTPUT MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE VERSUS FREQUENCY VOLTAGE VERSUS FREE AIR TEMP. 2 Tamb = +25 C V.= + 15V EF a R amb = +2 ce=t > | Ry = 2kQ 5 26 dered sede errr ere tree ed | as See Figure 2 Q 20 ! , OB na R, = 10ka tt a. 5 15 4 45 Tamb = -55 C O< ere eR, = 2k we wi 10 2 <8 3 o 5 Voce = 15V i Tamb = +125 C 2 See Figure 2 0 1 1 = 10k 40k 100k 400k 1M 4M 10M = -75 -50 -25 0 25 50 75 -50 125 FREQUENCY (Hz) i s TEMPERATURE (C) i MAXIMUM PEAK-TO-PEAK OUTPUT MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE VERSUS LOAD RESISTANCE VOLTAGE VERSUS SUPPLY VOLTAGE kK a 30 - 30; E - 5 35 Veg =#15V a R, = 10 kQ Q Tamb= +25C 5 25 F- Tomo = +25C ra <= See Figure 2 Oo WS 20 < 20 a Ow He Lo Fe 15 Cw 15 bo Ze eg WwW O 10 SE 10 o> <a = wu O 4 5 a> 5 2 = = =) xs 0 = = 0.102 04 0712 4 #7 0, & Oe 4 6 8 1 12 14 6 S SUPPLY VOLTAGE (+V) LOAD RESISTANCE (k Q) O74-O7 EPS O74-G2.EPS ano K7 868:THOMsoN > MICROELECTRONICSTLO74 - TLO74A - TLO74B INPUT BIAS CURRENT VERSUS FREE AIR TEMPERATURE 100 0.1 INPUT BIAS CURRENT (nA) 0.01 -50 -25 0 25 50 75 TEMPERATURE (C) 100 125 074-08. EPS LARGE SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT VERSUS FREQUENCY w 2 10k | ae 100 TANI] DIFFERENTIALI || 180 ae PHASE SHIET [MI |) PORICAT oz |_] PH AMPLIFICATION S65 (right scale) | N (left scale) ze io HH TH . 90 bE R. =2kQ i Ze | Cy =100pF N B= ytVcc =t15V tH 0 a Tamb = 4125 C N 100 1K 10K 100K 1M 10M FREQUENCY (Hz) i SUPPLY CURRENT PER AMPLIFIER VERSUS FREE AIR TEMPERATURE 2.0 1.8 Voc -+15V _~ 1.6 No signal 1.4 No load 5 1.2 cr) tO oc 2 0.8 3 > 0.6 a) ae 0.4 B 02 0 -75 -80 = -25 0 25 50 75 100 125 TEMPERATURE (C) O74-12.EPS DIFFERENTIAL VOLTAGE AMPLIFICATION (V/V) nN 3 TOTAL POWER DISSIPATION (mW) COMMON MODE MODE REJECTION IST A SGS-THOMSON > MICROELECTRONICS LARGE SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION VERSUS FREE AIR TEMPERATURE 1000 400 200 100 -75 -50 -25 0 25 50 75 100 125 TEMPERATURE (C) 074-70. EPS TOTAL POWER DISSIPATION VERSUS FREE AIR TEMPERATURE 250 225 200 175 150 125 100 75 50 25 0 Voog = 15V No signal No load -75 = -50 -25 0 25 50 75 100 125 TEMPERATURE (C) O74-12.EPS COMMON MODE REJECTION RATIO VERSUS FREE AIR TEMPERATURE 89 R, = 10 kQ Vo o= 15V 88 87 86 RATIO (dB) 85 84 83 -75 -50 -25 0 25 50 75 100 125 TEMPERATURE (C) OF 414. EPS 5/10TLO74 - TLO74A - TLO74B VOLTAGE FOLLOWER LARGE SIGNAL OUTPUT VOLTAGE VERSUS PULSE RESPONSE ELAPSED TIME iq Oo < 5 OUTPUT > OVERSHOOT . 9 E Bs o ES F 2 Voo= 415V S a Rp = 2 kQ 5 Vog = 215V a Cy= 100pF FE R, =2kQ 5 Thmb = +25 C t Tamb = +26C jal r G 0 O5 1 15 2 25 3 35 0 O1 02 083 04 05 06 07 TIME (us) i TIME ( us) i EQUIVALENT INPUT NOISE VOLTAGE TOTAL HARMONIC DISTORTION VERSUS VERSUS FREQUENCY FREQUENCY 1 Veco = +15V z Vee 158 i Ay =10 E 0.4 Anyi oF Ris = 100 8 S ot EY Borns $v 5 g Tamb = +25C 2 = 004 T Tratnc= S2BOC Zz Qf = Ww z $ = 0.004 3 z o 0.001 10 40 100 400 1k 4k 10k 40k 100k 100 400 1k 4k 10k 40k 100k FREQUENCY (Hz) & FREQUENCY (Hz) i 6/10 Gy $68-THOMSON JF, ICROELECTRONIGSTLO74 - TLO74A - TLO74B PARAMETER MEASUREMENT INFORMATION Figure 1: Voltage Follower Figure 2 : Gain-of-10 Inverting Amplifier 1/4 TLo74 Oe C, = 100pF RL =2k Q Tre. ae O74 19. EPS TYPICAL APPLICATIONS AUDIO DISTRIBUTION AMPLIFIER fo = 100kHz 1/4 im O TLov4 * Output A + Lt 1 UF TLO74 1/4 Input Off TLO74 QO Output B 100k Q < Qo OF. ' + 100 HF 1/4 TLO74 *_() Output C {77 8GS-THOMSON 70 MIGROELECTROMIES OF 4-20.EPS O74-21.EPSTLO74 - TLO74A - TLO74B TYPICAL APPLICATIONS (continued) POSITIVE FEEDBACK BANDPASS FILTER 43kQ Input oO Output A 16kQ Ls | pre 43k 9 {| 43kQ 220pF 1.5kQ {! Output B Ground OUTPUT A OUTPUT B SECOND ORDER BANDPASS FILTER fo = 100kHz ; Q = 30; Gain = 16 OF4-23 MG CASCADED BANDPASS FILTER fo = 100kHz ; Q = 69 ; Gain = 16 gio K7 868:THOMsoN > MICROELECTRONICS 074.22 EPS OF 4-24, MGTLO74 - TLO74A - TLO74B PACKAGE MECHANICAL DATA 14 PINS - PLASTIC DIP OR CERDIP L rf HH = - , LP 2 B e E | D Py 4 8 ) 1 7 Li LI LI! LI LI UW! Ud Dimensions Millimeters Inches Min. Typ. Max. Min. Typ. Max. al 0.51 0.020 B 1.39 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 i 5.1 0.201 L 3.3 0.130 Z 1.27 2.54 0.050 0.100 9/10 IST A SGS-THOMSON > MICROELECTRONICS PAR OIPIA. EPS OP IE TALTLO74 - TLO74A - TLO74B PACKAGE MECHANICAL DATA 14 PINS - PLASTIC MICROPACKAGE (SO) wl af e3 D Loooooh, 4 8 we bi re 1 UUUUU UU Dimensions Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 1.75 0.069 al 0.1 0.2 0.004 0.008 a2 1.6 0.063 b 0.35 0.46 0.014 0.018 b1 0.19 0.25 0.007 0.010 Cc 0.5 0.020 cl 45 (typ.) D 8.55 8.75 0.336 0.334 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 F 3.8 4.0 0.150 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.020 0.050 M 0.68 0.027 S 8 (max.) Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsi- bility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publicationare subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1996 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands 10/10 Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. i $GS-THOMSON MICROELECTRONICS PM-SOIG EPS SOMTEL OADEA CODE :