Description
This Alcatel 1916 LMM contains an Alcatel
DFB laser with monolithically integrated
electro-absor ption modulator (ILM). This
chip provides much lower dispersion
penalties than a directly modulated DFB,
without the complexity of LiN bO3 external
modulators. The Alcatel 1916 LMM is
optimized for ultra long-haul transmission
systems using non-dispersion shifted and
optical fiber amplifiers.
Features
• Very low dispersion penalty over 750 km
of fiber for 2 .5 Gbit/s oper ation
• Wavelength selection according to ITU-T G.692
• Industry-standard 14-pin butterfly package
• High frequency butterfly package with
50 Ω RF impedance
• Low drive voltage ( ≤ 2 Vpp)
• InGaAsP monolithically integrated DFB laser and
modulator chip
• Internal optical isolator
Applications
• STM-16 and OC-48 ultra long-haul
transmission systems
• Terminals for submarine tr ansmission systems
• Digital WDM CA TV transmission
Optical characteristics
Parameter Symb. Conditions Min Typical Max Units
Threshold current Ith CW, Vbias = 0 V 5 17 35 mA
Operating current Iop CW, Vbias = 0 V 60 80 mA
Optical output power PAVE Iop, Vmod, [1] 0 dBm
Laser forward voltage VF CW, Iop, Vbias = 0 V 2 V
Emission wavelength λm See table 1 nm
∆(emitted-tar get) wavelength ∆λe See [3 ] - 0.1 + 0.1 nm
Laser chip tem perature range for tunability Tλ See [3] 20 30 °C
Modulator bias voltage Vbias See [1] - 1 0 V
Modulator drive voltage Vmod See [1] 2 V
Dynamic extinction ratio DER See [1] 10 dB
Side mode suppr ession SMSR @ Iop 35 dB
Cut off fr equency S21 - 3 dB 4 GHz
RF return loss S11 DC to 3 GHz 10 dB
Dispersion penalty ∆s See [1], [2 ], [3] 2 dB
Tracking error TR Tsubmount = 25 °C, Tcase = 65 °C
If = 100 mA, Q = 10 log [P(65 °C)/P(25 °C)] - 0.5 0.5 dB
Rise time / Fall time Tr/Tf See [1], [2], 10%, 90% 140 ps
Wavelength drift vs Tcase ∆λ/∆Tc 0.2 0.5 pm/°C
Monitor diode current Im Iop, VM = - 5 V 0.2 0.5 1.5 mA
Dark current Id 0.1 µA
TEC current It ∆T= 45 °C, Iop= 100 mA, TC
= 65 °C, Vbias= - 1 V 1.3 A
TEC voltage Vt ∆T= 45 °C, Iop= 100 mA, TC
= 65 °C, Vbias= - 1 V 2.5 V
Thermistor resistance RTH
9.5 10.5 KΩ
Notes : All limits start of life Tcase = 25 °C, Tsubmount = 20 °C to 30 °C, Vr = - 5 V, unless otherwise stated.
[1] BER = 10-10
; 2.488 Gbit/s modulation; 223
-1 PRBS; NZR line code; DER ≥ 10dB [2] 7200 ps/nm dispersion, assuming fiber with an average dispersion of 18 ps/nm/km
[4] Tsubmount = Tλ. Tλ is chip temperature required to meet target wavelength (see table 1) [3] 12800 ps/nm dispersion, assuming fiber with an average dispersion of 18 ps/nm/km
Absolute maximum ratings
Parameters Min Max Unit
Operating case temperature 0 65 °C
Stora
e tem
erature -40 85 °C
Laser forward current 150 m
Laser reverse volta
e 2
Modulator forward volta
e 1
Modulator reverse volta
e 5
Photodiode forward current 1 m
Photodiode reverse volta
e20
TEC Volta
e2.8
TEC Current 1.4
ESD a
lied on modulator 500
ESD a
lied on laser [1] 2000
Lead solderin
time
at 260°C
10 s
Packin
Mountin
Screw Tor
ue 0.2 nm
[1] Human body model Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
lcatel 1916 L MM
12800 ps/nm W DM 2.5 Gbit/s d i gital Laser Module
ith integrated electro-absorption Modulator