SEMICONDUCTOR BC807 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L D 3 H G A 2 1 MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current IC -800 mA Emitter Current IE 800 mA PC* 350 mW Tj 150 Tstg -55150 Collector Power Dissipation Junction Temperature Storage Temperature Range P J N M K C P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 DIM A B C D E G H J K L M N P Complementary to BC817. 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 * : Package Mounted On 99.9% Alumina 1080.6mm. ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-20V, IE=0 - - -0.1 A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A hFE(1) VCE=-1V, IC=-100mA 100 - 630 hFE(2) VCE=-1V, IC=-500mA 40 - - VCE(sat) IC=-500mA, IB=-50mA - - -0.7 V Base-Emitter Voltage VBE VCE=-1V, IC=-500mA - - -1.2 V Transition Frequency fT 80 - - MHz - 9 - pF DC Current Gain (Note) Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE Classification VCE=-5V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz 16:100250 , 25:160400 , 40:250630 Marking MARK SPEC Lot No. TYPE. BC807-16 BC807-25 BC807-40 MARK 5A 5B 5C 2000. 2. 28 Revision No : 2 Type Name 1/2 BC807 -800 V CE -600 3k -9 -8 -7 -6 =-1 DC CURRENT GAIN h FE -1k h FE - I C -5 -4 V -3 -2 I B =-1mA -400 -200 0 0 -0.2 COMMON -0.4 Ta=25 C -0.8 500 300 Ta=25 C 100 Ta=-25 C 50 30 -1 -3 -10 -30 -100 -300 -1k COLLECTOR CURRENT I C (mA) -0.6 -0.4 -0.2 0 -10 -20 -30 -40 COLLECTOR-EMITTER VOLTAGE V CE (V) COMMON EMITTER Ta=25 C -1000 -800 -8 -7 -6 -5 -4 -600 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1.0 -0.8 -1200 VCE(sat) - I C -3 COMMON EMITTER I C/I B =25 -1 -0.3 -0.1 Ta=25 C Ta=100 C -0.03 Ta=-25 C -0.01 -1 -3 -10 0 0 -1 -2 -3 -4 -5 -6 COLLECTOR-EMITTER VOLTAGE V CE (V) 500 30 10 -10 -3 -1 -0.2 -0.4 -0.6 -0.8 BASE-EMITTER VOLTAGE V BE (V) Revision No : 2 -1.0 COLLECTOR POWER DISSIPATION P C (mW) C =-2 5 Ta Ta =2 5 C C 00 Ta =1 -30 -3 -10 -30 -100 -300 -1k COLLECTOR CURRENT I C (mA) -300 -100 -1k 100 -1 COMMON EMITTER VCE =-1V -1k -300 COMMON EMITTER Ta=25 C VCE =-5V 300 I C - V BE -5k -100 f T - IC -2 I B =-1mA -200 -30 COLLECTOR CURRENT I C (mA) -3 -400 0 COLLECTOR CURRENT I C (mA) Ta=100 C 10 I C -V CE (LOW VOLTAGE REGION) COLLECTOR CURRENT I C (mA) 1k VCE =-1V BASE CURRENT I B (mA) 2000. 2. 28 COMMON EMITTER VCE =-1V EMITTER -0.6 TRANSITION FREQUENCY f T (MHz) BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (mA) STATIC CHARACTERISTICS P C - Ta 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2/2