5.5 GHz to 14 GHz,
GaAs MMIC Fundamental Mixer
Data Sheet HMC558A
Rev. C Document Feedback
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
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Tel: 781.329.4700 ©2016–2018 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
FEATURES
Conversion loss: 7.5 dB typical at 5.5 GHz to 10 GHz
Local oscillator (LO) to radio frequency (RF) isolation: 45 dB
typical at 5.5 GHz to 10 GHz
LO to intermediate frequency (IF) isolation: 45 dB typical at
10 GHz to 14 GHz
Input third-order intercept (IIP3): 21 dBm typical at 10 GHz
to 14 GHz
Input P1dB: 11.5 dBm typical at 10 GHz to 14 GHz
Input second-order intercept (IIP2): 55 dBm typical at 10 GHz
to 14 GHz
Passive double-balanced topology
Wide IF bandwidth: dc to 6 GHz
12-lead ceramic leadless chip carrier package
APPLICATIONS
Point to point microwave radios
Point to multipoint radios
Military end use
Instrumentation, automatic test equipment (ATE), and sensors
FUNCTIONAL BLOCK DIAGRAM
RF
HMC558A
LO
IF
15000-001
Figure 1.
GENERAL DESCRIPTION
The HMC558A is a general-purpose, double-balanced mixer in a
leadless RoHS compliant SMT package that can be used as an
upconverter or downconverter between 5.5 GHz and 14 GHz.
This mixer is fabricated in a gallium arsenide (GaAs) metal semi-
conductor field effect transistor (MESFET) process, and requires
no external components or matching circuitry.
The HMC558A provides excellent LO to RF and LO to IF isolation
due to optimized balun structures, and operates with LO drive
levels as low as 9 dBm. The RoHS compliant HMC558A eliminates
the need for wire bonding, and is compatible with high volume
surface-mount manufacturing techniques.
HMC558A Data Sheet
Rev. C | Page 2 of 15
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ............................. 5
Interface Schematics..................................................................... 5
Typical Performance Characteristics ............................................. 6
Downconverter Performance ......................................................6
Upconverter Performance ............................................................9
Return Loss and Isolation Performance .................................. 10
Spurious Performance ............................................................... 12
Theory of Operation ...................................................................... 13
Applications Information .............................................................. 14
Typical Application Circuit ....................................................... 14
Evaluation Board Information.................................................. 14
Outline Dimensions ....................................................................... 15
Ordering Guide .......................................................................... 15
REVISION HISTORY
7/2018Rev. B to Rev. C
Changes to Spurious Performance Section ................................. 12
Added IF Spurious Performance Table ........................................ 12
12/2017Rev. A to Rev. B
Changes to Figure 16 ........................................................................ 7
Changes to Ordering Guide .......................................................... 15
6/2017Rev. 0 to Rev. A
Changes E-12-1 to E-12-4 ............................................ Throughout
Updated Outline Dimensions ....................................................... 15
Changes to Ordering Guide .......................................................... 15
11/2016Revision 0: Initial Version
Data Sheet HMC558A
Rev. C | Page 3 of 15
SPECIFICATIONS
LO drive level = 15 dBm, TA = 25°C, IF = 100 MHz, upper sideband, unless otherwise noted. All measurements performed as a
downconverter.
Table 1.
Parameter Min Typ Max Unit
RF FREQUENCY RANGE
5.5
14
GHz
LO FREQUENCY RANGE 5.5 14 GHz
LO DRIVE LEVEL 15 dBm
IF FREQUENCY RANGE DC 6 GHz
PERFORMANCE AT RF = 5.5 GHz to 10 GHz
Conversion Loss 7.5 9.5 dB
Single Sideband (SSB) Noise Figure 7.5 dB
Input Third-Order Intercept (IIP3) 15 17.5 dBm
Input 1 dB Compression Point (IP1dB) 10 dBm
Input Second-Order Intercept (IIP2) 50 dB
RF to IF Isolation
8
16
dB
LO to RF Isolation
35
45
dB
LO to IF Isolation 20 35 dB
PERFORMANCE AT RF = 10 GHz to 14 GHz
Conversion Loss 8.5 10 dB
SSB Noise Figure 10 dB
IIP3 16 21 dBm
IP1dB 11.5 dBm
IIP2 55 dB
RF to IF Isolation 10 19 dB
LO to RF Isolation 30 40 dB
LO to IF Isolation 20 45 dB
HMC558A Data Sheet
Rev. C | Page 4 of 15
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
RF Input Power 25 dBm
LO Input Power 25 dBm
IF Input Power 25 dBm
IF Source/Sink Current 3 mA
Maximum Junction Temperature 175°C
Continuous PDISS (T = 85°C) (Derate
5.5 mW/°C Above 85°C)
495 mW
Operating Temperature Range
−40°C to +85°C
Storage Temperature Range −65°C to +150°C
Lead Temperature Range (Soldering 60 sec) 65°C to +150°C
Electrostatic Discharge (ESD) Sensitivity
Human Body Model (HBM) 2500 V (Class 2)
Field Induced Charged Device Model
(FICDM)
1000 V (Class C5)
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
Table 3. Thermal Resistance
Package Type
JC
Unit
E-12-41 180 °C/W
1 See JEDEC standard JESD51-2 for additional information on optimizing the
thermal impedance (PCB with 3 × 3 vias).
ESD CAUTION
Data Sheet HMC558A
Rev. C | Page 5 of 15
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
HMC558A
TOP VIEW
(Not to Scale)
9
8
7
GND
RF
GND
NIC
NIC
NIC
GND
IF
GND
1
2
3
GND
LO
GND
4 5 6
12 11 10
15000-002
NOTES
1. NIC = NO INTERNAL CONNECTION.
2. EXPOSED PAD. CONNECT THE EXPOSED PAD TO A LOW
IMPEDANCE THERMAL AND ELECTRICAL GROUND PLANE.
Figure 2. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1, 3, 4, 6, 7, 9 GND Ground. See Figure 6 for the ground interface schematic.
2 LO Local Oscillator Port. This pin is ac-coupled and matched to 50. See Figure 4 for the LO interface schematic.
5 IF DC-Coupled IF. For applications not requiring operation to dc, dc block this port externally using a series
capacitor whose value is chosen to pass the necessary IF frequency range. For operation to dc, this pin
must not source or sink more than 3 mA of current, or device nonfunction and possible device failure may
result. See Figure 5 for the IF interface schematic.
8 RF RF Port. This pin is ac-coupled internally and matched to 50. See Figure 3 for the RF interface schematic.
10, 11, 12 NIC No Internal Connection. These pins can be grounded.
EPAD Exposed Pad. Connect the exposed pad to a low impedance thermal and electrical ground plane.
INTERFACE SCHEMATICS
RF
15000-003
Figure 3. RF Interface
LO
15000-004
Figure 4. LO Interface
IF
15000-005
Figure 5. IF Interface
GND
15000-006
Figure 6. Ground Interface
HMC558A Data Sheet
Rev. C | Page 6 of 15
TYPICAL PERFORMANCE CHARACTERISTICS
DOWNCONVERTER PERFORMANCE
Data taken as downconverter, upper sideband (low-side LO), TA = 25°C, LO drive level = 15 dBm unless otherwise specified.
–20
–18
–16
–14
–12
–10
–8
–6
–4
–2
0
45678910 11 12 13 14 15 16
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
–40°C
+25°C
+85°C
15000-107
Figure 7. Conversion Gain vs. RF Frequency at Various Temperatures,
IF = 100 MHz
0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
27.5
30.0
45678910 11 12 13 14 15 16
IP3 (dBm)
RF FREQUENCY (GHz)
–40°C
+25°C
+85°C
15000-108
Figure 8. Input IP3 vs. RF Frequency at Various Temperatures,
IF = 100 MHz
–20
–18
–16
–14
–12
–10
–8
–6
–4
–2
0
678910 11 12 13 14 15 16
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
–40°C
+25°C
+85°C
15000-109
Figure 9. Conversion Gain vs. RF Frequency at Various Temperatures,
IF = 2 GHz
–20
–18
–16
–14
–12
–10
–8
–6
–4
–2
0
45678910 11 12 13 14 15 16
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
9dBm
12dBm
15dBm
18dBm
20dBm
15000-110
Figure 10. Conversion Gain vs. RF Frequency at Various LO Powers,
IF = 100 MHz
–5.0
–2.5
0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
27.5
30.0
32.5
45678910 11 12 13 14 15 16
IP3 (dBm)
RF FREQUENCY (GHz)
9dBm
12dBm
15dBm
18dBm
20dBm
15000-111
Figure 11. Input IP3 vs. RF Frequency at Various LO Powers,
IF = 100 MHz
–20
–18
–16
–14
–12
–10
–8
–6
–4
–2
0
6 7 8 9 10 11 12 13 14 15 16
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
9dBm
12dBm
15dBm
18dBm
20dBm
15000-112
Figure 12. Conversion Gain vs. RF Frequency at Various LO Powers,
IF = 2 GHz
Data Sheet HMC558A
Rev. C | Page 7 of 15
–7.5
–5.0
–2.5
0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
27.5
30.0
32.5
678910 11 12 13 14 15 16
IP3 (dBm)
RF FREQUENCY (GHz)
–40°C
+25°C
+85°C
15000-113
Figure 13. Input IP3 vs. RF Frequency at Various Temperatures,
IF = 2 GHz
–25.0
–22.5
–20.0
–17.5
–15.0
–12.5
–10.0
–7.5
–5.0
–2.5
0
0123456789
CONVERSION GAIN (dB)
IF FREQUENCY (GHz)
–40°C
+25°C
+85°C
15000-114
Figure 14. Conversion Gain vs. IF Frequency at Various Temperatures
–12.5
–10.0
–7.5
–5.0
–2.5
0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
27.5
30.0
32.5
35.0
678910 11 12 13 14 15 16
IP3 (dBm)
RF FREQUENCY (GHz)
9dBm
12dBm
15dBm
18dBm
20dBm
15000-116
Figure 15. Input IP3 vs. RF Frequency at Various LO Powers,
IF = 2 GHz
18
0
2
4
6
8
10
12
14
16
4 5 6 7 8 9 10 11 12 13 14 15 16
P1dB (dBm)
RF FREQUENCY (GHz)
15000-117
–40°C
+25°C
+85°C
Figure 16. Input P1dB vs. RF Frequency at Various Temperatures,
IF = 100 MHz
0
5
10
15
20
25
45678910 11 12 13 14 15 16
NOISE FIGURE (dB)
RF FREQUENCY (GHz)
–40°C
+25°C
+85°C
15000-120
Figure 17. SSB Noise Figure vs. RF Frequency at Various Temperatures,
IF = 100 MHz
0
5
10
15
20
25
45678910 11 12 13 14 15 16
NOISE FIGURE (dB)
RF FREQUENCY (GHz)
9dBm
12dBm
15dBm
18dBm
15000-123
Figure 18. SSB Noise Figure vs. RF Frequency at Various LO Powers,
IF = 100 MHz
HMC558A Data Sheet
Rev. C | Page 8 of 15
0
10
20
30
40
50
60
70
80
90
45678910 11 12 13 14 15 16
IP2 (dBm)
RF FREQUENCY (GHz)
–40°C
+25°C
+85°C
15000-125
Figure 19. Input IP2 vs. RF Frequency at Various Temperatures,
IF = 100 MHz
0
10
20
30
40
50
60
70
80
90
678910 11 12 13 14 15 16
IP2 (dBm)
RF FREQUENCY (GHz)
–40°C
+25°C
+85°C
15000-126
Figure 20. Input IP2 vs. RF Frequency at Various Temperatures,
IF = 2000 MHz
0
10
20
30
40
50
60
70
80
90
45678910 11 12 13 14 15 16
IP2 (dBm)
RF FREQUENCY (GHz)
9dBm
12dBm
15dBm
18dBm
20dBm
15000-128
Figure 21. Input IP2 vs. RF Frequency at Various LO Powers,
IF = 100 MHz
0
10
20
30
40
50
60
70
80
90
678910 11 12 13 14 15 16
IP2 (dBm)
RF FREQUENCY (GHz)
9dBm
12dBm
15dBm
18dBm
20dBm
15000-129
Figure 22. Input IP2 vs. RF Frequency, at Various LO Powers,
IF = 2000 MHz
Data Sheet HMC558A
Rev. C | Page 9 of 15
UPCONVERTER PERFORMANCE
Data taken as upconverter, upper sideband, TA = 25°C, LO drive level = 15 dBm unless otherwise specified.
–20
–18
–16
–14
–12
–10
–8
–6
–4
–2
45678910 11 12 13 14 15 16
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
–40°C
+25°C
+85°C
15000-030
Figure 23. Conversion Gain vs. RF Frequency for Various Temperatures,
IF = 100 MHz
–5.0
–2.5
0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
27.5
30.0
32.5
45678910 11 12 13 14 15 16
IP3 (dBm)
RF FREQUENCY (GHz)
–40°C
+25°C
+85°C
15000-031
Figure 24. Input IP3 vs. RF Frequency for Various Temperatures,
IF = 100 MHz
–20
–18
–16
–14
–12
–10
–8
–6
–4
–2
0
45678910 11 12 13 14 15 16
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
12dBm
15dBm
18dBm
20dBm
15000-032
Figure 25. Conversion Gain vs. RF Frequency for Various LO Powers,
IF = 100 MHz
–5.0
–2.5
0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
27.5
30.0
32.5
45678910 11 12 13 14 15 16
IP3 (dBm)
RF FREQUENCY(GHz)
12dBm
15dBm
18dBm
20dBm
15000-033
Figure 26. Input IP3 vs. RF Frequency for Various LO Powers,
IF = 100 MHz
HMC558A Data Sheet
Rev. C | Page 10 of 15
RETURN LOSS AND ISOLATION PERFORMANCE
Data taken at TA = 25°C, LO drive level = 15 dBm unless otherwise specified.
0
10
20
30
40
50
60
70
80
4 5 6 7 8 9 10 11 12 13 14 15 16
ISOLATION (dB)
LO FREQUENCY (GHz)
–40°C
+25°C
+85°C
15000-115
LO TO RF
LO TO IF
Figure 27. LO to RF and LO to IF Isolation vs. LO Frequency at Various
Temperatures, IF = 100 MHz
0
5
10
15
20
25
30
35
40
45678910 11 12 13 14 15 16
ISOLATION (dB)
RF FREQUENCY (GHz)
–40°C
+25°C
+85°C
15000-122
Figure 28. RF to IF Isolation vs. RF Frequency at Various Temperatures,
IF = 100 MHz
0
10
20
30
40
50
60
70
80
45678910 11 12 13 14 15 16
ISOLATION (dB)
LO FREQUENCY (GHz)
9dBm
12dBm
15dBm
18dBm
20dBm
15000-118
LO TO RF
LO TO IF
Figure 29. LO to RF and LO to IF Isolation vs. LO Frequency at Various
LO Powers, IF = 100 MHz
0
5
10
15
20
25
30
35
40
45678910 11 12 13 14 15 16
ISOLATION (dB)
RF FREQUENCY (GHz)
9dBm
12dBm
15dBm
18dBm
15000-119
Figure 30. RF to IF Isolation vs. RF Frequency at Various LO Powers,
IF = 100 MHz
Data Sheet HMC558A
Rev. C | Page 11 of 15
–40
–35
–30
–25
–20
–15
–10
–5
0
5
10
45678910 11 12 13 14 15 16
RETURN LOSS (dB)
LO FREQUENCY (GHz)
–40°C
+25°C
+85°C
15000-121
Figure 31. LO Return Loss vs. LO Frequency at Various Temperatures
–40
–35
–30
–25
–20
–15
–10
–5
0
5
RETURN LOSS (dB)
15000-124
0.1 1.1 2.1 3.1 4.1 5.1 6.1 7.1 8.1 9.1 10.1
IF FREQUENCY (GHz)
–40°C
+25°C
+85°C
Figure 32. IF Return Loss vs. IF Frequency at Various Temperatures,
LO Power = 15 dBm, LO Frequency = 11 GHz
–40
–35
–30
–25
–20
–15
–10
–5
0
5
RETURN LOSS (dB)
15000-224
RF FREQUENCY (GHz)
–40°C
+25°C
+85°C
4 5 6 7 8 9 10 11 12 13 14 15 16
Figure 33. RF Return Loss vs. RF Frequency at Various Temperatures,
IF = 100 MHz, LO Power = 15 dBm
HMC558A Data Sheet
Rev. C | Page 12 of 15
SPURIOUS PERFORMANCE
Mixer spurious products are measured in decibels from either
below the RF or the IF output power level. N/A means not
applicable.
RF frequency = 8.1 GHz at 10 dBm, LO frequency = 8.0 GHz
at 15 dBm are applied. Spur values are (M × RF) (N × LO), IF
output = 100 MHz.
N × LO
0 1 2 3 4
M × RF
0 N/A −1 +24.7 +24.4 +35.9
1 +10.3 0 +22.7 +34.9 +54.3
2 +83.6 +59 +64 +58.9 +81.9
3 +79 +84.3 +77.8 +69.6 +75.7
4 +76.3 +78.4 +84.6 +85.7 +91.3
IF frequency = 100 MHz at −10 dBm, LO frequency = 10.0 GHz
at 15 dBm are applied. Spur values are (M × IF) + (N × LO).
N × LO
0 1 2 3 4
M × IF
−4 N/A N/A N/A N/A
−3 N/A +60 +77 +82.7 N/A
−2
N/A
+56.5
+70.2
+71.8
+74.8
−1 N/A 0 +29.1 +24.6 +45.5
0 N/A 1.4 +31.6 +27 +37.5
+1 +69.8 +0.3 +28 +24.9 +45.7
+2 N/A +55.8 +71.8 +74.4 +75.5
+3 N/A +60.6 +76.8 +84.2 +91.2
+4 N/A N/A N/A N/A N/A
Data Sheet HMC558A
Rev. C | Page 13 of 15
THEORY OF OPERATION
The HMC558A is a general-purpose double balanced mixer in a
leadless RoHS compliant SMT package that can be used as an
upconverter or downconverter between 5.5 GHz and 14 GHz. This
mixer is fabricated in a GaAs MESFET process, and requires no
external components or matching circuitry. The HMC558A
provides excellent LO to RF and LO to IF isolation due to
optimized balun structures and operates with LO drive levels as low
as 9 dBm. The RoHS compliant HMC558A eliminates the need for
wire bonding, and is compatible with high volume surface mount
manufacturing techniques.
HMC558A Data Sheet
Rev. C | Page 14 of 15
APPLICATIONS INFORMATION
TYPICAL APPLICATION CIRCUIT
9
8
7
1
2
3
4 5 6
12 11 10
LO RF
IF
15000-028
Figure 34. Typical Application Circuit
EVALUATION BOARD INFORMATION
The circuit board used in an application must use RF circuit
design techniques. Signal lines must have 50 impedance, and
the package ground leads and exposed pad must be connected
directly to the ground plane, similarly to that shown in Figure 35.
Use a sufficient number of via holes to connect the top and
bottom ground planes. The evaluation circuit board shown in
Figure 35 is available from Analog Devices, Inc., upon request.
J2
J1
U1
IF
RFLO
J3
Figure 35. HMC558A Evaluation Board Top Layer
Table 5. Bill of Materials for the EV1HMC558ALC3B Evaluation Board
Level
Item
Part Number
Quantity
Reference Designator
Description
1 1 117611-1 1 PCB, evaluation board
1 2 104935 2 J1 to J2 2.92 mm connector, SRI
1 3 105192 1 J3 SMA connector, Johnson
1 4 HMC558ALC3B 1 U1 Device under test (DUT)
Data Sheet HMC558A
Rev. C | Page 15 of 15
OUTLINE DIMENSIONS
03-02-2017-A
PKG-004837
0.50
BSC
0.32
BSC
BOTTOM VIEW
TOP VIEW
SIDE VIEW
0.08
BSC
1
4
6
7
9
10 12
3
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
0.36
0.30
0.24
PIN 1
EXPOSED
PAD
PIN 1
INDICATOR
3.05
2.90 SQ
2.75
2.10 BSC
1.00 REF
1.60
1.50 SQ
1.40
0.90
0.80
0.70
SEATING
PLANE
Figure 36. 12-Terminal Ceramic Leadless Chip Carrier [LCC]
(E-12-4)
Dimensions shown in millimeters
ORDERING GUIDE
Model1
Temperature
Range Description
Package
Option
Package Body
Material Lead Finish
MSL
Rating
HMC558ALC3B
−40°C to +85°C
12-Terminal Ceramic Leadless
Chip Carrier [LCC]
E-12-4
Alumina Ceramic
Gold over
Nickel
MSL3
HMC558ALC3BTR −40°C to +85°C 12-Terminal Ceramic Leadless
Chip Carrier [LCC]
E-12-4 Alumina Ceramic Gold over
Nickel
MSL3
HMC558ALC3BTR-R5 −40°C to +85°C 12-Terminal Ceramic Leadless
Chip Carrier [LCC]
E-12-4 Alumina Ceramic Gold over
Nickel
MSL3
EV1HMC558ALC3B Evaluation PCB Assembly
1 The HMC558ALC3B, HMC558ALC3BTR, and HMC558ALC3BTR-R5 are RoHS Compliant.
©20162018 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D15000-0-7/18(C)