Features
1 of 10
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
CGA-3318Z
DUAL CATV BROADBAND HIGH LINEARITY
SiGe HBT AMPLIFIER
RFMD’s CGA-3318Z is a high performance Silicon Germanium HBT MMIC Amplifier.
Designed with SiGe process technology for excellent linearity at an exceptional
price. A Darlington configuration is utilized for broadband performance. The hetero-
junction increases breakdown voltage and minimizes leakage current between
junctions. The CGA-3318Z contains two amplifiers for use in wideband Push-Pull
CATV amplifiers requiring excellent second order performance. The second and
third order non-linearities are greatly improved in the push-pull configuration.
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Amplifier Configuration
Lead-Free, RoHS Compliant,
and Green Packaging
Excellent CSO/CTB/XMOD
Performance at +34dBmV
Output Power Per Tone
Dual Devices in Each SOIC-8
Package Simplify Push-Pull
Configuration PC Board Lay-
out
5MHz to 900MHz Operation
Applications
CATV Head End Driver and
Predriver Amplifier
CATV Line Driver Amplifier
DS120502
Package: ESOP-8
CGA-3318Z
Dual CATV
Broadband
High Linearity
SiGe HBT
Amplifier
Parameter Specification Unit Condition
Min. Typ. Max.
Small Signal Gain 13.2 dB 5MHz
12.5 dB 50MHz and 500MHz
10.0 12.0 dB 870MHz
OIP2, Tone Spacing=1MHz 69.0 dBm 50MHz, POUT per tone=+6dBm
71.5 dBm 250MHz, POUT per tone
67.0 69.0 dBm 500MHz, POUT per tone
OIP3, Tone Spacing=1MHz 36.5 dBm 50MHz, POUT per tone=+6dBm
38.0 dBm 500MHz, POUT per tone=+6dBm
36.0 38.0 dBm 870MHz, POUT per tone=+6dBm
Output Power at 1dB Compression 20.0 dBm 50MHz
21.0 dBm 500MHz
18.6 20.6 dBm 870MHz
Input Return Loss 17.0 dBm 500MHz
10 dBm 50 - 870 MHz
Output Return Loss 12.0 dB 500MHz
10 dB 50 - 870MHz
Noise Figure 4.2 dB 50MHz, Balun Insertion Loss Included
4.3 dB 500MHz, Balun Insertion Loss Included
5.0 6.0 dB 870MHz, Balun Insertion Loss Included
Device Operating Voltage 3.9 4.1 4.3 V
Device Operating Current 135 150 165 mA
Thermal Resistance 50 °C/W (Junction to Lead)