DCR850G26
Phase Control Thyristor
DS6040-1 April 2011 (LN28251)
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FEATURES
Double Side Cooling
High Surge Capability
APPLICATIONS
High Power Drives
High Voltage Power Supplies
Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
VDRM and VRRM
V
Conditions
DCR850G26
DCR850G24
DCR850G22
DCR850G20
2600
2400
2200
2000
Tvj = -40°C to 125°C,
IDRM = IRRM = 60mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM +100V
respectively
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR850G26
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
KEY PARAMETERS
VDRM 2600 V
IT(AV) 850 A
ITSM 11000 A
dV/dt* 1000 V/µs
dI/dt 200 A/µs
* Higher dV/dt selections available
Fig. 1 Package outline
Outline type code: G
(See Package Details for further information)
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CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Test Conditions
Max.
Units
Double Side Cooled
IT(AV)
Half wave resistive load
850
A
IT(RMS)
-
1330
A
IT
-
1200
A
SURGE RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
ITSM
Surge (non-repetitive) on-state current
10ms half sine, Tcase = 125°C
11.0
kA
I2t
I2t for fusing
VR = 0
0.605
MA2s
THERMAL AND MECHANICAL RATINGS
Symbol
Test Conditions
Min.
Max.
Units
Rth(j-c)
Double side cooled
DC
-
0.035
°C/W
Rth(c-h)
Double side cooled
DC
-
0.008
°C/W
Tvj
Blocking VDRM / VRRM
-
125
°C
Tstg
-40
140
°C
Fm
12
18
kN
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DYNAMIC CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Max.
Units
IRRM/IDRM
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
-
60
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125°C, gate open
1000
-
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 1000A
Repetitive 50Hz
-
200
A/µs
Gate source 30V, 10,
Non-repetitive
-
1000
A/µs
tr < 0.5µs, Tj = 125°C
VT
On-state voltage
IT = 1500A, Tcase = 125°C
1.70
V
VT(TO)
Threshold voltage
Tcase = 125°C
-
0.95
V
rT
On-state slope resistance
Tcase = 125°C
-
0.50
m
tgd
Delay time
VD = 67% VDRM, gate source 30V, 10
-
3.0
µs
tr = 0.5µs, Tj = 25°C
tq
Turn-off time
Tj = 125°C, VR = 100V, dI/dt = 10A/µs,
-
250
µs
dVDR/dt = 20V/µs linear to 67% VDRM
QS
Stored charge
IT = 1000A, tp = 1000us,Tj = 125°C,
dI/dt =10A/µs,
-
2200
µC
IRR
Reverse recovery current
-
125
A
IL
Latching current
Tj = 25°C,
-
1
A
IH
Holding current
Tj = 25°C,
-
200
mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Max.
Units
VGT
Gate trigger voltage
3
V
VGD
Gate non-trigger voltage
TBD
V
IGT
Gate trigger current
300
mA
IGD
Gate non-trigger current
TBD
mA
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CURVES
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.IT
Where A = 0.440868
B = 0.0637241
C = 0.000258024
D = 0.00399011
These values are valid for Tj = 125°C
Fig.2 Maximum &minimum on-state characteristics
i
τi (s)
Rthi (°C/kW)
1
0.7085781
19.71901
2
0.1435833
4.240625
3
0.0361520
7.963806
4
0.0021308
3.043661
Fig.3 Maximum (limit) transient thermal impedance – junction to case (°C/W)
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
0 1 2 3 4 5 6
Instantaneous on-state current, IT- (A)
Instantaneous on-state voltage,VT- (V)
Tj=25°C
Tj=125°C
0
0.01
0.02
0.03
0.04
0.001 0.01 0.1 1 10 100
Thermal Impedance Zth(j-c) (°C/W)
Time ( s )
Double side cooled
n
i
t
thithjc i
eRtR 11
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Fig.4 On-state power dissipation – sine wave
Fig.5 Maximum permissible case temperature,
double side cooled – sine wave
Fig.6 Maximum permissible case temperature,
double side cooled – rectangular wave
Fig.7 On-state power dissipation – rectangular wave
0
200
400
600
800
1000
1200
1400
1600
0100 200 300 400 500 600 700 800
Mean power dissipation - (W)
Mean on-state current, IT(AV) - (A)
180
120
90
60
30
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0100 200 300 400 500 600 700 800
Maximum case temperature, Tcase - (°C)
Mean on-state current, IT(AV) - (A)
180
120
90
60
30
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0100 200 300 400 500 600 700 800
Maximum case temperature, Tcase - (°C)
Mean on-state current, IT(AV) - (A)
d.c.
180
120
90
60
30
0
200
400
600
800
1000
1200
1400
0100 200 300 400 500 600 700 800
Mean power dissipation - (W)
Mean on-state current, IT(AV) - (A)
d.c.
180
120
90
60
30
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Fig.8 Multi-cycle surge current
Fig.9 Single-cycle I2t
Fig.10 Stored charge vs di/dt
Fig.11 Reverse recovery current vs di/dt
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
110 100
Surge current, ITSM - (KA)
Number of cycles
Conditons:
Tcase=125°C
VR=0
Pulse width = 10ms
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
110
I2t (MA2s)
Pulse width, tp- (ms)
Conditons:
Tcase=125°C
VR=0
half-sine wave
1000
1500
2000
2500
3000
3500
4000
4500
5000
110 100
Stored charge, QS- (uC)
Rate of decay of on-state current, di/dt - (A/us)
Conditons:
Tj=125°C
IT=1000A
VR=0
0
100
200
300
400
500
110 100
Reverse recovery current, IRR - (A)
Rate of decay of on-state current, di/dt - (A/us)
Conditons:
Tj=125°C
IT=1000A
VR=0
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Fig.12 Gate characteristics
A is Recommended Triggering Area.
B is Unreliable Triggering Area.
C is Recommended Gate Load Line.
Fig.13 Gate characteristics
0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
050 100 150 200 250 300 350 400 450 500
Gate trigger voltage, VGT - (V)
Gate trigger current IGT, - (mA)
Tj=25°C
Tj=125°C
Upper limit
Tj=-40°C
Lower limit
0.0
2.0
4.0
6.0
8.0
10.0
12.0
0.0 1.0 2.0 3.0 4.0
Gate trigger voltage, VGT - (V)
Gate trigger current IGT, -(A)
B
C
A
PGM=20W
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PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Package outline type code: G
Fig.14 Package outline
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IMPORTANT INFORMATION:
This publication is provided for information only and not for resale.
The products and information in this publication are intended for use by appropriately trained technical personnel.
Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute
any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of
the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements
are met. Should additional product information be needed please contact Customer Service.
Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical
errors. The information is provided without any warranty or guarantee of any kind.
This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the
most up to date version and has not been superseded.
The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property.
The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or
malfunction.
The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use
protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any
electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves.
Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the
product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include
potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design
and safety precautions should always be followed to protect persons and property.
Product Status & Product Ordering:
We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for
production. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification.
No actual design work on the product has been started.
Preliminary Information: The product design is complete and final characterisation for volume production is in
progress.The datasheet represents the product as it is now understood but details may change.
No Annotation: The product has been approved for production and unless otherwise notified by Dynex any
product ordered will be supplied to the current version of the data sheet prevailing at the
time of our order acknowledgement.
All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request.
Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their
respective owners.
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LIMITED
Doddington Road, Lincoln, Lincolnshire, LN6 3LF
United Kingdom.
Phone: +44 (0) 1522 500500
Fax: +44 (0) 1522 500550
Web: http://www.dynexsemi.com
CUSTOMER SERVICE
Phone: +44 (0) 1522 502753 / 502901
Fax: +44 (0) 1522 500020
e-mail: power_solutions@dynexsemi.com
Dynex Semiconductor Ltd. Technical Documentation – Not for resale.