LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Rating 3 Symbol 2222 2222A Unit Collector-Emitter Voltage V CEO 30 40 Vdc Collector-Base Voltage V CBO 60 75 Vdc Emitter-Base Voltage V 5.0 6.0 Vdc 600 600 mAdc Collector Current -- Continuous EBO IC 1 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW RJA PD 1.8 556 300 mW/C C/W mW RJA 2.4 417 mW/C C/W TJ , Tstg -55 to +150 C Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P; ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 30 -- Vdc 40 -- 60 -- Vdc 75 5.0 6.0 -- -- -- 10 Vdc -- -- -- -- 0.01 0.01 10 10 I EBO -- 100 nAdc I BL -- 20 nAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage MMBT2222 (I C = 10 mAdc, I B = 0) MMBT2222A Collector-Base Breakdown Voltage MMBT2222 (I C = 10 Adc, I E = 0) MMBT2222A Emitter-Base Breakdown Voltage MMBT2222 (I E = 10 Adc, I C = 0) MMBT2222A Collector Cutoff Current MMBT2222A ( V CE = 60 Vdc, I EB(off) = 3.0Vdc) Collector Cutoff Current (V CB = 50 Vdc, I E = 0) MMBT2222 (V CB = 60 Vdc, I E = 0) MMBT2222A (V CB = 50 Vdc, I E = 0, T A = 125C) MMBT2222 (V CB = 60 Vdc, I E = 0, T A = 125C) MMBT2222A Emitter Cutoff Current (V EB = 3.0 Vdc, I C = 0) MMBT2222A Base Cutoff Current (V CE = 60 Vdc, V EB(off) = 3.0 Vdc) MMBT2222A 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CBO V (BR)EBO I CEX nAdc Adc I CBO O4-1/5 LESHAN RADIO COMPANY, LTD. MMBT2222LT1 MMBT2222ALT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max 35 50 75 35 100 50 30 40 -- -- -- -- 300 -- -- -- -- -- -- -- 0.4 0.3 1.6 1.0 MMBT2222 MMBT2222A MMBT2222 -- 0.6 -- 1.3 1.2 2.6 MMBT2222A -- 2.0 Unit ON CHARACTERISTICS DC Current Gain (I C = 0.1 mAdc, V CE = 10 Vdc) (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc,T A= -55C ) (I C = 150 mAdc, V CE = 10 Vdc) (3) (I C = 150 mAdc, V CE = 1.0 Vdc) (3) (I C = 500 mAdc, V CE = 10 Vdc)(3) Collector-Emitter Saturation Voltage(3) (I C = 150 mAdc, I B = 15 mAdc) (I C = 500mAdc, I B = 50 mAdc) Base-Emitter Saturation Voltage (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) hFE MMBT2222A only MMBT2222 MMBT2222A -- VCE(sat) MMBT2222 MMBT2222A MMBT2222 MMBT2222A Vdc V BE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(4) (I C = 20mAdc, V CE= 20Vdc, f = 100MHz) Output Capacitance(V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Voltage Feedback Ratio(V CE=10 Vdc, I C= 1.0mAdc, f =1.0kHz) (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Small-Signal Current Gain(VCE=10Vdc,I C=1.0mAdc, f=1.0kHz) (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Output Admittance(V CE=10 Vdc, I C = 1.0 mAdc,f =1.0 kHz) (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Curren Base Time Comstant (V CB= 20 Vdc, I E = 20 mAdc, f = 31.8 MHz) Noise Figure(VCE=10Vdc, IC=100Adc, RS=1.0k, f =1.0kHz) MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A fT 250 300 -- -- -- 2.0 0.25 --- 50 75 5.0 25 -- -- 8.0 30 25 8.0 1.25 8.0 4.0 300 375 35 200 rb, C C NF -- -- 150 4.0 td -- 10 C obo C ibo h ie h re h fe h oe MHz pF pF k X 10 -4 -- mhos ps dB SWITCHING CHARACTERISTICS Delay Time (V CC = 30 Vdc, V EB(off) = - 0.5 Vdc Rise Time I C = 150 mAdc, I B1 = 15 mAdc) tr -- 25 ns Storage Time (V CC = 30 Vdc, I C = 150 mAdc ts -- 225 ns Fall Time I B1 = I B2 = 15 mAdc) tf -- 60 3. Pulse Test: Pulse Width <300 s, Duty Cycle <2.0%. 4.f T is defined as the frequency at which h fe extrapolates to unity. O4-2/5 LESHAN RADIO COMPANY, LTD. MMBT2222LT1 MMBT2222ALT1 SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100s, DUTY CYCLE ~ ~ 2% + 16 V 200 1.0 to 100s, DUTY CYCLE ~ ~ 2% + 16 V 200 1.0 k 1.0 k 0 0 - 2.0V C S*< 10 pF -14 V C S* < 10 pF < 20 ns <2.0 ns 1N914 - 4.0 V Scope rise time < 4.0ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn-On Time Figure 2. Turn-Off Time 1000 h FE , DC CURRENT GAIN 700 500 V CE= 10 V V CE=1.0 V T J = +125C 300 200 +25C 100 70 -55C 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 700 1.0k I C , COLLECTOR CURRENT (mA) V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 T J = 25C 0.8 0.6 I C=1.0 mA 0.4 500mA 100mA 10 mA 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 I B , BASE CURRENT (mA) Figure 4. Collector Saturation Region O4-3/5 LESHAN RADIO COMPANY, LTD. MMBT2222LT1 MMBT2222ALT1 200 100 70 70 t r @V CC= 30V t d@V EB(off) = 2.0V t d@V EB(off) =0 30 20 10 7.0 5.0 t 's= t s-1/8 t f 30 tf 20 10 7.0 3.0 2.0 5.0 5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 30 50 70 100 200 300 I C , COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Turn - Off Time 500 10 R S = OPTIMUM I C = 1.0 mA, R S = 150 8 8 NF, NOISE FIGURE (dB) I C = 500 A, R S = 200 I C = 100 A, R S = 2.0 k I C = 50 A, R S = 4.0 k 6 f = 1.0 kHz RS = SOURCE RS = RESISTANCE 4 2 0 0.01 0.02 0.2 0.5 1.0 2.0 5.0 10 20 50 100 6 4 2 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k f , FREQUENCY (kHz) R S, SOURCE RESISTANCE (k) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 30 20 C eb 10 7.0 5.0 C cb 3.0 2.0 0.1 I C=50 A 100 A 500 A 1.0 mA 0 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 f T ,CURRENT- GAIN BANDWIDTH PRODUCT (MHz) NF, NOISE FIGURE (dB) 20 I C , COLLECTOR CURRENT (mA) 10 CAPACITANCE (pF) V CC= 30V I C/ I B= 10 I B1 = I B2 TJ= 25C 50 t , RISE TIME (ns) 50 t , TIME (ns) 100 I C /I B = 10 TJ= 25C 500 V CE = 20 V T J = 25C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 210 20 30 50 70 100 REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 9. Capacitance Figure 10. Current- Gain Bandwidth Product O4-4/5 LESHAN RADIO COMPANY, LTD. MMBT2222LT1 MMBT2222ALT1 10 +0.5 T J = 25C 0 V BE(sat) @ I C /I B =10 COEFFICIENT (mV/ C) V, VOLTAGE ( VOLTS ) 0.8 1.0 V 0.6 V BE(on) @ V CE =10 V 0.4 0.2 R VC for V CE(sat) - 0.5 -1.0 -1.5 R VB for V BE -2.0 V CE(sat) @ I C /I B =10 0 - 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 11. "On" Voltages Figure 12. Temperature Coefficients 500 O4-5/5