LESHAN RADIO COMPANY, LTD.
O4–1/5
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol 2222 2222A Unit
Collector–Emitter V oltage V CEO 30 40 Vdc
Collector–Base V oltage V CBO 60 75 Vdc
Emitter–Base V oltage V EBO 5.0 6.0 Vdc
Collector Current — Continuous I C600 600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) PD225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient RθJA 5 5 6 °C/W
Total Device Dissipation PD300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ , Tstg –55 to +150 °C
DEVICE MARKING
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P;
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage MMBT2222 V (BR)CEO 30 — Vdc
(I C = 10 mAdc, I B = 0) MMBT2222A 40 ––
Collector–Base Breakdown V oltage MMBT2222 V (BR)CBO 60 — Vdc
(I C = 10 µAdc, I E = 0) MMBT2222A 75
Emitter–Base Breakdown V oltage MMBT2222 V (BR)EBO 5.0 — Vdc
(I E = 10 µAdc, I C = 0) MMBT2222A 6.0 ––
Collector Cutoff Current MMBT2222A I CEX — 10 nAdc
( V CE = 60 Vdc, I EB(off) = 3.0Vdc)
Collector Cutoff Current I CBO µAdc
(V CB = 50 Vdc, I E = 0) MMBT2222 –– 0.01
(V CB = 60 Vdc, I E = 0) MMBT2222A –– 0.01
(V CB = 50 Vdc, I E = 0, T A = 125°C) MMBT2222 –– 10
(V CB = 60 Vdc, I E = 0, T A = 125°C) MMBT2222A –– 10
Emitter Cutoff Current
(V EB = 3.0 Vdc, I C = 0) MMBT2222A I EBO — 100 nAdc
Base Cutoff Current
(V CE = 60 Vdc, V EB(off) = 3.0 Vdc) MMBT2222A I BL — 20 nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1
3
2
MMBT2222LT1
MMBT2222ALT1
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
2
EMITTER
3
COLLECTOR
1
BASE
LESHAN RADIO COMPANY, LTD.
O4–2/5
MMBT2222LT1 MMBT2222ALT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Mi n Max Unit
ON CHARACTERISTICS
DC Current Gain hFE ––
(I C = 0.1 mAdc, V CE = 10 Vdc) 35 ––
(I C = 1.0 mAdc, V CE = 10 Vdc) 50 ––
(I C = 10 mAdc, V CE = 10 Vdc) 75 —
(I
C
= 10 mAdc, V
CE
= 10 Vdc,T
A
= –55°C )
MMBT2222A only 35 —
(I C = 150 mAdc, V CE = 10 Vdc) (3) 100 300
(I C = 150 mAdc, V CE = 1.0 Vdc) (3) 50 ––
(I C = 500 mAdc, V CE = 10 Vdc)(3) MMBT2222 30 ––
MMBT2222A 40 —
Collector–Emitter Saturation V oltage(3) VCE(sat) Vdc
(I C = 150 mAdc, I B = 15 mAdc) MMBT2222 –– 0.4
MMBT2222A –– 0.3
(I C = 500mAdc, I B = 50 mAdc) MMBT2222 –– 1.6
MMBT2222A –– 1.0
Base–Emitter Saturation V oltage V BE(sat) Vdc
(I C = 150 mAdc, I B = 15 mAdc) MMBT2222 –– 1.3
MMBT2222A 0.6 1.2
(I C = 500 mAdc, I B = 50 mAdc) MMBT2222 –– 2.6
MMBT2222A –– 2.0
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(4) MMBT2222 f T250 –– MHz
(I C = 20mAdc, V CE= 20Vdc, f = 100MHz) MMBT2222A 300 ––
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C obo –– 8.0 pF
Input Capacitance MMBT2222 C ibo –– 30 pF
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) MMBT2222A –– 25
Input Impedance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
MMBT2222A h ie 2.0 8.0 kΩ
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) MMBT2222A 0.25 1.25
Voltage Feedback Ratio
(V
CE
=10 Vdc, I
C
= 1.0mAdc, f =1.0kHz)
MMBT2222A h re –- 8.0 X 10 –4
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) MMBT2222A — 4.0
Small–Signal Current Gain(V
CE
=10Vdc,I
C
=1.0mAdc, f=1.0kHz)
MMBT2222A h fe 50 300 —
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) MMBT2222A 75 37 5
Output Admittance
(V
CE
=10 Vdc, I
C
= 1.0 mAdc,f =1.0 kHz)
MMBT2222A h oe 5.0 35 µmhos
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) MMBT2222A 25 200
Curren Base Time Comstant
(V CB= 20 Vdc, I E = 20 mAdc, f = 31.8 MHz) MMBT2222A rb, C C–– 150 ps
Noise Figure
(V
CE
=10Vdc, I
C
=100µAdc, R
S
=1.0kΩ, f =1.0kHz)
MMBT2222A NF –– 4.0 dB
SWITCHING CHARACTERISTICS
Delay T ime (V CC = 30 Vdc, V EB(off) = – 0.5 Vdc t d—10
Rise T ime I C = 150 mAdc, I B1 = 15 mAdc) t r—25ns
Storage T ime (V CC = 30 Vdc, I C = 150 mAdc t s— 225 ns
Fall T ime I B1 = I B2 = 15 mAdc) t f—60
3. Pulse Test: Pulse Width
<
300 µs, Duty Cycle
<
2.0%.
4.f T is defined as the frequency at which h fe extrapolates to unity.
LESHAN RADIO COMPANY, LTD.
O4–3/5
MMBT2222LT1 MMBT2222ALT1
Figure 1. Turn–On Time
Scope rise time < 4.0ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
1.0 k
+30 V
200
C S*< 10 pF
1.0 k
+30 V
200
C S* < 10 pF 1N914
+ 16 V
–14 V < 20 ns
<2.0 ns
– 2.0V
+ 16 V
Figure 2. Turn–Off Time
1.0 to 100µs,
DUTY CYCLE
~
2%
SWITCHING TIME EQUIVALENT TEST CIRCUITS
00
1.0 to 100µs,
DUTY CYCLE
~
2%
– 4.0 V
I C , COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
I B , BASE CURRENT (mA)
Figure 4. Collector Saturation Region
h FE , DC CURRENT GAINV CE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 700 1.0k
1000
700
500
300
200
100
70
50
30
20
10
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
1.0
0.8
0.6
0.4
0.2
0
V CE= 10 V
V CE=1.0 V T J = +125°C
+25°C
–55°C
T J = 25°C
500mA
100mA
10 mA
I C=1.0 mA
~~
LESHAN RADIO COMPANY, LTD.
O4–4/5
MMBT2222LT1 MMBT2222ALT1
t , TIME (ns)
t , RISE TIME (ns)
V
CC
= 30V
I
C
/ I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t r @V CC= 30V
t d@V EB(off) = 2.0V
t d@V EB(off) =0
I
C
/I
B
= 10
T
J
= 25°C
5.0 7.0 10 20 30 50 70 100 200 300 500
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
100
70
50
30
20
10
7.0
5.0
t
’
s
= t
s
–1/8 t
f
t
f
I C , COLLECTOR CURRENT (mA)
Figure 6. Turn - Off Time
I C , COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
NF, NOISE FIGURE (dB)
R S, SOURCE RESISTANCE (kΩ)
Figure 8. Source Resistance Effects
NF, NOISE FIGURE (dB)
f = 1.0 kHz
0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
10
8
6
4
2
050 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
f , FREQUENCY (kHz)
Figure 7. Frequency Effects
I C=50 µA
100 µA
500 µA
1.0 mA
I
C
= 1.0 mA, R
S
= 150 Ω
I
C
= 500 µA, R
S
= 200 Ω
I
C
= 100 µA, R
S
= 2.0 kΩ
I
C
= 50 µA, R
S
= 4.0 kΩ
R
S
= OPTIMUM
RS = SOURCE
RS = RESISTANCE
10
8
6
4
2
0
I C , COLLECTOR CURRENT (mA)
Figure 10. Current– Gain Bandwidth Product
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitance
V CE = 20 V
T J = 25°C
C
eb
C
cb
1.0 2.0 3.0 5.0 7.0 210 20 30 50 70 100
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
30
20
10
7.0
5.0
3.0
2.0
500
300
200
100
70
50
f
T
,CURRENT– GAIN BANDWIDTH PRODUCT (MHz)
CAPACITANCE (pF)
5.0 7.0 10 20 30 50 70 100 200 300 500
LESHAN RADIO COMPANY, LTD.
O4–5/5
MMBT2222LT1 MMBT2222ALT1
I C , COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
I C , COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
V, VOLTAGE ( VOLTS )
COEFFICIENT (mV/ °C)
T J = 25°C
R θVC for V CE(sat)
V
BE(sat)
@ I
C
/I
B
=10
V
CE(sat)
@ I
C
/I
B
=10
V
BE(on)
@ V
CE
=10 V
R θVB for V BE
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k
10
0.8
0.6
0.4
0.2
0
+0.5
0
– 0.5
–1.0
–1.5
–2.0
– 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
1.0 V
