CPH5831
No.8220-1/6
Features
•DC / DC converters.
•Composite type with a N-Channel Silicon MOSFET (MCH3406) and a Schottky Barrier Diode (SBS010M) contained
in one package facilitating high-density mounting.
•[MOS]
• Low ON-resistance.
• Ultrahigh-speed switching.
• 1.8V drive.
•[SBD]
• Short reverse recovery time.
• Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
[MOSFET]
Drain-to-Source Voltage VDSS 20 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID3A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 12 A
Allowable Power Dissipation PD
Mounted on a ceramic board (600mm
2
✕0.8mm) 1unit
0.9 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +125 °C
[SBD]
Repetitive Peak Reverse Voltage VRRM 15 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 15 V
Average Output Current IO2A
Surge Forward Current IFSM 50Hz sine wave, 1cycle 10 A
Junction Temperature Tj --55 to +125 °C
Storage Temperature Tstg --55 to +125 °C
Marking : XH
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8220
GI IM
12805PE TS IM TB-100797
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
CPH5831 MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
CPH5831
No.8220-2/6
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
[MOSFET]
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 20 V
Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0 1 µA
Gate-to-Source Leakage Current IGSS VGS= ±8V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward T ransfer Admittance yfsVDS=10V, ID=1.5A 3.36 5.6 S
RDS(on)1 ID=1.5A, VGS=4V 48 63 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=1A, VGS=2.5V 58 82 mΩ
RDS(on)3 ID=0.5A, VGS=1.8V 72 110 mΩ
Input Capacitance Ciss VDS=10V, f=1MHz 280 pF
Output Capacitance Coss VDS=10V, f=1MHz 60 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 38 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 13 ns
Rise T ime trSee specified Test Circuit. 35 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 35 ns
Fall T ime tfSee specified Test Circuit. 25 ns
Total Gate Charge Qg VDS=10V, VGS=4V, ID=3A 8.8 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=3A 0.85 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=3A 0.85 nC
Diode Forward Voltage VSD IS=3A, VGS=0 0.82 1.2 V
[SBD]
Reverse Voltage VRIR=1.5mA 15 V
Forward Voltage VF1I
F=0.5A 0.27 0.32 V
VF2I
F=1A 0.30 0.35 V
Reverse Current IRVR=6V 600 µA
Interterminal Capacitance C VR=10V, f=1MHz cycle 65 pF
Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 15 ns
Thermal Resistance Rth(j-a)
Mounted on a ceramic board (600mm
2
✕0.8mm)
138 °C / W
Package Dimensions Electrical Connection
unit : mm
2171
543
12
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Top view
1.6 0.60.6 2.8
0.2
2.9
0.05
0.40.95
0.2
0.9
0.7
0.15
0.4
12
345
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
CPH5831
No.8220-3/6
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=1.5A
RL=6.67Ω
VDD=10V
VOUT
CPH5831
VIN
4V
0V
VIN
Switching Time Test Circuit trr Test Circuit
[MOSFET] [SBD]
Duty≤10%
50Ω100Ω10Ω
--5V
trr
100mA100mA
10mA
10µs
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
160
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
--60 --40 --20 0 20 40 60 80 100 120 140 160
IT03492
0.5
1.0
1.5
2.0
2.5
3.0
00 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
IT03490 IT03491
IT03493
ID=0.5A, VGS=1.8V
ID=1.0A, VGS=2.5V
ID=1.5A, VGS=4.0V
VGS=1.0V
10.0V
--25°C
Ta=75°C
0246810
ID=0.5A
1.5A
Ta=25°C
4.0V
2.5V
1.8V
1.5V
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VDS=10V
25
°
C
1.0A
RDS(on) -- VGS
ID -- VDS ID -- VGS
RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
[MOSFET]
[MOSFET] [MOSFET]
[MOSFET]
CPH5831
No.8220-4/6
0.01
2
2
3
5
7
10
1.0
2
3
5
7
0.1
3
5
7
2
3
23 57
1.0 10
23 57
0.1
23 57
0.01 23 57
IDP=12A
ID=3A
Operation in this
area is limited by RDS(on).
100ms
DC operation
1ms
10ms
<10µs
100µs
0.2
0.4
0.6
0.8
0.9
1.0
00 20 40 60 80 100 120 140 160
IT09178
012345678910
0.1 23 57
1.0 23 57
10
1.0
10
100
7
5
3
2
3
2
7
5
3
2
IT03498 IT09179
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
VDD=10V
VGS=4V
td(on)
td(off)
tr
IT03496
IT03494
0.1 23 57
1.00.01 23 57 23 57
10
0.1
1.0
10
7
5
3
2
3
2
7
5
3
2
VDS=10V
75°C
Ta= --25°C
IT03495
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
02468101214161820
0.1
1.0
7
5
3
2
10
7
5
3
2
0.01
7
5
3
2
VGS=0
--25°C
25
°
C
Ta=75
°
C
IT03497
10
100
2
7
5
3
1000
2
7
5
3
Ciss
Coss
Crss
f=1MHz
VDS=10V
ID=3A
25
°
C
tf
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm
2
✕0.8mm) 1unit
Mounted on a ceramic board (600mm
2
✕0.8mm) 1unit
SW Time -- IDCiss, Coss, Crss -- VDS
yfs -- IDIF -- VSD
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain Current, ID -- A
Forward T ransfer Admittance,
y
fs -- S
Diode Forward Voltage, VSD -- V
Forward Current, IF -- A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
VGS -- Qg
PD -- Ta
A S O
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET] [MOSFET]
[MOSFET]
[MOSFET]
CPH5831
No.8220-5/6
[SBD]
70.01 23 7
0.1
052 237
1.0
5
12
10
8
6
4
2
3
Time, t -- s
Surge Forward Current, IFSM(Peak) -- A
IT00626
IFSM -- t
IS
20ms
t
Current waveform 50Hz sine wave
Reverse Voltage, VR -- V
C -- VR
Interterminal Capacitance, C -- pF
[SBD] [SBD]
1.0 10
2
2
3
5
100
1000
1.0
10
7
2
3
5
7
2
3
5
7
357 2
f=1MHz
IT00625
0
00.5 1.0
1.0
0.8
0.9
0.7
0.6
0.4
0.3
0.2
0.1
0.5
1.5 2.5 3.02.0
IT08545
(2) (3)(4)
(1)
PF(AV) -- IO
Average Forward Current, IO -- A
Average Forward Power Dissipation, PF(AV) -- W
180°
360°
θ
360°
(1)Rectangular wav
e θ
=60
°
(2)Rectangular wav
e θ
=120
°
(3)Rectangular wav
e θ
=180
°
(4)Sine wav
e θ
=180
°
Sine
wave
Rectangular
wave
Reverse Voltage, VR -- V
IR -- VR
Reverse Current, IR -- A
Forward Voltage, VF -- V
Forward Current, IF -- mA
IF -- VF
[SBD] [SBD]
0
0.1
0.01
0.001
0.0001
0.00001
5
7
3
2
5
7
3
2
5
7
3
2
5
7
3
2
612164101428
0
0.1
0.01 0.3 0.4 0.50.1 0.2
1.0
10
7
5
3
2
7
5
3
2
7
5
3
2
Ta=125°C
25
°
C
50°C
75
°
C
100°C
Ta=100°C
75°C
50°C
25°C
IT05881 IT05904
CPH5831
No.8220-6/6
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2005. Specifications and information herein are subject
to change without notice.
PS
Note on usage : Since the CPH5831 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
