2N7002BKMB - NXP - Datasheet.Live

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

1.2 Features and benefits

Very fast switching

Trench MOSFET technology

ESD protection up to 2 kV

Logic-level compatible

Ultra thin package profile with

0.37 mm height

1.3 Applications

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.

2N7002BKMB

60 V, single N-channel Trench MOSFET

Rev. 1 — 11 May 2012 Product data sheet

SOT883B

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj=25°C --60V

VGS gate-source voltage -20 - 20 V

IDdrain current VGS =10V; T

amb =25°C [1] - - 450 mA

Static characteristics

RDSon drain-source on-state

resistance VGS =10V; I

D=450mA; T

j=25°C - 1 1.6 Ω

Product data sheet Rev. 1 — 11 May 2012 2 of 15

NXP Semiconductors 2N7002BKMB

60 V, single N-channel Trench MOSFET

2. Pinning information

3. Ordering information

4. Marking

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic sym bol

1 G gate

SOT883B (DFN1006B-3)

2Ssource

3 D drain

Transparent

top view

017aaa255

Table 3. Ordering informatio n

Type number Package

Name Description Version

2N7002BKMB DFN1006B-3 Leadless ultra small plastic package; 3 solder lands;

body 1.0 × 0.6 × 0.37 mm SOT883B

Table 4. Marking codes

Type number Marking code

2N7002BKMB 0000 0001

Fig 1. DFN1006B-3 (SOT883B) binary marking code description

MARKING CODE

(EXAMPLE)

PIN 1 INDICATION READING DIRECTION

READING DIRECTION

READING EXAMPLE:

0111

1011

006aac673

Product data sheet Rev. 1 — 11 May 2012 3 of 15

NXP Semiconductors 2N7002BKMB

60 V, single N-channel Trench MOSFET

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Measured between all pins.

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj=25°C - 60 V

VGS gate-source voltage -20 20 V

IDdrain current VGS =10V; T

amb =25°C [1] - 450 mA

VGS =10V; T

amb = 100 °C [1] - 220 mA

IDM peak drain current Tamb = 25 °C; single pulse; tp≤10 µs - 1.8 A

Ptot total power dissipation Tamb =25°C [2] - 360 mW

[1] - 715 mW

Tsp = 25 °C - 2700 mW

Tjjunction temperature -55 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Source-drain diode

ISsource current Tamb =25°C [1] - 450 mA

ESD maximum rating

VESD electrostatic discharge voltage HBM [3] - 2000 V

Fig 2. Normalized total power dissipation as a

function of junction temp era tu re Fig 3. Normalized continuous drain current as a

function of junction temp erat ure

Tj (°C)

-75 17512525 75-25

001aao121

120

Pder

(%)

Tj (°C)

-75 17512525 75-25

001aao122

120

Ider

(%)

Product data sheet Rev. 1 — 11 May 2012 4 of 15

NXP Semiconductors 2N7002BKMB

60 V, single N-channel Trench MOSFET

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

IDM is single pulse

(1) tp = 1 ms

(2) DC; Tsp = 25 °C

(3) tp = 10 ms

(4) tp = 100 ms

(5) DC; Tamb = 25 °C; drain mounting pad 1 cm2

Fig 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source

voltage

aaa-002590

(A)

10-2

VDS (V)

10-1 102

101

10-1

limit RDSon = VDS / ID

(1)

(4)

(5)

(3)

(2)

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance

from junction to

ambient

in free air [1] - 305 350 K/W

[2] - 150 175 K/W

Rth(j-sp) thermal resistance

from junction to solder

point

--40K/W

Product data sheet Rev. 1 — 11 May 2012 5 of 15

NXP Semiconductors 2N7002BKMB

60 V, single N-channel Trench MOSFET

FR4 PCB, standard footprint

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

FR4 PCB, mounting pad for drain 1 cm2

Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

017aaa109

(s)

−3

10110

−2

−1

th(j-a)

(K/W)

duty cycle = 1

0.75

0.5 0.33

0.25 0.2

0.05

0.02

0.01

0.1

017aaa110

(s)

−3

10110

−2

−1

th(j-a)

(K/W)

duty cycle = 1

0.75

0.5 0.33

0.25 0.2

0.1

0.02

0.01

0.05

Product data sheet Rev. 1 — 11 May 2012 6 of 15

NXP Semiconductors 2N7002BKMB

60 V, single N-channel Trench MOSFET

7. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source

breakdown voltage ID=10µA; V

GS =0V; T

j=25°C 60--V

VGSth gate-source threshold

voltage ID=250µA; V

DS =V

GS; Tj= 25 °C 1.1 1.6 2.1 V

IDSS drain leakage current VDS =60V; V

GS =0V; T

j=25°C --1µA

VDS =60V; V

GS =0V; T

j=150°C --10µA

IGSS gate leakage current VGS =-20V; V

DS =0V; T

j=25°C --10µA

VGS =20V; V

DS =0V; T

j=25°C --10µA

RDSon drain-source on-state

resistance VGS =10V; I

D=450mA; T

j=25°C - 1 1.6 Ω

VGS =10V; I

D=450A; T

j=150°C - 2.2 3.5 Ω

VGS =5V; I

D=50mA; T

j=25°C - 1.3 2 Ω

gfs forward

transconductance VDS =10V; I

D= 200 mA; Tj= 25 °C - 550 - mS

Dynamic characteristics

QG(tot) total gate charge VDS =30V; I

D= 300 mA; VGS =4.5V;

Tj=25°C -0.50.6nC

QGS gate-source charge - 0.2 - nC

QGD gate-drain charge - 0.1 - nC

Ciss input capacitance VDS =10V; f=1MHz; V

GS =0V;

Tj=25°C - 3350pF

Coss output capacitance - 7 - pF

Crss reverse transfer

capacitance -4-pF

td(on) turn-on delay time VDS =50V; R

L= 250 Ω; VGS =10V;

RG(ext) =6Ω; Tj=25°C - 5 10 ns

trrise time - 6 - ns

td(off) turn-off delay time - 12 24 ns

tffall time -7-ns

Source-drain diode

VSD source-drain voltage IS=115mA; V

GS =0V; T

j= 25 °C 0.47 0.75 1.1 V

Product data sheet Rev. 1 — 11 May 2012 7 of 15

NXP Semiconductors 2N7002BKMB

60 V, single N-channel Trench MOSFET

Tj = 25 °C Tj = 25 °C; VDS = 5 V

(1) minimum values

(2) typical values

(3) maximum values

Fig 7. Output characteristic s: drain current as a

function of drain-source voltage; typical values Fig 8. Subthreshold drain current as a function of

gate-source voltage

Tj = 25 °C

(1) VGS = 3.25 V

(2) VGS = 3.5 V

(3) VGS = 4 V

(4) VGS = 5 V

(5) VGS = 10 V

ID = 500 mA

(1) Tj = 150 °C

(2) Tj = 25 °C

Fig 9. Drain-source on-state resistance as a function

of drain current; typical values Fig 10. Drain-source on-state resistance as a function

of gate-source voltage; typical values

VDS (V)

0.0 4.03.01.0 2.0

017aaa039

0.4

0.5

0.3

0.2

0.1

0.6

0.7

(A)

0.0

3.5 V

VGS = 4.0 V

3.0 V

2.75 V

2.5 V

3.25 V

017aaa040

(V)

0.0 3.02.01.0

−4

−5

−3

(A)

−6

(2)(1) (3)

ID (A)

0.0 1.00.80.4 0.60.2

017aaa041

2.0

4.0

6.0

RDSon

(Ω)

0.0

(1)

(2)

(3)

(4)

(5)

VGS (V)

0.0 10.08.04.0 6.02.0

017aaa042

2.0

4.0

6.0

RDSon

(Ω)

0.0

(1)

(2)

Product data sheet Rev. 1 — 11 May 2012 8 of 15

NXP Semiconductors 2N7002BKMB

60 V, single N-channel Trench MOSFET

VDS > ID × RDSon

(1) Tj = 25 °C

(2) Tj = 150 °C

Fig 11. Transfer characteristics: drain current as a

function of gate-source voltage; typical values Fig 12. Normalized drain-source on-state resistance as

a function of junctio n temperature; typical

values

ID = 0.25 A; VDS = VGS

(1) maximum values

(2) typical values

(3) minimum values

f = 1 MHz; VGS = 0 V

(1) Ciss

(2) Coss

(3) Crss

Fig 13. Gate-source threshold voltage as a function of

junction temperature Fig 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

VGS (V)

0.0 5.04.02.0 3.01.0

017aaa043

0.4

0.6

0.2

0.8

1.0

(A)

0.0

(1) (2)

Tj (°C)

-60 180120060

aaa-002591

1.2

0.6

1.8

2.4

0.0

Tj (°C)

-60 180120060

aaa-002592

1.0

2.0

3.0

VGS(th)

(V)

0.0

(2)

(1)

(3)

017aaa046

VDS (V)

10−1102

101

102

(pF)

(2)

(1)

(3)

Product data sheet Rev. 1 — 11 May 2012 9 of 15

NXP Semiconductors 2N7002BKMB

60 V, single N-channel Trench MOSFET

ID = 300 mA; VDS = 30 V; Tj = 25 °C

Fig 15. Gate-source voltag e as a function of gate

charge; typical values Fig 16. Gate charge waveform definitions

VGS = 0 V

(1) Tj = 150 °C

(2) Tj = 25 °C

Fig 17. Source current as a functio n of so urce-drain voltage; typical values

QG (nC)

0.0 0.80.60.2 0.4

017aaa047

2.0

3.0

1.0

4.0

5.0

VGS

(V)

0.0

003aaa508

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

VSD (V)

0.0 1.20.80.4

017aaa048

0.4

0.8

1.2

(A)

0.0

(1) (2)

Product data sheet Rev. 1 — 11 May 2012 10 of 15

NXP Semiconductors 2N7002BKMB

60 V, single N-channel Trench MOSFET

8. Test information

9. Package outline

Fig 18. Duty cycle definition

006aaa812

duty cycle δ =

Fig 19. Package outline SOT883B (DFN1006B-3)

11-11-02Dimensions in mm

0.55

0.47

0.30

0.22

0.40

0.34

0.30

0.22

0.20

0.12

0.65

0.04 max

0.35

0.65

0.55

1.05

0.95

Product data sheet Rev. 1 — 11 May 2012 11 of 15

NXP Semiconductors 2N7002BKMB

60 V, single N-channel Trench MOSFET

10. Soldering

Fig 20. Reflow soldering footprint for SOT883B (DFN1006B-3)

1.3

0.3

0.6 0.7

0.4

0.9

0.3

(2x)

0.4

(2x)

0.25

(2x)

R0.05 (8x)

0.7

Footprint information for reflow soldering SOT883B

sot883b_fr

occupied area

solder land

solder resist

solder land plus solder paste

solder paste deposit

Dimensions in mm

Product data sheet Rev. 1 — 11 May 2012 12 of 15

NXP Semiconductors 2N7002BKMB

60 V, single N-channel Trench MOSFET

11. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

2N7002BKMB v.1 20120511 Product data sheet - -

Product data sheet Rev. 1 — 11 May 2012 13 of 15

NXP Semiconductors 2N7002BKMB

60 V, single N-channel Trench MOSFET

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this doc ument may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URLhttp://www.nxp.com.

12.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modificati ons or additions.

NXP Semiconductors does not give any representat ions or warranties as to

the accuracy or completeness of informati on included herein and shall have

no liability for the consequences of use of such info rmation.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or comple teness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short dat a sheet, the

full data sheet shall pre vail.

Product specifica t ion — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this d ocument is be lieved to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an inf ormation

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconduct ors’ aggregate and cumulat ive liability toward s

customer for the products described herein shall be limited in accordance

with theTerms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersed es an d r eplaces all inf ormation supplied pri or

to the publication hereof.

Suitability for use — NXP Semiconductors product s are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors pro duct can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications and ther efore such inclu sion and/or use is at the cu stomer’s own

risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with t heir

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessa ry

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Document status[1] [2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 11 May 2012 14 of 15

NXP Semiconductors 2N7002BKMB

60 V, single N-channel Trench MOSFET

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published athttp://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document ma y be interpret ed or

construed as an of fer to sell product s that is op en for accept ance or the grant ,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) d escribed herein may

be subject to export control regulat i ons. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It i s neit her qua lified nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applicati ons.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed produ ct cl aims resulting from custome r design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

12.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G

reenChip,HiPerSmart,HITAG,I²C-bus

logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE

Ultralight,MoReUse,QLPAK,Silicon

Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia

andUCODE — are trademarks of NXP B.V.

HD Radio andHD Radio logo — are trademarks of iBiquity Digital

Corporation.

13. Contact information

For more information, please visit:http://www.nxp.com

For sales office addresses, please send an email to:salesaddresses@nxp.com

NXP Semiconductors 2N7002BKMB

60 V, single N-channel Trench MOSFET

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 11 May 2012

Document identifier: 2N7002BKMB

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . .10

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14

13 Contact information. . . . . . . . . . . . . . . . . . . . . .14