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Preliminary
Data Sheet
NE85633 / 2SC3356
NPN Silicon RF Transistor
NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
FEATURES
Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
ORDERING INFORMATION
mroF gniylppuS ytitnauQ egakcaP rebmuN redrO rebmuN traP
gnipat dessobme ediw mm 8 )leer noN( scp 05
NE85633-T1B NE85633-T1B-A
2SC3356-T1B 2SC3356-T1B-A
3-pin Minimold
(Pb-Free)
3 kpcs/reel Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
I tnerruC rotcelloC C 100 mA
Total Power Dissipation Ptot Note 200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg 65 to +150 °C
Note Free air
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0021EJ0300
Rev.3.00
Jun 28, 2011
<R>
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NE85633 NE85633-A
2SC3356 2SC3356-A
JEITA
Part No.
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ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
scitsiretcarahC CD
Collector Cut-off Current ICBO VCB = 10 V, IE 0.1 0 =
μ
A
Emitter Cut-off Current IEBO VEB = 1.0 V, IC 0.1 0 =
μ
A
h niaG tnerruC CD FE Note 1 VCE = 10 V, IC = 20 mA 50 120 250
scitsiretcarahC FR
Gain Bandwidth Product fT VCE = 10 V, IC = 20 mA 7 GHz
Insertion Power Gain S21e2 VCE = 10 V, IC = 20 mA, f = 1 GHz 11.5 dB
V FN erugiF esioN CE = 10 V, IC = 7 mA, f = 1 GHz 1.1 2.0 dB
Reverse Transfer Capacitance Cre Note 2 VCB = 10 V, IE = 0, f = 1 MHz 0.55 1.0 pF
Notes 1. Pulse measurement: PW 350
μ
s, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank Q/YQ R/YR S/YS
Marking R23 R24 R25
hFE Value 50 to 100 80 to 160 125 to 250
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TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
50
100
10
20
1 5 10 055.0
V
CE
= 10 V
250
200
150
100
50
025 50 75 100 125 150
Total Power Dissipation P
tot
(mW)
Ambient Temperature T
A
(˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free air
Reverse Transfer Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
1
0.5
0.3 0.50.2 1 2 5 10 3020
f = 1 MHz
V
CE
= 10 V
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
2
5
0.2
0.5
1
0.1 1 5 10 50 0015.01.0
V
CE
= 10 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
15
10
0
5
0.5 1 10 50 075
V
CE
= 10 V
I
C
= 20 mA
Frequency f (GHz)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
25
15
20
5
10
0
0.05 0.1 0.5 1 22.0
MAG
|S
21e
|
2
Remark The graphs indicate nominal characteristics.
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7
0
1
2
3
4
5
6
0.5 1 5 10 50 70
Collector Current IC (mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
Noise Figure NF (dB)
VCE = 10 V
f = 1 GHz
5
4
3
2
1
0
15
3
6
9
12
0
2 4 6 8 10
Collector to Emitter Voltage VCE (V)
NOISE FIGURE, INSERTION POWER GAIN
vs. COLLECTOR TO EMITTER VOLTAGE
Noise Figure NF (dB)
Insertion Power Gain |S21e|2 (dB)
f = 1 GHz
IC = 20 mA
|S21e|2
NF
Remark The graphs indicate nominal characteristics.
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SMITH CHART
S
21e
-FREQUENCY
CONDITION : V
CE
= 10 V, I
C
= 20 mA
90˚
30˚
–30˚
60˚
–60˚
180˚
150˚
–150˚
120˚
–120˚
–90˚
5 10 15 20
S
21e
0.2 GHz
2.0 GHz
S
12e
-FREQUENCY
CONDITION : V
CE
= 10 V, I
C
= 20 mA
90˚
30˚
–30˚
60˚
–60˚
180˚
150˚
–150˚
120˚
–120˚
–90˚
0.05 0.1 0.15 0.2 0.25
S
12e
0.2 GHz
2.0 GHz
S
11e
, S
22e
-FREQUENCY
CONDITION : V
CE
= 10 V, 200 MHz Step
60
20
30
40
50
70
80
90
100
110
120
130
140
150
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
10
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.02
0.01
0
0.49
0.48
0.47
0.46
0.45
0.44
0.43
0.42
0.41
0.40
0.39
0.38
0.37
0.36
0.35
0.34
0.33
0.32
0.31
0.30
0.29
0.28
0.27
0.26
0.25
0.24
0.23
0.28
0.30
0.32
0.34
0.36
0.38
0.40
0.42
0.44
0.46
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
0.48
0.49
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.20
0.21
0.22
0.23
0.24
0.25
0.26
0.27
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
I
N
D
E
G
R
E
E
S
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
REACTANCE COMPONENT
(
R
––––
Z
O
)
(
+JX
––––
Z
O
)
P
OS
ITIVE
R
EA
C
TA
NC
E
CO
M
P
ON
EN
T
NE
G
AT
IVE
R
E
AC
TA
N
CE
C
OM
PO
NE
NT
(
JX
––––
Z
O
)
0.8
0.7
0.6
0.3
0.2
0.1
0.4
0.5
5.0
10
50
3.0
4.0
1.8
2.0
1.2
0.1
0.9
1.4
1.6
20
2.0
50
10
6.0
4.0
3.0
1.8
1.6
1.4
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
20
0.2 GHz
2.0 GHz
2.0 GHz
0.2 GHz
I
C
= 20 mA
S
22e
S
11e
I
C
= 20 mA
I
C
= 5 mA
I
C
= 5 mA
0.2
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
0.2
1.0
0.8
0.6
0.4
1.0
0.8
0.6
0.2
0.4
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0
1.2
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S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of
the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] [Device Parameters]
URL http://www2.renesas.com/microwave/en/download.html
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PACKAGE DIMENSIONS
3-PIN MINIMOLD (UNIT: mm)
2.8±0.2
1.5
2
13
2.9±0.2
0.950.95
0.4+0.1
–0.05
0.4+0.1
–0.05
0.65+0.1
–0.15
0.16+0.1
–0.05
0.3
0 to 0.1
1.1 to 1.4
Marking
1. Emitter
2. Base
3. Collector
PIN CONNECTIONS
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All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History NE85633 / 2SC3356 Data Sheet
Description
Rev. Date
Page Summary
Jun 2004 Previous No. :PU10209EJ02V0DS
3.00 Jun 28, 2011 p.1 Modification of ORDERING INFORMATION
p.2 Modification of hFE CLASSIFICATION
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