PDE-U15-0
GENERAL-US E RE CTIFIER DIODE
U15
FEATURES OUTLINE DRAWING
• For general purpose.
• Diffused-junction. Glass passivated and
encapsulated.
ABSOLUTE MAXIMUM RATINGS
Item Type U15B U15C U15E U15G U15J
Repetitive Peak Reverse Voltage VRRM V 100 200 400 600 800
Non-Repetitive Peak Reverse Voltage VRSM V 200 300 500 800 1000
Average Forward Current IF(AV) A3.0 (Single-phase ha lf s ine wave 180° c onduction
TL = 100°C, Lead length = 10mm )
80 60
Surge(Non-Repetitive) Forward Current IFSM A(Without PIV, 10ms conduction, Tj=175°C start)
25.6 14.4
I2t Limit Value I2tA
2s(Time=2~10ms,I=RMS value)
Operating Junction Temperature Tj°C-65 ~ +175
S torage Temperature Tstg °C-65 ~ +200
Notes (1) Lead mounting : Lead temperature 300°C max. to 3.2mm from body for 5sec. max..
(2) Mechanical strength : Bending 90°×2 cycl es or 18 0°×1 cycle, Tensile 3kg, Twist 90°×1 cycle.
CHARACTERISTICS(TL=25°C)
Item Symbols Units Min. Typ. Max. Test Conditions
1.5 60 B,C class
Peak Reverse Current IRRM µA
-
0.6 10 E,G,J class Rated VRRM
Peak Forward Voltage VFM V
--
1.0 I
FM=3.0Ap, Single-phase half
sine wave 1 cycl e
Reverse Recovery Time trr µs
-
3.0
-
I
F=2mA, VR=-15V
Rth(j-a) 50
Steady State Thermal Impedance Rth(j-l) °C/W
--
20 Lead length = 10 mm
Unit in mm(inch)
Weight: 1.0 (g)
7.0MAX
(0.28)
Direction of polarity
Cathode band
28MIN.
(1.1)
62MIN. (2.44)
28MIN.
(1.1) (0.2)
(0.05)
1.2
φ
5 MAX
φ
U15B (100V) Yellow
U15C (200V) Black
U15E (400V) Blue
U15G (600V) Red
U15J (800V) Green
Type
Color of
cathode band
PDE-U15-0
U15
Forward characteristic
012345
0.1
1
10
100
PEAK FORWARD VOLTAGE DROP (V)
PEAK FORWARD CURRENT (A)
TL=175˚C
TL=25˚C
Single-phase half sine wave
Conduction : 10ms 1 Cycle
Max. average forward power dissipation
(Resistive or induct ive load)
0 1.0 2.0 3.0 4.0 5.0
0
1.0
2.0
3.0
4.0
AVERAGE FORWARD CURRENT (A)
MAX. AVERAGE FORWARD POWER DISSIPATION (W)
Single-phase
( 50Hz )
DC
Max. allowable ambient temperature
(Resistive or induct ive load)
0 1.0 2.0 3.0 4.0
0
50
100
150
200
AVERAGE FORWARD CURRENT (A)
MAX. ALLOWABLE AMBIENT TEMPERATURE (˚C)
Single-phase half sine wave
180˚ conduction (50Hz)
FIN:Cu(35 ·1t)
L L
Rth(f-a)=5.5 C/W
Lead length
L=10mm
20mm
25mm
Max. allowable lead temperature
(Resistive or induct ive load)
0 1.0 2.0 3.0 4.0
0
50
100
150
200
MAX. ALLOWABLE LEAD TEMPERATURE (˚C)
AVERAGE FORWARD CURRENT (A)
Single-phase half sine wave
180˚ conduction (50Hz)
Lead temp PC board
(100x180x1.6t)
Copper foil ( 5.5)
L
L
Lead length
L=10mm
20mm
25mm
Surge forward current characteristic
(Non-repetitive)
1 10 100
0
20
40
60
80
100
120
Without PIV
CYCLES
SURGE FORWARD CURRENT (A)
10ms
1 cycle
Surge current
peak value
With PIV
Steady state thermal impedance
0 5 10 15 20 25 30
0
20
40
60
80
100
120
STEADY STATE THERMAL IMPEDANCE (˚C/W)
LEAD LENGTH (mm)
Lead
length
Lead temp.
measured poin
(φ0.5 thermocouple)
PC board
(100×180×1.6t)
20
Lead
length
Copper foil ( 5.5)
2
15
Ambient temp. measured point
Rth(j - a)
Rth(j - l)
PDE-U15-0
U15
Transient thermal impedance
0.001 0.01 0.1 1 10 100
0.1
1
10
100
TRANSIENT THERMAL IMPEDANCE (˚C/W)
Rth(j - a)
Lead length = 10 mm
Note : PC. board mounted
PC. board( 100 × 180 × 1.6t)
Copper foil ( 5.5 )
Rth(j - l)
TIME (s)
Reverse recovery time(trr) test circuit
- 15V
22µs
50µF D.U.T
2mA
15V 600Ω
0t
0.1I
rp
I
rp
t
rr
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3. In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during op eration of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5. In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8. The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
HITACHI POWER SEMICOND UCTORS
For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
Notices
NoticesNotices
Notices
Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse
