AFT05MS031NR1 AFT05MS031GNR1
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from
136 to 520 MHz. The high gain, ruggedness and broadband performance of
these devices make them ideal for large--signal, common source amplifier
applications in mobile radio equipment.
Typical Performance: (13.6 Vdc, TA=25C, CW)
Frequency
(MHz)
Gps
(dB)
D
(%)
P1dB
(W)
136--174 (1,4) 23.2 62.0 31
380--450 (2,4) 18.3 64.1 31
450--520 (3,4) 17.7 62.0 31
520 (5) 17.7 71.4 33
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal
Type VSWR
Pin
(W)
Test
Voltage Result
155 (1) CW >65:1 at all
Phase Angles
0.55
(3 dB Overdrive)
17 No Device
Degradation
420 (2) 1.6
(3 dB Overdrive)
490 (3) 2.0
(3 dB Overdrive)
520 (5) 1.1
(3 dB Overdrive)
1. Measured in 136--174 MHz VHF broadband reference circuit.
2. Measured in 380--450 MHz UHF broadband reference circuit.
3. Measured in 450--520 MHz UHF broadband reference circuit.
4. The values shown are the minimum measured performance numbers across the
indicated frequency range.
5. Measured in 520 MHz narrowband test circuit.
Features
Characterized for Operation from 136 to 520 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band:
136--174 MHz
380--450 MHz
450--520 MHz
225C Capable Plastic Package
Exceptional Thermal Performance
High Linearity for: TETRA, SSB, LTE
Cost--effective Over--molded Plastic Packaging
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.
Typical Applications
Output Stage VHF Band Mobile Radio
Output Stage UHF Band Mobile Radio
Document Number: AFT05MS031N
Rev. 1, 4/2013
Freescale Semiconductor
Technical Data
136--520 MHz, 31 W, 13.6 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
AFT05MS031NR1
AFT05MS031GNR1
T O -- 2 7 0 -- 2
PLASTIC
AFT05MS031NR1
Figure 1. Pin Connections
(Top View)
Drain
Gate
Note: The backside of the package is the
source terminal for the transistor.
T O -- 2 7 0 -- 2 G U L L
PLASTIC
AFT05MS031GNR1
Freescale Semiconductor, Inc., 2012--2013.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +40 Vdc
Gate--Source Voltage VGS --6.0, +12 Vdc
Operating Voltage VDD 17, +0 Vdc
Storage Temperature Range Tstg --65 to +150 C
Case Operating Temperature Range TC--40 to +150 C
Operating Junction Temperature Range (1,2) TJ--40 to +225 C
Total Device Dissipation @ TC=25C
Derate above 25C
PD294
1.47
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 79C, 31 W CW, 13.6 Vdc, IDQ = 10 mA, 520 MHz
RJC 0.67 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2500 V
Machine Model (per EIA/JESD22--A115) A, passes 100 V
Charge Device Model (per JESD22--C101) IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 C
Table 5. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =40Vdc,V
GS =0Vdc)
IDSS — — 2 Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 13.6 Vdc, VGS =0Vdc)
IDSS — — 1 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 600 nAdc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D=115Adc)
VGS(th) 1.6 2.1 2.6 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1.2Adc)
VDS(on) —0.13 —Vdc
Forward Transconductance
(VDS =10Vdc,I
D=7.5Adc)
gfs —5.8 — S
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
AFT05MS031NR1 AFT05MS031GNR1
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 13.6 Vdc 30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —1.6 —pF
Output Capacitance
(VDS = 13.6 Vdc 30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —49.5 —pF
Input Capacitance
(VDS = 13.6 Vdc, VGS =0Vdc30 mV(rms)ac @ 1 MHz)
Ciss —109 —pF
Functional Tests (1) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 13.6 Vdc, IDQ =10mA,P
out =31W,f=520MHz
Common--Source Amplifier Power Gain Gps 16.5 17.7 19.0 dB
Drain Efficiency D70.0 71.4 — %
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ =10mA
Frequency
(MHz)
Signal
Type VSWR
Pin
(W) Test Voltage, VDD Result
520 CW >65:1 at all Phase Angles 1.1
(3 dB Overdrive)
17 No Device Degradation
1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
4
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
TYPICAL CHARACTERISTICS
20
1
1000
084
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
12
10
16
0
5
4
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Drain Current versus Drain--Source Voltage
2
VGS =4.25Vdc
4
3
1
8121620
IDS, DRAIN CURRENT (AMPS)
3.5 Vdc
3.25 Vdc
3Vdc
TA=25C
2.75 Vdc
250
109
90
TJ, JUNCTION TEMPERATURE (C)
Figure 4. MTTF versus Junction Temperature -- CW
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
104
110 130 150 170 190
MTTF (HOURS)
210 230
108
105
VDD = 13.6 Vdc
0
100
Measured with 30 mV(rms)ac @ 1 MHz, VGS =0Vdc
Crss
Ciss
Coss 3.75 Vdc
6
7
4Vdc
ID=2.5Amps
3.2 Amps
3.9 Amps
AFT05MS031NR1 AFT05MS031GNR1
5
RF Device Data
Freescale Semiconductor, Inc.
520 MHz NARROWBAND PRODUCTION TEST FIXTURE
Figure 5. AFT05MS031NR1 Narrowband Test Circuit Component Layout — 520 MHz
C10
C9
C13 C14
C15
C16
C11
C12
C7
C2 C8
L2
C5
C3
L1
C4
C6
AFT05MS031N
Rev. 1
C1
B2
C17
C18
B1
B3
CUT OUT AREA
Table 6. AFT05MS031NR1 Narrowband Test Circuit Component Designations and Values — 520 MHz
Part Description Part Number Manufacturer
B1, B2, B3 RF Beads, Long 2743021447 Fair--Rite
C1 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet
C2, C14 0.01 F Chip Capacitors C0805C103K5RAC Kemet
C3, C13 0.1 F Chip Capacitors CDR33BX104AKWS Kemet
C4 200 pF Chip Capacitor ATC100B201JT300XT ATC
C5 6.2 pF Chip Capacitor ATC100B6R2JT500XT ATC
C6 3.9 pF Chip Capacitor ATC100B3R9JT500XT ATC
C7, C16 180 pF Chip Capacitors ATC100B181JT200XT ATC
C8 10 pF Chip Capacitor ATC100B100JT500XT ATC
C9, C10, C11, C12 36 pF Chip Capacitors ATC100B360JT500XT ATC
C15 27 pF Chip Capacitor ATC100B270JT500XT ATC
C17 7.5 pF Chip Capacitor ATC100B7R5JT500XT ATC
C18 470 F, 63 V Electrolytic Capacitor SME63V471M12X25LL United Chemi--Con
L1 43 nH, 10 Turn Inductor B10TJLC Coilcraft
L2 56 nH Inductor 1812SMS--56NJLC Coilcraft
PCB 0.030,r= 2.55 AD255A Arlon
6
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
RF
INPUT
RF
OUTPUT
Z1 0.1990.082Microstrip
Z2 0.0170.082Microstrip
Z3* 0.6700.082Microstrip
Z4* 0.5600.060Microstrip
Z5* 0.3700.082Microstrip
Z6 0.0790.082Microstrip
Z7 0.3520.082Microstrip
* Line length includes microstrip bends
Z8 0.1900.270Microstrip
Z9 0.2570.275Microstrip
Z10 0.1450.275Microstrip
Z11 0.0910.082Microstrip
Z12* 0.13220.082Microstrip
Z13* 0.14200.082Microstrip
Z14 0.3150.082Microstrip
Figure 6. AFT05MS031NR1 Narrowband Test Circuit Schematic — 520 MHz
Table 7. AFT05MS031NR1 Narrowband Test Circuit Microstrips — 520 MHz
DescriptionMicrostripDescriptionMicrostrip
L1
Z4Z3C5Z1 Z2 Z8
Z7Z6
Z10Z9
L2
VDS
VGS
Z5
Z12Z11 Z13 C11 Z14
C2 C3 C4 C7
C6
C8 C9
C12
C16 C13 C14
C15 C17
C1
+
C10
C18
+
AFT05MS031NR1 AFT05MS031GNR1
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 520 MHz
0
0
25
123456
20
5
15
10
30
Pout, OUTPUT POWER (WATTS)
f = 520 MHz
VDD = 12.5 Vdc
Pin =0.3W
VDD = 13.6 Vdc, Pin =0.3W
VDD = 12.5 Vdc, Pin =0.6W
VDD = 13.6 Vdc, Pin =0.6W
35
40
50
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 7. Output Power versus Gate--Source Voltage
Pin, INPUT POWER (WATTS)
Gps, POWER GAIN (dB)
11
14
12
0.03 3
Gps
40
60
50
10
30
17
16
15
18 70
80
90
0.1
D, DRAIN EFFICIENCY (%)
Pout
VDD = 13.6 Vdc, IDQ =10mA
f = 520 MHz
1
19
20
0
Figure 8. Power Gain, Output Power and Drain
Efficiency versus Input Power
45
20
Pout, OUTPUT POWER (WATTS)
13
D
VDD = 13.6 Vdc, IDQ =10mA,P
out =31WAvg.
f
MHz
Zsource
Zload
520 0.72 + j1.77 1.54 + j0.80
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 9. Narrowband Series Equivalent Source and Load Impedance — 520 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50
50
8
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
136--174 MHz VHF BROADBAND REFERENCE CIRCUIT
Table 8. 136--174 MHz VHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 13.6 Volts, IDQ = 100 mA, TA=25C, CW
Frequency
(MHz)
Gps
(dB)
D
(%)
P1dB
(W)
136 25.0 64.0 31
155 23.2 63.0 31
174 23.2 62.0 31
Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type VSWR
Pin
(W) Test Voltage, VDD Result
155 CW >65:1 at all
Phase Angles
0.55
(3 dB Overdrive)
17 No Device
Degradation
AFT05MS031NR1 AFT05MS031GNR1
9
RF Device Data
Freescale Semiconductor, Inc.
136--174 MHz VHF BROADBAND REFERENCE CIRCUIT
Figure 10. AFT05MS031NR1 VHF Broadband Reference Circuit Component Layout — 136--174 MHz
C1
C2
L1
C3
C4
L2
R1
B1 C14
J1
C16 C17
C11 C12 C13
B2
L3
C15
C10
L6
C6 C7
C5 L4
L5
C8 C9
Q1
R2
D37515
Table 10. AFT05MS031NR1 VHF Broadband Reference Circuit Component Designations and Values — 136--174 MHz
Part Description Part Number Manufacturer
B1 Low Current Ferrite Bead 2508051107Y0 Fair-Rite
B2 High Current Ferrite Bead 2518065007Y6 Fair-Rite
C1 68 pF Chip Capacitor ATC600F680JT250XT ATC
C2 47 pF Chip Capacitor ATC600F470BT250XT ATC
C3, C4, C6, C7 100 pF Chip Capacitors ATC600F101JT250XT ATC
C5 20 pF Chip Capacitor ATC600F200JT250XT ATC
C8, C9 56 pF Chip Capacitors ATC600F560JT250XT ATC
C10 27 pF Chip Capacitor ATC600F270JT250XT ATC
C11 0.1 F Chip Capacitor GRM21BR71H104KA01B Murata
C12 1F Chip Capacitor GRM21BR71H105KA12L Murata
C13, C14, C15 240 pF Chip Capacitors ATC600F241JT250XT ATC
C16, C17 10 F Chip Capacitors GRM31CR61H106KA12L Murata
J1 3 Pin Connector AMP-9-146305-0 TE Connectivity
L1 19 nH Inductor 0806SQ--19NGLC Coilcraft
L2 6.9 nH Inductor 0807SQ--6N9GLC Coilcraft
L3 27 nH Inductor 0908SQ--27NGLC Coilcraft
L4 6 nH Inductor 0806SQ--6N0GLC Coilcraft
L5 14 nH Inductor 0807SQ--14NGLC Coilcraft
L6 10 nH Inductor 0807SQ--10NGLC Coilcraft
Q1 RF Power LDMOS Transistor AFT05MS031NR1 Freescale
R1 62 , 1/4 W Chip Resistor RG2012N-620-BT1 Susumu
R2 0, 1/4 W Chip Resistor CWCR08050000Z0EA Vishay
PCB 0.020,r=4.9 S1000-2 Shengyi
10
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
Table 11. AFT05MS031NR1 VHF Broadband Reference Circuit Microstrips — 136--174 MHz
DescriptionMicrostripDescriptionMicrostrip DescriptionMicrostrip
Figure 11. AFT05MS031NR1 VHF Broadband Reference Circuit Schematic — 136--174 MHz
Z17 0.0340.230Microstrip
Z18 0.0340.200Microstrip
Z19 0.0340.190Microstrip
Z20 0.0340.050Microstrip
Z21 0.0340.150Microstrip
Z22 0.0340.060Microstrip
Z23 0.0340.130Microstrip
Z24 0.0340.080Microstrip
Z9 0.2400.170Microstrip
Z10 0.0340.130Microstrip
Z11 0.0340.080Microstrip
Z12 0.2400.155Microstrip
Z13 0.2400.115Microstrip
Z14 0.2400.050Microstrip
Z15 0.0340.065Microstrip
Z16 0.0340.140Microstrip
Z1 0.0340.060Microstrip
Z2 0.0340.120Microstrip
Z3 0.0340.057Microstrip
Z4 0.0340.120Microstrip
Z5 0.0340.075Microstrip
Z6 0.0340.431Microstrip
Z7 0.0340.309Microstrip
Z8 0.2400.020Microstrip
RF
INPUT
RF
OUTPUT
Z2 Z3
Z12
R1
VGS
Z19 Z20
C12
C16
C13 C14
C11
Z4
C2
Z5 Z6
C3
Z8
L1
C4
Z9
B1
C6
Z13 Z14 Z15
L3
C15
B2
Z10
Z11
Z23
Z24
C7
Z16
C8
Z17
L4 L5
Z18
C10
VDS
Z1
Z21
C17
C5
C1 L2 C9
Z22
L6
R2
Z7
AFT05MS031NR1 AFT05MS031GNR1
11
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 136--174 MHz VHF BROADBAND
REFERENCE CIRCUIT
130
Gps
f, FREQUENCY (MHz)
Figure 12. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Input Power — 12.5 V
21.6
22.6
22.5
22.4
27
76
74
72
70
66
64
36
33
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
22.3
22.2
22.1
22
21.9
21.8
21.7
140 150 160 180
68
30
Pout,OUTPUT
POWER (WATTS)
VDD = 12.5 Vdc, Pin =0.2W(Avg.)
IDQ = 100 mA
130
f, FREQUENCY (MHz)
Figure 13. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Input Power — 13.6 V
22.1
23.1
23
22.9
30
74
72
70
68
64
62
39
36
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
22.8
22.7
22.6
22.5
22.4
22.3
22.2
140 150 160 170
66
33
Pout,OUTPUT
POWER (WATTS)
Pout
VDD = 13.6 Vdc, Pin =0.2W(Avg.)
IDQ = 100 mA
170
180
Pout
Gps
12
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
TYPICAL CHARACTERISTICS — 136--174 MHz VHF BROADBAND
REFERENCE CIRCUIT
0
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 14. Output Power versus Gate--Source Voltage
50
12345
40
10
30
20
Pout, OUTPUT POWER (WATTS)
f = 155 MHz 0
0
Detail A
20
0.5 1 1.5 2.5 3.5
15
10
5
25
f = 155 MHz
VDD = 13.6 Vdc, Pin =0.1W
VDD = 12.5 Vdc, Pin =0.2W
VDD = 12.5 Vdc
Pin =0.1W
Detail A
VDD = 13.6 Vdc
Pin =0.2W
VDD = 12.5 Vdc
Pin =0.2W VDD = 12.5 Vdc
Pin =0.1W
Pout, OUTPUT POWER (WATTS)
VGS, GATE--SOURCE VOLTAGE (VOLTS)
10
40
100
120
Figure 15. Power Gain, Output Power and Drain
Efficiency versus Input Power and Frequency
Pin, INPUT POWER (WATTS)
Gps, POWER GAIN (dB)
20
24
22
0.01 0.5
30
50
40
10
20
27
26
25 60
70
80
0.1
Pout
VDD = 13.6 Vdc, IDQ = 100 mA
Gps
D
174 MHz
D, DRAIN EFFICIENCY (%)
Pout, OUTPUT POWER (WATTS)
VDD = 13.6 Vdc, Pin =0.2W
23
VDD = 13.6 Vdc
Pin =0.1W
23
21
140
80
60
20
155 MHz
136 MHz
136 MHz
174 MHz
155 MHz
136 MHz
155 MHz
174 MHz
AFT05MS031NR1 AFT05MS031GNR1
13
RF Device Data
Freescale Semiconductor, Inc.
136--174 MHz VHF BROADBAND REFERENCE CIRCUIT
Zsource
Zload
f = 135 MHz
Zo=5
f = 175 MHz
f = 135 MHz
f = 175 MHz
VDD = 13.6 Vdc, IDQ = 100 mA, Pout =31WAvg.
f
MHz
Zsource
Zload
135 3.33 + j6.92 2.42 - j0.95
140 3.66 + j7.23 2.59 - j0.96
145 3.97 + j7.44 2.71 - j1.03
150 4.21 + j7.53 2.78 - j1.13
155 4.31 + j7.54 2.77 - j1.23
160 4.21 + j7.54 2.71 - j1.31
165 3.94 + j7.65 2.61 - j1.34
170 3.58 + j7.94 2.50 - j1.32
175 3.24 + j8.42 2.41 - j1.24
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 16. VHF Broadband Series Equivalent Source and Load Impedance — 136--174 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50
50
14
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
380--450 MHz UHF BROADBAND REFERENCE CIRCUIT
Table 12. 380--450 MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 13.6 Volts, IDQ = 100 mA, TA=25C, CW
Frequency
(MHz)
Gps
(dB)
D
(%)
P1dB
(W)
380 18.7 64.1 31
420 18.6 67.0 31
450 18.3 68.1 31
Table 13. Load Mismatch/Ruggedness (In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type VSWR
Pin
(W) Test Voltage, VDD Result
420 CW >65:1 at all
Phase Angles
1.6
(3 dB Overdrive)
17 No Device
Degradation
AFT05MS031NR1 AFT05MS031GNR1
15
RF Device Data
Freescale Semiconductor, Inc.
380--450 MHz UHF BROADBAND REFERENCE CIRCUIT
Figure 17. AFT05MS031NR1 UHF Broadband Reference Circuit Component Layout — 380--450 MHz
* C4 and C5 are mounted vertically.
C1
L1
C2
L2 L3
C4*
C5*
C3
R1
B1
C6
Q1
C13 C15
C14
L4 C8
L5
L6
C9
L7
C12
C11
C10
VGS VDS
C7
B2
J1
C17 C16
D37515
Table 14. AFT05MS031NR1 UHF Broadband Reference Circuit Component Designations and Values — 380--450 MHz
Part Description Part Number Manufacturer
B1 Low Current Ferrite Bead 2508051107Y0 Fair--Rite
B2 High Current Ferrite Bead 2518065007Y6 Fair--Rite
C1, C5 56 pF Chip Capacitors ATC600F560JT250XT ATC
C2 3.9 pF Chip Capacitor ATC600F3R9BT250XT ATC
C3 18 pF Chip Capacitor ATC600F180JT250XT ATC
C4 47 pF Chip Capacitor ATC600F470JT250XT ATC
C6, C12, C15 240 pF Chip Capacitors ATC600F241JT250XT ATC
C7 24 pF Chip Capacitor ATC600F240JT250XT ATC
C8 68 pF Chip Capacitor ATC600F680JT250XT ATC
C9 27 pF Chip Capacitor ATC600F270JT250XT ATC
C10 8.2 pF Chip Capacitor ATC600F8R2BT250XT ATC
C11 3.0 pF Chip Capacitor ATC600F3R0BT250XT ATC
C13 0.1 F Chip Capacitor GRM21BR71H104KA01B Murata
C14 1F Chip Capacitor GRM21BR71H105KA12L Murata
C16, C17 10 F Chip Capacitors GRM31CR61H106KA12L Murata
J1 3 Pin Connector AMP--9--146305--0 TE Connectivity
L1, L2, L3, L6 5.5 nH Inductors 0806SQ--5N5GLC Coilcraft
L4 17 nH Inductor 0908SQ--17NGLC Coilcraft
L5 1.65 nH Inductor 0906--2KLC Coilcraft
L7 2.55 nH Inductor 0906--3JLC Coilcraft
Q1 RF Power LDMOS Transistor AFT05MS031NR1 Freescale
R1 62 , 1/4 W Chip Resistor RG2012N--620--BT1 Susumu
PCB 0.020,r=4.9 S1000--2 Shengyi
16
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
RF
INPUT
RF
OUTPUT
Z1 0.0340.060Microstrip
Z2 0.0340.200Microstrip
Z3 0.0340.056Microstrip
Z4 0.0340.154Microstrip
Z5* 0.0340.237Microstrip
Z6* 0.0340.234Microstrip
Z7 0.0340.010Microstrip
Z8 0.0340.083Microstrip
Z9 0.0340.178Microstrip
* Line length includes microstrip bends
Z10 0.2400.048Microstrip
Z11 0.2400.142Microstrip
Z12 0.0340.149Microstrip
Z13* 0.0340.085Microstrip
Z14 0.2400.090Microstrip
Z15 0.2400.186Microstrip
Z16 0.0340.149Microstrip
Z17* 0.0340.085Microstrip
Z18 0.2400.044Microstrip
Figure 18. AFT05MS031NR1 UHF Broadband Reference Circuit Schematic — 380--450 MHz
Table 15. AFT05MS031NR1 UHF Broadband Reference Circuit Microstrips — 380--450 MHz
DescriptionMicrostripDescriptionMicrostrip
Z2 Z3
Z14
R1
VGS
Z25 Z26
C12
C17
C14 C13
C11
Z4
C2
Z5 Z6
C3
Z7
L1 L2 L3
C4
Z8
C5
Z9 Z10 Z11
B1
C7
Z15 Z18 Z19
L4
C16
B2
Z12
Z13
Z16
Z17
C8
Z20 Z21
L5
C9
Z22 Z23
L6 L7
Z24
C10
VDS
Z19 0.0340.057Microstrip
Z20* 0.0340.201Microstrip
Z21* 0.0340.110Microstrip
Z22* 0.0340.361Microstrip
Z23 0.0340.112Microstrip
Z24 0.0340.083Microstrip
Z25 0.0340.073Microstrip
Z26 0.0340.077Microstrip
Z27 0.0340.060Microstrip
DescriptionMicrostrip
Z1
Z27
C15
C6
C1
AFT05MS031NR1 AFT05MS031GNR1
17
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 380--450 MHz UHF BROADBAND
REFERENCE CIRCUIT
370
Gps
f, FREQUENCY (MHz)
Figure 19. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Input Power — 12.5 V
17
18
17.9
17.8
25
80
75
70
65
30
29
28
27
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
17.7
17.6
17.5
17.4
17.3
17.2
17.1
380 390 400 410 420 430 440 460
60
26
Pout,OUTPUT
POWER (WATTS)
VDD = 12.5 Vdc, Pin =0.5W(Avg.)
IDQ = 100 mA
Pout
370
Gps
f, FREQUENCY (MHz)
Figure 20. Power Gain, Drain Effiency and Output Power versus
Frequency at a Constant Input Power — 13.6 V
17.5
18.5
18.4
18.3
30
80
75
70
65
35
34
33
32
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
18.2
18.1
18
17.9
17.8
17.7
17.6
380 390 400 410 420 430 440 450
60
31
Pout,OUTPUT
POWER (WATTS)
Pout
VDD = 13.6 Vdc, Pin =0.5W(Avg.)
IDQ = 100 mA
450
460
18
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
TYPICAL CHARACTERISTICS — 380--450 MHz UHF BROADBAND
REFERENCE CIRCUIT
0
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 21. Output Power versus Gate--Source Voltage
50
12345
40
10
30
20
Pout, OUTPUT POWER (WATTS)
f = 420 MHz
VDD = 13.6 Vdc, Pin =0.5W
0
0
Detail A
4
0.4 0.8 1.2 1.6 2
3
2
1
5
f = 420 MHz
VDD = 13.6 Vdc, Pin =0.25W
VDD = 12.5 Vdc, Pin =0.5W
VDD = 12.5 Vdc,
Pin =0.25W
Detail A
VDD = 13.6 Vdc,
Pin =0.5W
VDD = 13.6 Vdc, Pin =0.25W
VDD = 12.5 Vdc,
Pin =0.5W
VDD = 12.5 Vdc,
Pin =0.25W
Pout, OUTPUT POWER (WATTS)
VGS, GATE--SOURCE VOLTAGE (VOLTS)
40
0
20
60
100
80
Figure 22. Power Gain, Output Power and Drain
Efficiency versus Input Power and Frequency
Pin, INPUT POWER (WATTS)
Gps, POWER GAIN (dB)
12
16
14
0.01 4
30
50
40
10
20
22
20
18
60
70
80
0.1
420 MHz
Pout
VDD = 13.6 Vdc, IDQ = 100 mA
1
450 MHz
380 MHz
Gps
D
420 MHz
450 MHz
380 MHz
420 MHz
450 MHz
380 MHz
D, DRAIN EFFICIENCY (%)
Pout, OUTPUT POWER (WATTS)
AFT05MS031NR1 AFT05MS031GNR1
19
RF Device Data
Freescale Semiconductor, Inc.
380--450 MHz UHF BROADBAND REFERENCE CIRCUIT
Zsource
f = 380 MHz
f = 450 MHz
Zload
f = 380 MHz
f = 450 MHz
Zo=5
VDD = 13.6 Vdc, IDQ = 100 mA, Pout =31WAvg.
f
MHz
Zsource
Zload
380 1.57 + j1.94 2.53 -- j0.27
390 1.66 + j2.07 2.53 -- j0.26
400 1.74 + j2.16 2.56 -- j0.27
410 1.79 + j2.20 2.49 -- j0.29
420 1.79 + j2.21 2.38 -- j0.28
430 1.74 + j2.21 2.26 -- j0.24
440 1.62 + j2.23 2.11 -- j0.16
450 1.45 + j2.29 1.95 -- j0.05
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 23. UHF Broadband Series Equivalent Source and Load Impedance — 380--450 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50
50
20
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
450--520 MHz UHF BROADBAND REFERENCE CIRCUIT
Table 16. 450--520 MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 13.6 Volts, IDQ = 100 mA, TA=25C, CW
Frequency
(MHz)
Gps
(dB)
D
(%)
P1dB
(W)
450 17.7 62.0 31
490 18.7 63.8 31
520 17.9 67.0 31
Table 17. Load Mismatch/Ruggedness (In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type VSWR
Pin
(W) Test Voltage, VDD Result
490 CW >65:1 at all
Phase Angles
2.0
(3 dB Overdrive)
17 No Device
Degradation
AFT05MS031NR1 AFT05MS031GNR1
21
RF Device Data
Freescale Semiconductor, Inc.
450--520 MHz UHF BROADBAND REFERENCE CIRCUIT
Figure 24. AFT05MS031NR1 UHF Broadband Reference Circuit Component Layout — 450--520 MHz
C1
L1
C2
L2
L3
C5
C3
B1
C16
Q1
C15
C14
L4
C8
L5
L6
C10
L7
C17
C12
C11
VGS VDS
C7
B2
J1
C6 C9
C4
R1
C19
C13
C18
D37515
Table 18. AFT05MS031NR1 UHF Broadband Reference Circuit Component Designations and Values — 450--520 MHz
Part Description Part Number Manufacturer
B1 Low Current Ferrite Bead 2508051107Y0 Fair--Rite
B2 High Current Ferrite Bead 2518065007Y6 Fair--Rite
C1 56 pF Chip Capacitor ATC600F560JT250XT ATC
C2 2.7 pF Chip Capacitor ATC600F2R7BT250XT ATC
C3 12 pF Chip Capacitor ATC600F120JT250XT ATC
C4, C9 27 pF Chip Capacitors ATC600F270JT250XT ATC
C5, C8 33 pF Chip Capacitors ATC600F330JT250XT ATC
C6 39 pF Chip Capacitor ATC600F390JT250XT ATC
C7, C10 18 pF Chip Capacitors ATC600F180JT250XT ATC
C11 8.2 pF Chip Capacitor ATC600F8R2BT250XT ATC
C12 1.8 pF Chip Capacitor ATC600F1R8BT250XT ATC
C13 0.1 F Chip Capacitor GRM21BR71H104KA01B Murata
C14 1F Chip Capacitor GRM21BR71H105KA12L Murata
C15, C16, C17 240 pF Chip Capacitors ATC600F241JT250XT ATC
C18, C19 10 F Chip Capacitors GRM31CR61H106KA12L Murata
J1 3 Pin Connector AMP--9--146305--0 TE Connectivity
L1, L3 6.0 nH Inductors 0806SQ--6N0GLC Coilcraft
L2, L6 5.5 nH Inductors 0806SQ5N5GLC Coilcraft
L4 17 nH Inductor 0908SQ--17NGLC Coilcraft
L5, L7 1.65 nH Inductors 0906--2KLC Coilcraft
Q1 RF Power LDMOS Transistor AFT05MS031NR1 Freescale
R1 62 , 1/4 W Chip Resistor RG2012N--620--BT1 Susumu
PCB 0.020,r=4.9 S1000--2 Shengyi
22
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
RF
INPUT
RF
OUTPUT
Z1 0.0340.060Microstrip
Z2 0.0340.200Microstrip
Z3 0.0340.128Microstrip
Z4 0.0340.054Microstrip
Z5* 0.0340.202Microstrip
Z6* 0.0340.160Microstrip
Z7 0.0340.010Microstrip
Z8 0.0340.115Microstrip
Z9 0.0340.060Microstrip
Z10 0.0340.150Microstrip
* Line length includes microstrip bends
Z11 0.2400.010Microstrip
Z12 0.2400.180Microstrip
Z13 0.0340.149Microstrip
Z14 0.0340.084Microstrip
Z15 0.2400.054Microstrip
Z16 0.2400.170Microstrip
Z17 0.0340.149Microstrip
Z18 0.0340.184Microstrip
Z19 0.2400.044Microstrip
Z20 0.0340.057Microstrip
Figure 25. AFT05MS031NR1 UHF Broadband Reference Circuit Schematic — 450--520 MHz
Table 19. AFT05MS031NR1 UHF Broadband Reference Circuit Microstrips — 450--520 MHz
DescriptionMicrostripDescriptionMicrostrip
Z2 Z3
Z15
R1
VGS
Z25 Z26
C17
C19
C14 C13
C11
Z4
C2
Z5 Z6
C3
Z7
L1 L2 L3
C4
Z8
C5
Z9 Z10 Z11
B1
C7
Z16 Z19 Z20
L4
C18
B2
Z13
Z14
Z17
Z18
C8
Z21
C9
Z22 Z23
L5 L6
Z24
C10
VDS
Z21 0.0340.010Microstrip
Z22 0.0340.176Microstrip
Z23* 0.0340.118Microstrip*
Z24* 0.0340.295Microstrip*
Z25 0.0340.018Microstrip
Z26 0.0340.177Microstrip
Z27 0.0340.022Microstrip
Z28 0.0340.188Microstrip
Z29 0.0340.060Microstrip
DescriptionMicrostrip
Z1
Z29
C6
Z12 L7
Z27 Z28
C12
C15
C16
C1
AFT05MS031NR1 AFT05MS031GNR1
23
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 450--520 MHz UHF BROADBAND
REFERENCE CIRCUIT
440
Gps
f, FREQUENCY (MHz)
Figure 26. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Input Power — 12.5 V
16
18
17.8
17.6
26
70
68
66
64
60
30
29
28
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
17.4
17.2
17
16.8
16.6
16.4
16.2
450 460 470 480 490 500 510 530
62
27
Pout,OUTPUT
POWER (WATTS)
VDD = 12.5 Vdc, Pin =0.5W(Avg.)
IDQ = 100 mA
Pout
440
Gps
f, FREQUENCY (MHz)
Figure 27. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Input Power — 13.6 V
16
18.5
18.25
18
26
69
67
65
63
36
34
32
30
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
17.75
17.5
17.25
17
16.75
16.5
16.25
460 480 500 520
61
28
Pout,OUTPUT
POWER (WATTS)
Pout
VDD = 13.6 Vdc, Pin =0.5W(Avg.)
IDQ = 100 mA
520
71
73
18.75
19
450 470 490 510 530
24
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
TYPICAL CHARACTERISTICS — 450--520 MHz UHF BROADBAND
REFERENCE CIRCUIT
0
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 28. Output Power versus Gate--Source Voltage
50
12345
40
10
30
20
Pout, OUTPUT POWER (WATTS)
f = 490 MHz
VDD = 13.6 Vdc, Pin =0.5W
0
0
Detail A
20
0.5 1 1.5 22.5
15
10
5
25
f = 490 MHz
VDD = 13.6 Vdc, Pin =0.25W
VDD = 12.5 Vdc, Pin =0.5W
VDD = 12.5 Vdc,
Pin =0.25W
Detail A
VDD = 13.6 Vdc,
Pin =0.5W
VDD = 13.6 Vdc, Pin =0.25W
VDD = 12.5 Vdc,
Pin =0.5W
VDD = 12.5 Vdc,
Pin =0.25W
Pout, OUTPUT POWER (WATTS)
VGS, GATE--SOURCE VOLTAGE (VOLTS)
6
60
33.5
Figure 29. Power Gain, Output Power and Drain
Efficiency versus Input Power and Frequency
Pin, INPUT POWER (WATTS)
Gps, POWER GAIN (dB)
12
16
14
0.01 3
40
0
20
20
18 60
80
0.1
490 MHz
Pout
VDD = 13.6 Vdc, IDQ = 100 mA
1
Gps
D
450 MHz
490 MHz
490 MHz
450 MHz
450 MHz
Pout, OUTPUT POWER (WATTS)
D, DRAIN EFFICIENCY (%)
520 MHz
520 MHz 520 MHz
AFT05MS031NR1 AFT05MS031GNR1
25
RF Device Data
Freescale Semiconductor, Inc.
450--520 MHz UHF BROADBAND REFERENCE CIRCUIT
Zsource
f = 520 MHz
f = 450 MHz
Zload
f = 520 MHz f = 450 MHz
Zo=5
VDD = 13.6 Vdc, IDQ = 100 mA, Pout =31WAvg.
f
MHz
Zsource
Zload
450 1.37 + j1.64 2.57 -- j1.01
460 1.43 + j1.72 2.49 -- j1.03
470 1.47 + j1.79 2.38 -- j1.03
480 1.49 + j1.83 2.26 -- j1.01
490 1.47 + j1.86 2.11 -- j0.95
500 1.41 + j1.89 1.97 -- j0.87
510 1.32 + j1.93 1.82 -- j0.76
520 1.20 + j1.99 1.68 -- j0.62
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 30. UHF Broadband Series Equivalent Source and Load Impedance — 450--520 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50
50
26
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
PACKAGE DIMENSIONS
AFT05MS031NR1 AFT05MS031GNR1
27
RF Device Data
Freescale Semiconductor, Inc.
28
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
AFT05MS031NR1 AFT05MS031GNR1
29
RF Device Data
Freescale Semiconductor, Inc.
30
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
AFT05MS031NR1 AFT05MS031GNR1
31
RF Device Data
Freescale Semiconductor, Inc.
32
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0June 2012 Initial Release of Data Sheet
1Apr. 2013 Load Mismatch/Ruggedness tables: changed output power to input power to clarify the conditions used
during test, p. 1, 3, 14, 20
Added 136--174 MHz VHF Broadband Reference Circuit as follows:
-- Typical Performance table, p. 1
-- Table 8, VHF Broadband Performance, p. 8
-- Table 9, Load Mismatch/Ruggedness, p. 8
-- Fig. 10, VHF Broadband Reference Circuit Component Layout, p. 9
-- Table 10, VHF Broadband Reference Circuit Component Designations and Values, p. 9
-- Fig. 11, VHF Broadband Reference Circuit Schematic, p. 10
-- Table 11, VHF Broadband Reference Circuit Microstrips, p. 10
-- Fig. 12, Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input
Power--12.5V,p.11
-- Fig. 13, Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input
Power--13.6V,p.11
-- Fig. 14, Output Power versus Gate--Source Voltage, p. 12
-- Fig. 15, Power Gain, Output Power and Drain Efficiency versus Input Power and Frequency, p. 12
-- Fig. 16, VHF Broadband Series Equivalent Source and Load Impedance, p. 13
Figs. 10, 17 and 24, Reference Circuit Component Layouts: added manufacturer part number, p. 9, 15, 21
Fig. 23, UHF Broadband Series Equivalent Source and Load Impedance — 380--450 MHz: corrected bias
measurement from 10 mA to 100 mA, p. 19
AFT05MS031NR1 AFT05MS031GNR1
33
RF Device Data
Freescale Semiconductor, Inc.
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Document Number: AFT05MS031N
Rev. 1, 4/2013