83 RadHard MSI Logic
UT54ACS151/UT54ACTS151
Radiation-Hardened
1 of 8 Data Selectors/Multiplexers
FEATURES
• 8-line to 1-line multiplexers can perform as
Boolean function generators, parallel-to-serial
converters, and data source selectors
• radiation-hardened CMOS
- Latchup immune
• High speed
• Low power consumption
• Single 5 volt supply
• Available QML Q or V processes
• Flexible package
- 16-pin DIP
- 16-lead flatpack
DESCRIPTION
The UT54ACS151 and the UT54ACTS151 are data multiplex-
ers that provide full binary decoding to select one of eight data
sources. The strobe input, G, must be at a low logic level to
enable the inputs. A high level at the strobe terminal forces the
Y output high and the Y output low.
The devices are characterized over full military temperature
range of -55 C to +125 C.
FUNCTION TABLE
H= high level, L = low level, X = irrelevant
D0, D1... D7 = the level of the D respective input
PINOUTS
16-Pin DIP
Top View
16-Lead Flatpack
Top View
LOGIC SYMBOL
INPUTS OUTPUT
SELECT STROBE
CB A GY Y
XXXHLH
L L L L D0 D0
L L HLD1 D1
LHL L D2 D2
LH H LD3 D3
HL L L D4 D4
HLHLD5 D5
H H L L D6 D6
HHHLD7 D7
D3
D2
D1
D0
Y
Y
G
Vss
VDD
D4
D5
D6
D7
A
B
C
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VDD
D4
D5
D6
D7
A
B
C
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
D3
D2
D1
D0
Y
Y
G
Vss
(7)
(11)
(10)
(9)
(4)
(3)
(2)
(1)
(15)
(14)
(13)
(12)
G
A
B
C
D0
D1
D2
D3
D4
D5
D6
D7
E
N
0
1
2
0
1
2
3
4
5
6
(6) Y
MUX
Note:
1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and IEC
Publication 617-12.
(5) Y
G
0
3
---
RadHard MSI Logic 84
UT54ACS151/UT54ACTS151
LOGIC DIAGRAM
(5)
Y
D0
D1
D2
D3
D4
D5
D6
D7
(7)
(4)
(3)
(2)
(1)
(15)
(14)
(13)
(12)
STROBE G
(6)
Y
A
B
C
DATA
SELECT
DATA
(9)
(10)
(11)
OUTPUTS
85 RadHard MSI Logic
UT54ACS151/UT54ACTS151
RADIATION HARDNESS SPECIFICATIONS 1
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER LIMIT UNITS
Total Dose 1.0E6 rads(Si)
SEU Threshold 280 MeV-cm2/mg
SEL Threshold 120 MeV-cm2/mg
Neutron Fluence 1.0E14 n/cm2
SYMBOL PARAMETER LIMIT UNITS
VDD Supply voltage -0.3 to 7.0 V
VI/O Voltage any pin -.3 to VDD +.3 V
TSTG Storage Temperature range -65 to +150 C
TJMaximum junction temperature +175 C
TLS Lead temperature (soldering 5 seconds) +300 C
JC Thermal resistance junction to case 20 C/W
IIDC input current 10 mA
PDMaximum power dissipation 1W
SYMBOL PARAMETER LIMIT UNITS
VDD Supply voltage 4.5 to 5.5 V
VIN Input voltage any pin 0 to VDD V
TCTemperature range -55 to + 125 C
RadHard MSI Logic 86
UT54ACS151/UT54ACTS151
DC ELECTRICAL CHARACTERISTICS 7
(VDD = 5.0V 10%; VSS = 0V 6, -55 C < TC < +125 C)
SYMBOL PARAMETER CONDITION MIN MAX UNIT
VIL Low-level input voltage 1
ACTS
ACS
0.8
.3VDD
V
VIH High-level input voltage 1
ACTS
ACS
.5VDD
.7VDD
V
IIN Input leakage current
ACTS/ACS VIN = VDD or VSS -1 1A
VOL Low-level output voltage 3
ACTS
ACS IOL = 8.0mA
IOL = 100 A0.40
0.25 V
VOH High-level output voltage 3
ACTS
ACS IOH = -8.0mA
IOH = -100 A.7VDD
VDD - 0.25 V
IOS Short-circuit output current 2 ,4
ACTS/ACS VO = VDD and VSS -200 200 mA
IOL Output current10
(Sink)
VIN = VDD or VSS
VOL = 0.4V
8mA
IOH Output current10
(Source)
VIN = VDD or VSS
VOH = VDD - 0.4V
-8 mA
Ptotal Power dissipation 2, 8, 9 CL = 50pF 2.3 mW/
MHz
IDDQ Quiescent Supply Current VDD = 5.5V 10 A
IDDQ Quiescent Supply Current Delta
ACTS For input under test
VIN = VDD - 2.1V
For all other inputs
VIN = VDD or VSS
VDD = 5.5V
1.6 mA
CIN Input capacitance 5 = 1MHz @ 0V 15 pF
COUT Output capacitance 5 = 1MHz @ 0V 15 pF
87 RadHard MSI Logic
UT54ACS151/UT54ACTS151
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: VIH = VIH(min) + 20%, - 0%; VIL = VIL(max) + 0%,
- 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but
are guaranteed to VIH(min) and VIL(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed
3,765 pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS
at frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose 1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
RadHard MSI Logic 88
UT54ACS151/UT54ACTS151
AC ELECTRICAL CHARACTERISTICS 2
(VDD = 5.0V 10%; VSS = 0V 1, -55 C < TC < +125 C)
Notes:
1. Maximum allowable relative shift equals 50mV.
2. All specifications valid for radiation dose 1E6 rads(Si).
SYMBOL PARAMETER MINIMUM MAXIMUM UNIT
tPHL Input to Y 1 22 ns
tPLH Input to Y 1 23 ns
tPHL Input to Y1 25 ns
tPLH Input to Y1 19 ns
tPHL Select to Y 1 21 ns
tPLH Select to Y 1 22 ns
tPHL Select to Y1 24 ns
tPLH Select to Y1 21 ns
tPHL G to Y 1 14 ns
tPLH G to Y 111 ns
tPHL G to Y1 14 ns
tPLH G to Y1 10 ns
