Philips Semiconductors Product specification Schottky barrier (double) diodes 1PS70SB40 series FEATURES PINNING Low forward voltage 1PS70SB.. e Guard ring protected PIN 40 44 45 46 3 e Very small SMD package 1 a a ay Ky e Low diode capacitance. 2 no. Kp ap kp 1 2 3 ky | ky, @ | Ki, Ko | ay, a2 MLC356 APPLICATIONS * Ultra high-speed switching Fig.3 1PS70SB44 diode Voltage clamping C] 3 configuration (symbol). e Protection circuits e Blocking diodes. 3 DESCRIPTION Planar Schottky barrier diodes 1 2 1 Pape 2 encapsulated in a SC70-3 very small Top view plastic SMD package. Single diodes manres MLC359 and double diodes with different Fig.1 Simplified outline pinning are available. (SC70-3) and pin Fig.4 1PS70SB45 diode configuration. contiguration (symbol). MARKING MARKING TYPE NUMBER CODE ; 3 1PS70SB40 6t3 1PS70SB44 6t4 1 Gil > 2 1 Ge) 2 1PS70SB45 6t5 me. MLO357 MLC360 1PS70SB46 6t Fig.2 1PS70SB40 single diode configuration Fig.5 1PS70SB46 diode (symbol). configuration (symbol). 1996 Oct 14 2-9Philips Semiconductors Product specification Schottky barrier (double) diodes 1PS70SB40 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS | MIN. | MAX. | UNIT Per diode Ve continuous reverse voltage - 40 Vv lr continuous forward current - 120 mA ler repetitive peak forward current t<1s; 6<05 - 120 mA lesm non-repetitive peak forward current tp < 10 ms - 200 mA Tstg storage temperature ~65 +150 C Tj junction temperature ~ 150 C Tamb operating ambient temperature 65 +150 {C ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL | PARAMETER CONDITIONS MAX. UNIT Per diode Ve continuous forward voltage see Fig.6 Ip=1mA 380 mV lp=10mA 500 mv Ir=15 mA 1 V IR continuous reverse current Va = 30 V; note 1; see Fig.7 1 A V_a = 40 V; note 1; see Fig.7 10 pA t charge carrier life time le = 5 mA; Krakauer method 100 ps Cy diode capacitance Va=O0V;f=1MHz; see Fig.9 [5 pF Note 1. Pulsed test: tp = 300 ps; 5 = 0.02. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rihj-a thermal resistance from junction to ambient | note 1 625 KAW Note 1. Refer to SC70-3 standard mounting conditions. 1996 Oct 14 2-10Philips Semicanductors Product specification Schottky barrier (double) diodes 1PS70SB40 series GRAPHICAL DATA 102 MLCIGT - 1 Ip (mA) ay @ 10? 10? 9 0.2 0.4 06 0.8 1.0 Ve(V) (1) Temp = 150 C. (2) Tamb = 85C. (3) Tamp = 25C. (4) Tamp = -40 C. Fig.6 Forward current as a function of forward voltage; typical values. Q 10 20 Va(v) 30 (1) Temp = 150 C. (2) Temp = 85 C. (3) Tamp = 25C. Fig.7 Reverse current as a function of reverse voltage; typical values. 103 "diff (Q) 107 10 15 2 10 1 10 Ieqmay 10 f= 10 KHz. Fig.8 Differential forward resistance as a function of forward current; typical values. MLCIE3 Q 10 20 Vay 3 f= 1 MHz; Tamp = 25 C. Fig.9 Diode capacitance as a function of reverse voltage; typical values. 1996 Oct 14