CDBT0540-G
RoHS Device
SMD Schottky Barrier Diode
QW-BA016 Page 1
REV:B
Features
-Small surface mount type.
-Low reverse current and low forward voltage.
-High reliability.
Marking: D3A
Dimensions in inches and (millimeter)
Parameter Value Unit
Peak reverse voltage
DC reverse voltage
Peak surge forward voltage
Mean rectifying current
Power dissipation
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
VRM
VR
IFSM
IO
PD
RθJA
TJ
TSTG
40
40
3
0.5
250
500
125
-40 to +125
V
OC/W
V
A
A
mW
OC
OC
SOT-23
3
1 2
0.119(3.00)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.083(2.10)
0.066(1.70)
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
0.006(0.15)
0.002(0.05)
0.103(2.60)
0.086(2.20)
0.006(0.15) max
0.007(0.20) min
Symbol
Symbol
Parameter Conditions Min
Max
Unit
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
IR=100μA
IF=500mA
VR=10V
VR=30V
VR=0V, f=1MHz
VR=10V, f=1MHz
VBR
VF
IR
CT
40
0.55
30
50
V
V
μA
μA
pF
pF
Typ.
125
20
Comchip Technology CO., LTD.
Maximum Ratings (at Ta=25°C unless otherwise noted)
Electrical Characteristics (at Ta=25°C unless otherwise noted)
RATING AND CHARACTERISTIC CURVES (CDBT0540-G)
Page 2
QW-BA016
Fig.1 Forward Characteristics
IF, Forward Current (A)
VF, Forward Voltage (V)
0 0.4 0.7
Fig.2 Reverse Characteristics
0.1μ
IR, Reverse Current (A)
VR, Reverse Voltage (V)
0 25
Fig.3 Capacitance Between Terminals
Characteristics
1
CT, Capacitance Between Terminals (pF)
VR, Reverse Voltage (V)
025
1m
100m
5
10m
Fig.4 Power Derating Curve
0
PD, Power Dissipation (W)
TA, Ambient Temperature (°C)
0 25
0.5
75 150
20
1000
10μ
35
10
REV:B
10μ
1m
20
10
100
100
SMD Schottky Barrier Diode
0.1 0.2 0.3 0.5 0.6
1μ
100μ
10m
1
O
TA1C
=25
O
TA=75C
O
A=
T25C
O
TA=-25C
10 15 30
1μ
100μ
O
TA7 C= 5
O
TA25 C=
O
A2
T =15 C
515 50 125
Comchip Technology CO., LTD.
