•850nm
WAVELENGTH
RANGE
•HIGH
WAVELENGTH
UNIFORMITY
•VARIOUS CONFIG-
URATIONS
AVAILABLE ON
REQUEST
•DATA RATES <3GB/SEC
•LOW THRESHOLD
CURRENT
850nm
Multi-Mode
VCSEL Arrays
AP850
Features
125 µm
125 µm
250 µm
250 µm
250 µm
2.5 mm
500 µm
125 µm
80 µm
150 µm
500 µm
225 µm
•Ordering information
Part Number Description
APA1101020000 850nm multi-
mode array 1x2
APA1101040000 850nm multi-
mode array 1x4
APA1101120000 850nm multi-
mode array 1x12
Avalon Photonics Ltd, Badenerstrasse 569
8048 Zurich, Switzerland
Tel: +41 1 498 1411 Fax: +41 1 498 1412
Email: vcsel@avap.ch
Internet: www.avalon-photonics.com
Electro-optical characteristics (for individual lasers)
Parameter Symbol Conditions Ratings Units
Min Typ Max
Threshold current Ith 1.0 2.0 3.0 mA
Threshold voltage Vth 1.6 V
Operating current Iop
typ.Pout = 0.5 mW
3mA
Operating voltage Vop 1.7 V
Emission wavelength* λ840 850 860 nm
Slope efficiency η0.4 mW/mA
Beam divergence θFWHM 16 °
Differential Resistance RDiff 30 45 60 Ω
Capacitance C 0.8 pF
Bandwidth f3dB >3 GHz
MM = multi-mode; FWHM = full width half-maximum *Tighter wavelength specifications available on request (T=25°C)
(T=25°C)
The above specifications are subject to change
without notice
Parameter Symbol Ratings Units
Min Typ Max
Temperature tuning coefficient δλ/δT 0.06 nm/K
Threshold current variation 0 to+70°C
∆Ith 0.6 mA
Current tuning coefficient δλ/δI 0.2 nm/mA
Thermal characteristics
Parameter Symbol Rating Units
Optical output power Pmax 7mW
Peak forward current Imax 10 mA
Electrical power dissipation Ptot 20 mW/laser
Reverse voltage VR5V
Operating temperature Top 0 to +70 °C
Storage temperature Tstg -40 to +100 °C
Absolute maximum ratings
850nm Multi-
Mode VCSEL
Arrays
AP850
INVISIBLE LASER RADIATION
- AVOID DIRECT EXPOSURE
PEAK POWER : 3 mW
WAVELENGTH : 850 nm
CLASS IIIb LASER PRODUCT
