Eice DR IV ER TM High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 600 V gate drive IC 6ED003L06-F2 6ED003L02-F2 EiceDRIVERTM datash eet <Revision 2.5>, 21.01.2013 Indust rial Po wer & Con trol Edition 21.01.2013 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. EiceDRIVER(TM) 6ED003L06-F2, 6ED003L02-F2 Revision History Page or Item Subjects (major changes since previous revision) <Revision 2.5>, 21.01.2013 p. 8 revised Figure 1 p. 20 revised Figure 8 Trademarks of Infineon Technologies AG AURIXTM, BlueMoonTM, C166TM, CanPAKTM, CIPOSTM, CIPURSETM, COMNEONTM, EconoPACKTM, CoolMOSTM, CoolSETTM, CORECONTROLTM, CROSSAVETM, DAVETM, EasyPIMTM, EconoBRIDGETM, EconoDUALTM, EconoPIMTM, EiceDRIVERTM, eupecTM, FCOSTM, HITFETTM, HybridPACKTM, IRFTM, ISOFACETM, IsoPACKTM, MIPAQTM, ModSTACKTM, my-dTM, NovalithICTM, OmniTuneTM, OptiMOSTM, ORIGATM, PRIMARIONTM, PrimePACKTM, PrimeSTACKTM, PRO-SILTM, PROFETTM, RASICTM, ReverSaveTM, SatRICTM, SIEGETTM, SINDRIONTM, SIPMOSTM, SMARTiTM, SmartLEWISTM, SOLID FLASHTM, TEMPFETTM, thinQ!TM, TRENCHSTOPTM, TriCoreTM, X-GOLDTM, X-PMUTM, XMMTM, XPOSYSTM. Other Trademarks Advance Design SystemTM (ADS) of Agilent Technologies, AMBATM, ARMTM, MULTI-ICETM, KEILTM, PRIMECELLTM, REALVIEWTM, THUMBTM, VisionTM of ARM Limited, UK. AUTOSARTM is licensed by AUTOSAR development partnership. BluetoothTM of Bluetooth SIG Inc. CAT-iqTM of DECT Forum. COLOSSUSTM, FirstGPSTM of Trimble Navigation Ltd. EMVTM of EMVCo, LLC (Visa Holdings Inc.). EPCOSTM of Epcos AG. FLEXGOTM of Microsoft Corporation. FlexRayTM is licensed by FlexRay Consortium. HYPERTERMINALTM of Hilgraeve Incorporated. IECTM of Commission Electrotechnique Internationale. IrDATM of Infrared Data Association Corporation. ISOTM of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLABTM of MathWorks, Inc. MAXIMTM of Maxim Integrated Products, Inc. MICROTECTM, NUCLEUSTM of Mentor Graphics Corporation. MifareTM of NXP. MIPITM of MIPI Alliance, Inc. MIPSTM of MIPS Technologies, Inc., USA. muRataTM of MURATA MANUFACTURING CO., MICROWAVE OFFICETM (MWO) of Applied Wave Research Inc., OmniVisionTM of OmniVision Technologies, Inc. OpenwaveTM Openwave Systems Inc. RED HATTM Red Hat, Inc. RFMDTM RF Micro Devices, Inc. SIRIUSTM of Sirius Satellite Radio Inc. SOLARISTM of Sun Microsystems, Inc. SPANSIONTM of Spansion LLC Ltd. SymbianTM of Symbian Software Limited. TAIYO YUDENTM of Taiyo Yuden Co. TEAKLITETM of CEVA, Inc. TEKTRONIXTM of Tektronix Inc. TOKOTM of TOKO KABUSHIKI KAISHA TA. UNIXTM of X/Open Company Limited. VERILOGTM, PALLADIUMTM of Cadence Design Systems, Inc. VLYNQTM of Texas Instruments Incorporated. VXWORKSTM, WIND RIVERTM of WIND RIVER SYSTEMS, INC. ZETEXTM of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 datasheet 3 <Revision 2.5>, 21.01.2013 EiceDRIVER(TM) 6ED003L06-F2, 6ED003L02-F2 Table of Contents 1 Overview ............................................................................................................................................. 7 2 Blockdiagram...................................................................................................................................... 8 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 Pin configuration, description, and functionality ........................................................................... 9 Low Side and High Side Control Pins (Pin 2, 3, 4, 5, 6, 7) .................................................................. 9 EN (Gate Driver Enable, Pin 10) ........................................................................................................ 10 FAULT (Fault Feedback, Pin 8) ......................................................................................................... 10 ITRIP and RCIN (Over-Current Detection Function, Pin 9, 11) ......................................................... 11 VCC, VSS and COM (Low Side Supply, Pin 1, 12,13) ...................................................................... 11 VB1,2,3 and VS1,2,3 (High Side Supplies, Pin 18, 20, 22, 24, 26, 28) ............................................. 11 LO1,2,3 and HO1,2,3 (Low and High Side Outputs, Pin 14, 15, 16, 19, 23, 27) ............................... 11 4 4.1 4.2 4.3 4.4 4.5 4.6 Electrical Parameters ....................................................................................................................... 12 Absolute Maximum Ratings ............................................................................................................... 12 Required operation conditions ........................................................................................................... 13 Operating Range ................................................................................................................................ 13 Static logic function table ................................................................................................................... 14 Static parameters ............................................................................................................................... 14 Dynamic parameters .......................................................................................................................... 16 5 Timing diagrams............................................................................................................................... 17 6 6.1 6.2 Package ............................................................................................................................................. 19 PG-DSO-28 ........................................................................................................................................ 19 PG-TSSOP-28.................................................................................................................................... 20 datasheet 4 <Revision 2.5>, 21.01.2013 EiceDRIVER(TM) 6ED003L06-F2, 6ED003L02-F2 List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 datasheet Typical Application ............................................................................................................................... 8 Block diagram for 6ED003L06-F2 / 6ED003L02-F2 ............................................................................ 8 Pin Configuration of 6ED003L06-F2 and 6ED003L02-F2 ................................................................... 9 Input pin structure............................................................................................................................... 10 Input filter timing diagram ................................................................................................................... 10 EN pin structures ................................................................................................................................ 10 FAULT pin structures ......................................................................................................................... 11 Timing of short pulse suppression ..................................................................................................... 17 Timing of internal deadtime ................................................................................................................ 17 Enable delay time definition ............................................................................................................... 17 Input to output propagation delay times and switching times definition ............................................. 18 Operating areas.................................................................................................................................. 18 ITRIP-Timing ...................................................................................................................................... 18 Package drawing ................................................................................................................................ 19 PCB reference layout ......................................................................................................................... 19 Package drawing ................................................................................................................................ 20 PCB reference layout (according to JEDEC 1s0P) left: Reference layout right: detail of footprint20 5 <Revision 2.5>, 21.01.2013 EiceDRIVER(TM) 6ED003L06-F2, 6ED003L02-F2 List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 datasheet nd Members of 6ED family - 2 generation ............................................................................................. 7 Pin Description ..................................................................................................................................... 9 Abs. maximum ratings ........................................................................................................................ 12 Required Operation Conditions .......................................................................................................... 13 Operating range ................................................................................................................................. 13 Static parameters ............................................................................................................................... 14 Dynamic parameters .......................................................................................................................... 16 Data of reference layout ..................................................................................................................... 20 6 <Revision 2.5>, 21.01.2013 EiceDRIVER(TM) 6ED003L06-F2, 6ED003L02-F2 EiceDRIVERTM 3 phase 600 V gate drive IC 1 Overview Main features Thin-film-SOI-technology Maximum blocking voltage +600V Separate control circuits for all six drivers CMOS and LSTTL compatible input (negative logic) Signal interlocking of every phase to prevent cross-conduction Detection of over current and under voltage supply externally programmable delay for fault clear after over current PG-DSO28 PG-TSSOP28 detection Product highlights Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology 'shut down' of all switches during error conditions Typical applications Home appliances Fans, pumps General purpose drives Product family Table 1 nd Members of 6ED family - 2 Sales Name 6ED003L06-F2 / 6ED003L02-F2 generation high side control input HIN1,2,3 and LIN1,2,3 typ. UVLOThresholds Bootstrap Package diode negative logic 11.7 V / 9.8 V No DSO28 / TSSOP28 Description The devices are full bridge drivers to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up may occur at all temperatures and voltage conditions. The six independent drivers are controlled at the low-side using CMOS resp. LSTTL compatible signals, down to 3.3 V logic. The device includes an under-voltage detection unit with hysteresis characteristic and an overcurrent detection. The over-current level is adjusted by choosing the resistor value and the threshold level at pin ITRIP. Both error conditions (under-voltage and over-current) lead to a definite shut down of all six switches. An error signal is provided at the FAULT open drain output pin. The blocking time after over-current can be adjusted with an RC-network at pin RCIN. The input RCIN owns an internal current source of 2.8 A. Therefore, the resistor RRCIN is optional. The typical output current can be given with 165 mA for pull-up and 375 mA for pull down. Because of system safety reasons a 310 ns interlocking time has been realised. The function of input EN can optionally be extended with an over-temperature detection, using an external NTC-resistor (see Fig.1). datasheet 7 <Revision 2.5>, 21.01.2013 EiceDRIVER(TM) 6ED003L06-F2, 6ED003L02-F2 DC-Bus VCC VCC HIN1,2,3 LIN1,2,3 EN HIN1,2,3 LIN1,2,3 EN VB1,2,3 HO1,2,3 To Load VS1,2,3 5V FAULT FAULT LO1,2,3 RRCIN CRCIN COM RCIN ITRIP VSS R Sh VSS Figure 1 2 Typical Application Blockdiagram BIAS NETWORK / VDD2 INPUT NOISE FILTER HIN1 LIN1 INPUT NOISE FILTER HIN2 INPUT NOISE FILTER LIN2 INPUT NOISE FILTER HIN3 INPUT NOISE FILTER LIN3 INPUT NOISE FILTER EN INPUT NOISE FILTER VB1 BIAS NETWORK - VB1 DEADTIME & SHOOT-THROUGH PREVENTION LATCH z HV LEVEL-SHIFTER + REVERSE-DIODE COMPAR ATOR UVDETECT GateDrive HO1 VS1 VB2 BIAS NETWORK - VB2 DEADTIME & SHOOT-THROUGH PREVENTION LATCH HV LEVEL-SHIFTER + REVERSE-DIODE COMPAR ATOR UVDETECT GateDrive HO2 VS2 VB3 BIAS NETWORK / VB3 DEADTIME & SHOOT-THROUGH PREVENTION LATCH HV LEVEL-SHIFTER + REVERSE-DIODE COMPAR ATOR UVDETECT GateDrive HO3 VS3 >1 ITRIP VCC UVDETECT DELAY VSS / COM LEVELSHIFTER GateDrive LO1 DELAY VSS / COM LEVELSHIFTER GateDrive LO2 DELAY VSS / COM LEVELSHIFTER GateDrive LO3 INPUT NOISE FILTER S VDD2 Q SET DOMINANT LATCH R IRCIN RCIN COM FAULT VSS >1 Figure 2 datasheet Block diagram for 6ED003L06-F2 / 6ED003L02-F2 8 <Revision 2.5>, 21.01.2013 EiceDRIVER(TM) 6ED003L06-F2, 6ED003L02-F2 Pin configuration, description, and functionality 1 VCC VB1 2 HIN1 HO1 27 3 HIN2 VS1 26 4 HIN3 nc 25 5 LIN1 VB2 24 6 LIN2 HO2 23 7 LIN3 VS2 22 nc 21 VB3 20 8 FAULT 9 ITRIP 10 EN HO3 19 11 RCIN VS3 18 12 VSS Figure 3 Table 2 28 nc 17 13 COM LO1 16 14 LO3 LO2 15 Pin Configuration of 6ED003L06-F2 and 6ED003L02-F2 Pin Description Symbol Description VCC Low side power supply VSS Logic ground /HIN1,2,3 High side logic input /LIN1,2,3 Low side logic input /FAULT Indicates over-current and under-voltage (negative logic, open-drain output) EN Enable I/O functionality (positive logic) ITRIP Analog input for over-current shut down, activates FAULT and RCIN to VSS RCIN External RC-network to define FAULT clear delay after FAULT-Signal (TFLTCLR) COM Low side gate driver reference VB1,2,3 High side positive power supply HO1,2,3 High side gate driver output VS1,2,3 High side negative power supply LO1,2,3 Low side gate driver output nc Not connected 2.1 Low Side and High Side Control Pins (Pin 2, 3, 4, 5, 6, 7) The Schmitt trigger input threshold of them are such to guarantee LSTTL and CMOS compatibility down to 3.3 V controller outputs. Input Schmitt trigger and noise filter provide beneficial noise rejection to short input pulses according to Figure 4 and Figure 5. Vcc Schmitt-Trigger HINx LINx INPUT NOISE FILTER UZ=10.5V SWITCH LEVEL VIH; VIL datasheet 9 <Revision 2.5>, 21.01.2013 EiceDRIVER(TM) 6ED003L06-F2, 6ED003L02-F2 Figure 4 Input pin structure An internal pull-up of about 75 k (negative logic) pre-biases the input during supply start-up and a ESD zener clamp is provided for pin protection purposes. The zener diodes are therefore designed for single pulse stress only and not for continuous voltage stress over 10V. tFILIN tFILIN LIN on HIN off HIN LIN on off on off high HO LO LO HO Figure 5 low Input filter timing diagram It is anyway recommended for proper work of the driver not to provide input pulse-width lower than 1 s. The 6ED-F2 driver IC provide additionally a shoot through prevention capability which avoids the simultaneous on-state of two channels of the same leg (i.e. HO1 and LO1, HO2 and LO2, HO3 and LO3). When two inputs of a same leg are activated, only one leg output is activated, so that the leg is kept steadily in a safe state. Please refer to the application note AN-Gatedrive-6ED2-1 for a detailed description. A minimum dead time insertion of typ. 310 ns is also provided, in order to reduce cross-conduction of the external power switches. 2.2 EN (Gate Driver Enable, Pin 10) The signal applied to pin EN controls directly the output stages. All outputs are set to LOW, if EN is at LOW logic level. The internal structure of the pin is given in Figure 6. The switching levels of the Schmitt-Trigger are here VEN,TH+ = 2.1 V and VEN,TH- = 1.3 V. The typical propagation delay time is tEN = 780 ns. There is an internal pull down resistor (75 k), which keeps the gate outputs off in case of broken PCB connection. IEN+, IEN- EN INPUT NOISE FILTER VEN,TH+, VEN,TH- VZ= 10.5 V 6ED family - 2nd generation Figure 6 2.3 EN pin structures /FAULT (Fault Feedback, Pin 8) /Fault pin is an active low open-drain output indicating the status of the gate driver (see Figure 7). The pin is active (i.e. forces LOW voltage level) when one of the following conditions occur: Under-voltage condition of VCC supply: In this case the fault condition is released as soon as the supply voltage condition returns in the normal operation range (please refer to VCC pin description for more details). Over-current detection (ITRIP): The fault condition is latched until current trip condition is finished and RCIN input is released (please refer to ITRIP pin). VDD FAULT datasheet 6ED family - 2nd generation VCC RON,FLT >1 10 from ITRIP-Latch from uv-detection <Revision 2.5>, 21.01.2013 EiceDRIVER(TM) 6ED003L06-F2, 6ED003L02-F2 Figure 7 2.4 /FAULT pin structures ITRIP and RCIN (Over-Current Detection Function, Pin 9, 11) nd The 6ED family - 2 generation provides an over-current detection function by connecting the ITRIP input with the motor current feedback. The ITRIP comparator threshold (typ 0.44 V) is referenced to VSS ground. A input noise filter (typ. tITRIPMIN = 230 ns) prevents the driver to detect false over-current events. Over-current detection generates a hard shut down of all outputs of the gate driver and provides a latched fault feedback at /FAULT pin. RCIN input/output pin is used to determine the reset time of the fault condition. As soon as ITRIP threshold is exceeded the external capacitor connected to RCIN is fully discharged. The capacitor is then recharged by the RCIN current generator when the over-current condition is finished. As soon as RCIN voltage exceeds the rising threshold of typ VRCIN,TH = 5.2 V, the fault condition releases and the driver returns operational following the ontrol input pins according to section 2.1. Please refer to AN-Gatedrive-6ED2-1 for details on setting RCIN time constant. 2.5 VCC, VSS and COM (Low Side Supply, Pin 1, 12,13) VCC is the low side supply and it provides power both to input logic and to low side output power stage. Input logic is referenced to VSS ground as well as the under-voltage detection circuit. Output power stage is referenced to COM ground. COM ground is floating respect to VSS ground with a maximum range of operation of +/-5.7 V. A back-to-back zener structure protects grounds from noise spikes. The under-voltage circuit enables the device to operate at power on when a typical supply voltage higher than VCCUV+ is present. The IC shuts down all the gate drivers power outputs, when the VCC supply voltage is below VCCUV- = 9.8 V. This prevents the external power switches from critically low gate voltage levels during on-state and therefore from excessive power dissipation. Please consult the individual output characteristic of the driven transistor. 2.6 VB1,2,3 and VS1,2,3 (High Side Supplies, Pin 18, 20, 22, 24, 26, 28) VB to VS is the high side supply voltage. The high side circuit can float with respect to VSS following the external high side power device emitter/source voltage. Due to the low power consumption, the floating driver stage can be supplied by bootstrap topology connected to VCC. The device operating area as a function of the supply voltage is given in Figure 12. Details on bootstrap supply section and transient immunity can be found in application note AN-Gatedrive-6ED2-1. 2.7 LO1,2,3 and HO1,2,3 (Low and High Side Outputs, Pin 14, 15, 16, 19, 23, 27) Low side and high side power outputs are specifically designed for pulse operation such as gate drive of IGBT and MOSFET devices. Low side outputs (i.e. LO1,2,3) are state triggered by the respective inputs, while high side outputs (i.e. HO1,2,3) are edge triggered by the respective inputs. In particular, after an under voltage condition of the VBS supply, a new turn-on signal (edge) is necessary to activate the respective high side output, while after a under voltage condition of the VCC supply, the low side outputs switch to the state of their respective inputs. datasheet 11 <Revision 2.5>, 21.01.2013 EiceDRIVER(TM) 6ED003L06-F2, 6ED003L02-F2 3 Electrical Parameters 3.1 Absolute Maximum Ratings All voltages are absolute voltages referenced to VSS -potential unless otherwise specified. (Ta=25C) Table 3 Abs. maximum ratings Parameter High side offset voltage(Note 1) DSO28 TSSOP28 Symbol VS High side offset voltage (tp<500ns, Note 1) High side offset voltage(Note 1) Min. Max. Unit VCC-VBS-6 600 180 V VCC -VBS - 50 - DSO28 TSSOP28 VB High side offset voltage (tp<500ns, Note 1) VCC - 6 620 200 VCC - 50 - High side floating supply voltage (VB vs. VS) (internally clamped) VBS -1 20 High side output voltage (VHO vs. VS) VHO -0.5 VB + 0.5 Low side supply voltage (internally clamped) Low side supply voltage (VCC vs. VCOM) VCC -1 20 VCCOM -0.5 25 Gate driver ground Low side output voltage (VLO vs. VCOM) VCOM -5.7 VLO -0.5 5.7 VCCOM + 0.5 Input voltage /LIN, /HIN, EN, ITRIP VIN -1 FAULT output voltage VFLT -0.5 RCIN output voltage VRCIN VCC + 0.5 TJ -0.5 - - - - - Storage temperature TS - 40 150 offset voltage slew rate (Note 3) dVS/dt Power dissipation (to package) Note 2 Thermal resistance (junction to ambient, see section 5) Junction temperature DSO28 TSSOP28 DSO28 TSSOP28 PD Rth(j-a) 10 VCC + 0.5 1.3 0.6 75 165 125 50 W K/W C V/ns Note :The value for ESD immunity is 1.0kV (Human Body Model). ESD immunity for pins inside the low side (i.e. VCC, /HINx, /LINx, FAULT, EN, RCIN, ITRIP, VSS, COM, LOx) and ESD immunity for pins inside each high side itself (i.e. VBx, HOx, VSx) is guaranteed up to 1.5kV (Human Body Model). Note 1 : Insensitivity of bridge output to negative transient voltage up to -50V is not subject to production test - verified by design / characterization. External bootstrap diode is mandatory. Refer to application note. Note 2: Consistent power dissipation of all outputs. All parameters inside operating range. Note 3: Not subject of production test, verified by characterisation datasheet 12 <Revision 2.5>, 21.01.2013 EiceDRIVER(TM) 6ED003L06-F2, 6ED003L02-F2 3.2 Required operation conditions All voltages are absolute voltages referenced to VSS -potential unless otherwise specified. (Ta = 25C) Table 4 Required Operation Conditions Parameter High side offset voltage (Note 1) DSO28 TSSOP28 Low side supply voltage (VCC vs. VCOM) DSO28 TSSOP28 3.3 Symbol VB Min. Max. Unit 7 620 200 V VCCOM 10 25 Operating Range All voltages are absolute voltages referenced to VSS -potential unless otherwise specified. (Ta = 25C) Table 5 Operating range Parameter Symbol VS Min. VCC VBS -1 High side floating supply offset voltage (VB vs. VCC, statically) VBCC -1.0 High side floating supply voltage (VB vs. VS, Note 1) VBS 13 High side output voltage (VHO vs. VS) VHO 10 17.5 VBS Low side output voltage (VLO vs. VCOM) VLO 0 VCC Low side supply voltage VCC 13 17.5 Low side ground voltage VCOM -2.5 2.5 Logic input voltages /LIN, /HIN, EN, ITRIP (Note 2) VIN 0 FAULT output voltage VFLT 0 5 VCC RCIN input voltage VRCIN 0 VCC Pulse width for ON or OFF (Note 3) tIN 1 - s Ambient temperature Ta -40 95 C High side floating supply offset voltage Max. Unit V 500 500 Note 1 : Logic operational for VB (VB vs. VSS) > 7,0V Note 2 : All input pins (/HINx, /LINx) and EN, ITRIP pin are internally clamped (see abs. maximum ratings) Note 3 : In case of input pulse width at /LINx and /HINx below 1s the input pulse may not be transmitted properly datasheet 13 <Revision 2.5>, 21.01.2013 EiceDRIVER(TM) 6ED003L06-F2, 6ED003L02-F2 3.4 Static logic function table VCC VBS RCIN ITRIP ENABLE FAULT LO1,2,3 HO1,2,3 <VCCUV- X X X X 0 0 0 15V <VBSUV- X 0 3.3 V High imp /LIN1,2,3 0 15V 15V <3.2 V 0 3.3 V 0 0 0 15V 15V X > VIT,TH+ 3.3 V 0 0 0 15V 15V > VRCIN,TH 0 3.3 V High imp /LIN1,2,3 /HIN1,2,3 15V 15V > VRCIN,TH 0 0 High imp 0 0 3.5 Static parameters VCC = VBS = 15V unless otherwise specified. (Ta=25C) Table 6 Static parameters Parameter Symbol Values Unit Min. Typ. Max. Test condition High level input voltage VIH 1.7 2.1 2.4 Low level input voltage VIL 0.7 0.9 1.1 EN positive going threshold VEN,TH+ 1.9 2.1 2.3 EN negative going threshold VEN,TH- 1.1 1.3 1.5 ITRIP positive going threshold VIT,TH+ 380 445 510 mV ITRIP input hysteresis VIT,HYS 45 70 RCIN positive going threshold VRCIN,TH - 5.2 6.4 V RCIN input hysteresis VRCIN,HYS - 2.0 - Input clamp voltage (/HIN, /LIN, EN, ITRIP) Input clamp voltage at high impedance (/HIN, /LIN) VIN,CLMAP 9 10.3 12 IIN = 4mA VIN,FLOAT - 5.3 5.8 controller output pin floating High level output voltage LO1,2,3 HO1,2,3 VOH - VCC -0.7 VCC -1.4 VB -0.7 VB -1.4 IO = 20mA Low level output voltage LO1,2,3 VOL - VCOM+ 0.6 VS + 0.6 IO = -20mA 12.5 HO1,2,3 VCC and VBS supply undervoltage positive going threshold VCC and VBS supply undervoltage negative going threshold - VCOM+ 0.2 VS+ 0.2 VCCUV+ VBSUV+ VCCUV- VBSUV- 11 11.7 9.5 9.8 VCC and VBS supply undervoltage lockout hysteresis VCCUVH VBSUVH 1.2 1.9 datasheet 14 10.8 V V - <Revision 2.5>, 21.01.2013 EiceDRIVER(TM) 6ED003L06-F2, 6ED003L02-F2 Table 6 Static parameters Parameter Symbol Values Unit Test condition A VS = 600V TJ = 125C, VS = 600V Min. Typ. Max. High side leakage current betw. VS and VSS ILVS+ 1 High side leakage current betw. VS and VSS ILVS+ - 1 12.5 - 10 - High side leakage current between VSx and ILVS- VSy (x=1,2,3 and y=1,2,3) IQBS1 Quiescent current VBS supply (VB only) 1 - 10 - - 210 400 Quiescent current VBS supply (VB only) IQBS2 - 210 400 Quiescent current VCC supply (VCC only) IQCC1 - 1.1 1.8 Quiescent current VCC supply (VCC only) IQCC2 - 1.3 2 Input bias current ILIN+ - 70 100 A VLIN=3.3 V Input bias current ILIN- - 110 200 A VLIN=0 Input bias current IHIN+ - 70 100 VHIN=3.3 V Input bias current IHIN- - 110 200 VHIN=0 Input bias current (ITRIP=high) IITRIP+ 45 120 VITRIP=3.3 V Input bias current (EN=high) IEN+ 45 120 VENABLE=3.3 V Input bias current RCIN (internal current source) Mean output current for load capacity charging in range from 3 V (20%) to 6 V (40%) IRCIN Peak output current turn on (single pulse) IOpk+1 IO+ IO- Mean output current for load capacity discharging in range from 12 V (80%) to 9 V (60%) IOpk-1 Peak output current turn off (single pulse) - TJ = 125C VSx - VSy = 600V A HO=low mA HO=high VLIN=float. VLIN=0, VHIN=3.3 V VRCIN = 2 V 2.8 120 165 - 375 CL=10 nF RL = 0 , tp <10 s 240 250 mA - CL=10 nF RL = 0 , tp <10 s 420 RCIN low on resistance of the pull down transistor Ron,RCIN - 40 100 VRCIN=0.5 V FAULT low on resistance of the pull down transistor Ron,FLT - 45 100 VFAULT=0.5 V 1 Not subject of production test, verified by characterisation datasheet 15 <Revision 2.5>, 21.01.2013 EiceDRIVER(TM) 6ED003L06-F2, 6ED003L02-F2 3.6 Dynamic parameters VCC = VBS = 15 V, VS = VSS = VCOM unless otherwise specified. (TA=25C) Table 7 Dynamic parameters Parameter Symbol Values Min. Typ. Max. Unit Test condition ns VLIN/HIN = 0 or 3.3 V Turn-on propagation delay Turn-off propagation delay ton toff 400 360 530 490 800 760 Turn-on rise time tr - 60 100 Turn-off fall time tf - 26 45 VLIN/HIN = 0 or 3.3 V CL = 1 nF Shutdown propagation delay ENABLE tEN - 780 1100 VEN=0 Shutdown propagation delay ITRIP tITRIP 400 670 1000 VITRIP=1 V Input filter time ITRIP tITRIPMIN 155 230 380 Propagation delay ITRIP to FAULT tFLT - 420 700 120 300 - Input filter time at LIN/HIN for turn on and off tFILIN tFILEN Input filter time EN VLIN/HIN = 0 & 3.3 V 300 600 - Fault clear time at RCIN after ITRIP-fault, (CRCin=1nF) tFLTCLR 1.0 1.9 3.0 ms VLIN/HIN = 0 & 3.3 V VITRIP = 0 Dead time DT 150 310 - ns VLIN/HIN = 0 & 3.3 V Matching delay ON, max(ton)-min(ton), ton are applicable to all 6 driver outputs MTON - 20 100 external dead time > 500 ns - 40 100 external dead time >500 ns 40 100 PW in > 1 s Matching delay OFF, max(toff)-min(toff), toff MTOFF are applicable to all 6 driver outputs Output pulse width matching. Pwin-PW out PM datasheet 16 <Revision 2.5>, 21.01.2013 EiceDRIVER(TM) 6ED003L06-F2, 6ED003L02-F2 4 Timing diagrams tFILIN HIN/LIN tFILIN tIN HIN/LIN tIN tIN < tFILIN tIN < tFILIN high HO/LO low HO/LO HIN/LIN tIN HIN/LIN tIN tIN > tFILIN tIN > tFILIN HO/LO Figure 8 HO/LO Timing of short pulse suppression LIN1,2,3 2.5V 2.5V HIN1,2,3 12V HO1,2,3 3V DT DT 12 V LO1,2,3 3V Figure 9 Timing of internal deadtime EN tEN HO1,2,3 LO1,2,3 Figure 10 datasheet 3V Enable delay time definition 17 <Revision 2.5>, 21.01.2013 EiceDRIVER(TM) 6ED003L06-F2, 6ED003L02-F2 PWIN LIN1,2,3 1.65V 1.65V HIN1,2,3 ton toff tr 12V tf 12V HO1,2,3 LO1,2,3 3V Figure 11 3V PWOUT Input to output propagation delay times and switching times definition 20 V 17.5 VCCMAX , VBSMAX vCC vBS 13 VCCUV+, VBSUV+ 11.7 VCCUV-, VBSUV- 9.8 t IC STATE OFF Figure 12 ON ON Recommended Area ON Forbidden Area ON ON Recommended Area ON OFF Operating areas VRCIN,TH RCIN ITRIP 0.1V 0.1V FAULT Any output Figure 13 datasheet 1V 0.5V tFLT tFLTCLR 3V tITRIP ITRIP-Timing 18 <Revision 2.5>, 21.01.2013 EiceDRIVER(TM) 6ED003L06-F2, 6ED003L02-F2 5 Package 5.1 PG-DSO-28 Figure 14 Figure 15 datasheet Package drawing Dimensions 80.0 80.0 1.5 mm therm [W/mK] Material FR4 0.3 Metal (Copper) 70m 388 PCB reference layout 19 <Revision 2.5>, 21.01.2013 EiceDRIVER(TM) 6ED003L06-F2, 6ED003L02-F2 5.2 PG-TSSOP-28 Footprint for Reflow soldering e = 0.65 A = 6.10 L = 1.30 B = 0.40 Figure 16 Package drawing Figure 17 PCB reference layout (according to JEDEC 1s0P) left: Reference layout right: detail of footprint Table 8 Data of reference layout Dimensions Material Metal (Copper) 76.2 114.3 1.5 mm FR4 (therm = 0.3 W/mK) 70m (therm = 388 W/mK) datasheet 20 <Revision 2.5>, 21.01.2013 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG