R09DS0038EJ0100 Rev.1.00 Page 1 of 8
Apr 18, 2012
Data Sheet
NE3516S02
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
FEATURES
• Low noise figure and high associated gain
NF = 0.35 dB TYP., Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA
NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 6 mA (Reference Value)
• 4-pin Micro-X plastic (S02) package
APPLICATIONS
• X to Ku band DBS LNB
• Other Ku band communication system
ORDERING INFORMATION
Part Number Order Number Package Quantity Marking Supplying Form
NE3516S02-T1C NE3516S02-T1C-A 2 kpcs/reel
NE3516S02-T1D NE3516S02-T1D-A
S02
package
(Pb-Free) 10 kpcs/reel
P • 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3516S02
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Drain to Source Voltage VDS 4.0 V
Gate to Source Voltage VGS –3.0 V
Drain Current ID I
DSS mA
Gate Current IG 100
μ
A
Total Power Dissipation Note P
tot 165 mW
Channel Temperature Tch +125 °C
Storage Temperature Tstg –65 to +125 °C
Note: Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter Symbol MIN. TYP. MAX. Unit
Drain to Source Voltage VDS +1 +2 +3 V
Drain Current ID 5 10 15 mA
Input Power Pin – – 0 dBm
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0038EJ0100
Rev.1.00
Apr 18, 2012
NE3516S02
R09DS0038EJ0100 Rev.1.00 Page 2 of 8
Apr 18, 2012
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Gate to Source Leak Current IGSO V
GS = −3.0 V − 0.5 10
μ
A
Saturated Drain Current IDSS V
DS = 2 V, VGS = 0 V 15 30 60 mA
Gate to Source Cut-off Voltage VGS(off) V
DS = 2V, ID = 100
μ
A −0.2 −0.5 −1.3 V
Transconductance gm VDS = 2 V, ID = 10 mA 55 65 − mS
Noise Figure NF − 0.35 0.50 dB
Associated Gain Ga VDS = 2 V, ID = 10 mA, f = 12 GHz 13 14 − dB
STANDARD CHARACTERISTICS FOR REFERENCE
(TA = +25°C, unless otherwise specified)
Parameter Symbol Test Conditions Reference Value Unit
Noise Figure NF 0.35 dB
Associated Gain Ga VDS = 2 V, ID = 6 mA, f = 12 GHz
13.5 dB
NE3516S02
R09DS0038EJ0100 Rev.1.00 Page 3 of 8
Apr 18, 2012
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
250
100
200
150
0
050 100 150 200 250
Total Power Dissipation P
tot
(mW)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Eploxy PCB
(1.08 cm
2
× 1.0 mm (t) )
Ambient Temperature T
A
(°C)
50
Drain Current I
D
(mA)
Minimum Noise Figure NF
min
(dB)
Associated Gain G
a
(dB)
ASSOCIATED GAIN vs. DRAIN CURRENT
MINIMUM NOISE FIGURE,
f = 12 GHz
V
DS
= 2 V
NF
min
G
a
0.8
0.9
1.2
0.5
0.6
0.7
0.3
0.4
0.221210864
1.0
1.1
12
13
16
9
10
11
7
8
6
14
15
165
Drain Current I
D
(mA)
Drain to Source Voltage V
DS
(V)
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
V
GS
= 0 V
–0.3 V
–0.1 V
–0.4 V
60
50
40
30
20
10
0
0.00 1.00 2.00 3.00 4.00
–0.2 V
Drain Current I
D
(mA)
Gate to Source Voltage V
GS
(V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
DS
= 2 V
60
50
40
30
20
10
0
–0.8 –0.6 –0.4 –0.2 0
Remark The graph indicates nominal characteristics.
NE3516S02
R09DS0038EJ0100 Rev.1.00 Page 4 of 8
Apr 18, 2012
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import to
microwave circuit simulators without keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/download/parameter/
NE3516S02
R09DS0038EJ0100 Rev.1.00 Page 5 of 8
Apr 18, 2012
RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm)
13.0
2.80
L2–uX Ver. 1
1.7 mm/R.P.
2.60
2.06
2.6
1.7 1.7
Reference Plane
(Calibration Plane)
Reference Plane
(Calibration Plane)
6.0
0.64
0.74
2.06
0.54
0.3 TH
φ
RT/duroid 5880/ROGERS
t = 0.254 mm
εr = 2.20
tan delta = 0.0009 @10 GHz
NE3516S02
R09DS0038EJ0100 Rev.1.00 Page 6 of 8
Apr 18, 2012
PACKAGE DIMENSIONS
S02 (UNIT: mm)
(Top View)
(Side View)
(Bottom View)
0.5 TYP.
2.6±0.1
0.65 TYP.
3.2±0.2
1
2
3
4
2.2±0.2
3.2±0.2
1.7
1.5 MAX.
0.15±0.05
3
4
1
2
2.2±0.2
2.2±0.2
PIN CONNECTIONS
1. Source
2. Drain
3. Source
4. Gate
P
NE3516S02
R09DS0038EJ0100 Rev.1.00 Page 7 of 8
Apr 18, 2012
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, co ntact your nearby sales office.
Soldering Method Soldering Conditions Condition Symbol
Infrared Reflow Peak temperature (package surface temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Time at temperature of 220°C or higher : 60 seconds or less
Preheating time at 120 to 180°C : 120±30 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
IR260
Partial Heating Peak temperature (terminal temperature) : 350°C or below
Soldering time (per side of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2% (W t.) or belo w
HS350
CAUTION
Do not use different soldering methods together (except for partial h eating).
NE3516S02
R09DS0038EJ0100 Rev.1.00 Page 8 of 8
Apr 18, 2012
Caution GaAs Products This product use s gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History NE3516S02 Data Sheet
Description
Rev. Date Page Summary
1.00 Apr 18, 2012 – First edition issued
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