AP9926GEO RoHS-compliant Product Advanced Power Electronics Corp. Low On-resistance DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET G2 S2 Capable of 2.5V Gate Drive D2 Low Drive Current S2 TSSOP-8 S1 G1 S1 BVDSS 20V RDS(ON) 28m ID D1 4.6A Surface Mount Package RoHS Compliant Description D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 D2 G2 S1 S2 Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 20 V + 12 V 3 4.6 A 3 3.7 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current 20 A PD@TA=25 Total Power Dissipation 1 W Linear Derating Factor 0.008 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 125 /W 1 201208082 AP9926GEO Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. 20 - - V VGS=4.5V, ID=4A - - 28 m VGS=2.5V, ID=2A - - 40 m 0.5 - - V VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=10V, ID=4.6A - 9.7 - S IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 C) VDS=20V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+10 V, VDS=0V - - +10 uA Qg Total Gate Charge ID=4.6A - 12.5 - nC Qgs Gate-Source Charge VDS=20V - 1 - nC Qgd Gate-Drain ("Miller") Charge VGS=5V - 6.5 - nC td(on) Turn-on Delay Time VDS=10V - 5 - ns tr Rise Time ID=1A - 9 - ns td(off) Turn-off Delay Time RG=3.3 - 26.2 - ns tf Fall Time VGS=5V - 6.8 - ns Ciss Input Capacitance VGS=0V - 355 - pF Coss Output Capacitance VDS=20V - 190 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF Min. Typ. VD=VG=0V,VS=1.2V - - 0.83 A Tj=25,IS=1.25A,VGS=0V - - 1.2 V o Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) 2 Forward On Voltage Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 208/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9926GEO 24 25 T C =25 o C 15 18 ID , Drain Current (A) ID , Drain Current (A) 20 4.5V 4.0V 3.5V 3.0V T C =150 o C 4.5V 4.0V 3.5V 3.0V 2.5V 10 V G =2.0V 2.5V 12 V G =2.0V 6 5 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 V DS , Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 40 I D = 4A T A =25 o C I D = 4A V G =4.5V 1.4 Normalized RDS(ON) RDS(ON) (m ) 35 30 1.2 1.0 25 0.8 20 0.6 2 3 4 5 -50 V GS , Gate-to-Source Voltage (V) 0 50 100 150 T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance 100 1.4 1 T j =150 o C VGS(th) (V) IS (A) 10 T j =25 o C 1.0 0.6 0.1 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 0.2 0.01 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9926GEO f=1.0MHz 10 1000 VGS , Gate to Source Voltage (V) I D =4.6A 8 C iss V DS =10V V DS =15V V DS =20V C oss C (pF) 6 4 100 C rss 2 10 0 0 5 10 15 20 1 25 5 9 Q G , Total Gate Charge (nC) 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (R thja) 100 100us 10 1ms ID (A) 13 10ms 1 100ms 0.1 1s o T A =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 PDM 0.01 t 0.01 Single Pulse T Duty Factor = t/T Peak Tj = P DM x Rthja + Ta DC Rthja=208oC/W 0.01 0.001 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4