Advanced Power DUAL N-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET
▼ Low On-resistance BVDSS 20V
▼ Capable of 2.5V Gate Drive RDS(ON) 28mΩ
▼ Low Drive Current ID4.6A
▼ Surface Mount Package
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3125 ℃/W
Data and specifications subject to change without notice
Thermal Data Parameter
Storage Temperature Range
Total Power Dissipation 1
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.008
Continuous Drain Current33.7
Pulsed Drain Current120
Gate-Source Voltage + 12
Continuous Drain Current34.6
Parameter Rating
Drain-Source Voltage 20
RoHS-compliant Product
1
AP9926GEO
201208082
D2 S2 S2 G2
D1 S1 S1
G1
TSSOP-8
S1
G1
D1
S2
G2
D2
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=4.5V, ID=4A - - 28 mΩ
VGS=2.5V, ID=2A - - 40 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - - V
gfs Forward Transconductance VDS=10V, ID=4.6A - 9.7 - S
IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=20V ,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=+10 V, VDS=0V - - +10 uA
QgTotal Gate Charge ID=4.6A - 12.5 - nC
Qgs Gate-Source Charge VDS=20V - 1 - nC
Qgd Gate-Drain ("Miller") Charge VGS=5V - 6.5 - nC
td(on) Turn-on Delay Time VDS=10V - 5 - ns
trRise Time ID=1A - 9 - ns
td(off) Turn-off Delay Time RG=3.3Ω- 26.2 - ns
tfFall Time VGS=5V - 6.8 - ns
Ciss Input Capacitance VGS=0V - 355 - pF
Coss Output Capacitance VDS=20V - 190 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V,VS=1.2V - - 0.83 A
VSD Forward On Voltage2Tj=25℃,IS=1.25A,VGS=0V - - 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9926GEO
AP9926GEO
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
20
25
30
35
40
2345
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D= 4A
TA=25oC
0
5
10
15
20
25
0.0 0.5 1.0 1.5 2.0 2.5
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC
VG=2.0V
4.5V
4.0V
3.5V
3.0V
2.5V
0
6
12
18
24
0.0 0.5 1.0 1.5 2.0 2.5
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150 oC
VG=2.0V
4.5V
4.0V
3.5V
3.0V
2.5V
0.6
0.8
1.0
1.2
1.4
1.6
-50 0 50 100 150
Tj , Junction Temperature (oC)
Normalized RDS(ON)
ID= 4A
VG=4.5V
0.01
0.1
1
10
100
0 0.4 0.8 1.2 1.6
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj=25oC
Tj=150 oC
0.2
0.6
1.0
1.4
-50 0 50 100 150
Tj , Junction Temperature (oC)
VGS(th) (V)
AP9926GEO
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
0.01
0.1
1
10
100
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
t , Pulse Width (s)
Normalized Thermal Response (Rthja)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=208oC/W
t
T
0.02
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0
2
4
6
8
10
0 5 10 15 20 25
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
VDS =10V
VDS =15V
VDS =20V
I
D=4.6A
10
100
1000
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
5V
QGS QGD
QG
Charge
