BU208D BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N) JEDEC TO-3 METAL CASE NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV 1 3 2 2 1 TO-3 ISOWATT218 DESCRIPTION The BU208D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. INTERNAL SCHEMATIC DIAGRAM For TO-3 : C = Tab E = Pin2. ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CES Collector-Emitter Voltage (V BE = 0) 1500 V V CEO Collector-Emitter Voltage (IB = 0) 700 V V EBO Emitter-Base Voltage (IC = 0) 10 V Collector Current 8 A Collector Peak Current (tp < 5 ms) 15 IC I CM Parameter TO - 3 P t ot Total Dissipation at Tc = 25 o C T stg St orage Temperature Tj Max. Operating Junction Temperature November 1999 A IS OW ATT 218 150 50 -65 to 175 -65 to 150 o W C 175 150 o C 1/7 BU208D / BU508DFI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case TO-3 ISO WATT218 1 2.5 Max o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO Parameter Test Cond ition s Collector Cut-off Current (V BE = 0) V CE = 1500 V V CE = 1500 V Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(sus ) Collector-Emitter Sustaining Voltage (I B = 0) Min. Typ . o Tj = 125 C I C = 100 m A Max. Un it 1 2 mA mA 300 mA 700 V V CE(sat ) Collector-Emitter Saturation Voltage I C = 4.5 A IB = 2 A 1 V V BE(s at) Base-Emitt er Saturation Voltage I C = 4.5 A IB = 2 A 1.3 V ts tf INDUCTIVE LO AD Storage Time Fall Time I C = 4.5 A hF E = 2.5 V CC = 140 V L C = 0.9 mH LB = 3 H VF Diode F orward Voltage I F = 4 A fT Transition Frequency I C = 0.1 A s ns 7 550 2 V CE = 5 V f = 5 MHz 7 Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area (TO-3) 2/7 Safe Operating Area (ISOWATT218) V MHz BU208D / BU508DFI DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Switching Time Inductive Load Switching Time Inductive Load (see figure 1) Switching Time Percentance vs. Case 3/7 BU208D / BU508DFI Figure 1: Inductive Load Switching Test Circuit. 4/7 BU208D / BU508DFI TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003F 5/7 BU208D / BU508DFI ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 mm TYP. MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 3.7 0.138 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 m 6/7 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.146 P025C/A BU208D / BU508DFI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 7/7