25C D Mmm 8235405 go04190 NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF 25C 04190 T MESIEG _- BC 546 ~ BC 550 D BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages (10 A 3 DIN 41868). They are intended for use in AF input and driver stages (BC 549; BC 550 for low-noise input stages) and as complementary transistors to BC 556, BC 557, BC 558, BC 559 and BC 560. Type Ordering code Type | Ordering code BC 5461) 0Q62702-C687 BC 5491) Q62702-c690 BC 546 VI Q62702-C687-V3 BC 549B Q62702-C690-V1 BC 546A Q62702-C687-V1 BC 549C 062702-C690-V2 BC 546B Q62702-C687-V2 BC 5501) 062702-c691 BC 5471) 062702-C688 BC 550B Q62702-C691-V1 BC 547 VI 062702-C688-V3 BC 550C 0Q62702-C691-v2 BC 547A 0Q62702-C688-V1 BC 5478 Q62702-Cc688-V2 2Smax, EBC BC 5481) 0Q62702-C689 0,4-0,4 1 bey ba BC 548 VI 0Q62702-C689-V4 a a BC 548A 062702-C689-V1 r es BC 548B Q62702-C689-V2 lyf elg2 fe og? be BC 548C 0Q62702-C689-V3 or a Mounting instruction: Fixing hole dia 0.6 Approx. weight 0.25 g Dimensions in mm TH2G-2/ Maximum ratings Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Base peak current Emitter-peak current Junction temperature Storage temperature range Total power dissipation (Tamb = 25C) Thermatresistance Junction to ambient air Junction to case 1) If the order does not include any exact indication of the current a BC 546/ BC 547/ BC 548 |BC 549] BC 550 Veso | 80 | 50 | 30 30 |50 |v Vees | 80 | 50 | 30 30 {50 |v Veco | 65 | 45 | 30 30 |45 |v Vego | 6 6 5 5 5 Vv Io 100 | 100 | 100 | 100 | 100 | ma Icom | 200 | 200 | 200 | 200 | 200 | ma Iam | 200 | 200 | 200 | 200 | 200 | ma lem | 200 | 200 | 200 | 200 | 200 | mA T; 150 | 150 | 150 | 150! 150 | c Tstg -65 to +150 C Prot | 500 | 500 | 500 | 500 | 500 | mw Rinsa | $250] $250| s250 | s250| s250| Kw Rinse | $150] $150] $150 | <150] <150| KW amplification group just available from stock will be delivered. 236 1666 G-09 mplification group desired, a transistor of a current 4 sabe RUC RE he HA As Hg er weasc > - 8235605 OOO4LSL 1 WESIEG 3 SIEMENS AKTIENGESELLSCHAF = 24-24 BC 546 - BC 550 Static characteristics (Tamp = 25C) The transistors are grouped in accordance with the DC current gain hee and are marked by A, B, and C. At Vcg = 5 V and the collector currents tabulated below the following static characteristics apply. Type BC 546 BC 546 BC 546 BC 548, BC 547 BC 547 BC 547,BC 549 | BC 549, BC 548 BC 548 BC 548,BC 550 | BC 550 hee group | VI A B Cc Ic hee he hee hee 0.01 90 150 270 2 110 180 290 500 (75 to 150) (110 to 220) (200 ta 450) (420 to 800) 100 120 200 400 Collector cutoff current (Vego = 30 V) Iepo $15 nA Collector cutoff current (Vepo = 30 V; Tamb = 150C) Icgo $5 uA Collector-emitter saturation voltage Uc =10mA; Ig = 0.5 mA) Voesat 90 (<250) mV (Ig = 100 mA; Ig = 5 mA) Voesat 200 (< 600) mV (Ig = 10 mA)? VeEsat 300 (< 600) mV Base-emitter saturation voltage?) (Ig = 10 mA; Ig = 0.5 mA) Veesat 700 mV (Ig = 100 mA; Ig = 5 mA) VeeEsat 900 mV Base-emitter voltage (Vcr = 5 V; Ig = 2 mA) Vee 660 (580 to 700) | mV Base-emitter voltage (Vee = 5 Vi Ig = 10 mA) Vee <720 mV 1) For the characteristic which passes through the point [c = 11 mA; VCE = 1 V at constant base current, 2) 4 Vase approx. = 1.7 mV/K:; = Ae approx. = 2 mV/K 237 1667. +~G-10 Fe RSE dan A ag FON alta LS a te = tae Ce a pe ard Wha Di ARH oe LD ate=. oe - 7 - RSC D = a235605 D004142 3 MESIEG,- 7 29-2 cur arg v' SIEMENS AKTIENGESELLSCHAF s-sBC B46 BC BGO BC 546 BC 547 Dynamic characteristics (Ta, = 25C) BC 548 BC 549 BC 550 Transition frequency Vee = 5 V3 Ig =10 mA; f=100MHz) f; 300 300 300 MHz Collector-base capacitance (Vepo =10V; f=1MHz) - Copo | 2.5(<4.5)| 2.6(<4.5)} 2.5(<4.5)| pF Emitter-base capacitance (Veno = 0.5 V; f = 1 MHz) Ceso | 9 9 9 pF Noise figure (Voce = 6 Vi Ig = 200 pA; Ag = 2 kQ; f =1kHz;A f = 200 Hz) NF 2 (<10) 1.2 (<4) | 1 (<4) dB Equivalent noise voltage (Voce = 5 V; Ig = 200 pA; Rg = 2 kQ; f= 10 to 50 Hz; Tamb = 25C) E, ~ <0.135 <0.135 | LV Dynamic characteristics (Tanp = 25C) Ig = 2 MA; Veg = 5 Vif = 1kHz | | | | Type BC 546 BC 546 BC 546 BC 548, BC 547 BC 547 BC547,BC549 | BC 549, | BC548 BC 548 BC548,BC550 | BC 550 hee group | VI A B Cc hie 1.2 (0.4 to 2.2) | 2.7 (1.6 to 4.5) | 4.5 (3.2 to 8.5) | 8.7 (6 to 15) | kQ Me 2.5 1.5 2 3 10-4 hate 110) | 220 330 600 - ho26 20 (<40) 18 (<30) 30 (<60) 60 (<110) LS 238 | . ,* ~ 1668 G-11 Rep ntiam ames @ con ae tA OE te35C ) MM 8235605 0004193 5 MESIEG arene BC 546 - BC 550 D SIEMENS AKTIENGESELLSCHAF T- 29-2] oraue So ware issipation Permissible putse load Prot = f (Tamb) KX fran = ft) v = parameter mW BC 546, BC 547, BC $48, BC 849, BC 550 W gc 646, BC 547, BC 548, BC 549, BC 550 500 10? Pot Anta 250 0 50 100 150C > lant DC current gain hee = f Uc) Vee = 5 V; Tamp = Parameter (common-emitter configuration) BC 546 6, BC 547 B, BC 548 B. BC 549 B, BC 550B 103 hee 10? 10! 198 10? 19! 10 10! 102 mA r Ip 1669s G=2 10 to? wo! wo wo? wot 0's | Collector currant /p = f (Vae} Vop =5V (common-emitter configuration) ma BC 546, BC 547, BC 548, BC 549, BC 550 0 > Vee 239 en ed ak can Laden babs ace HL ON ae ta Wa teat ae te bach abet A ae rnthdaete pad dae a8 feGuaae ae vem y Pb) wt bwBer ree wees SIEMENS AKTIENGESELLSCHAF 25C D MM 8235605 OOOULS4 27 MMSIEG -. -7-L7J~- 2 Do BC 546 - BC 550 Collector-emitter saturation voltage Voesat = f (ic); Ape = 20; Tamb = parameter (common-emitter configuration) BC 546, 8C 547, BC 548, BC 549, BC S50 f. Ol G2 03 Of O8 06 > Veesat Transition frequenay f; = f (Ic) Veg = parameter: Tamp = 25C MHz BC 646, BC 647, BC 548, BC 549, BC 550 eC fy 10? ig! 10" 10 10 107 ma ~ |, 240 G-13 1670 oman ment Collector-cutoff current versus temperature [egg = f (Tamp) for max. permissible reverse voltage _ nA BC 546, BC 547, BC 548, BC 549, BC 550 ve eet wih Slo me me, Seattering 0 50 ~ 100, 190C > hab Collector-basa capacitance Cog = f (Vega) Emitter-base capacitance Cego =f (Veno} pe BC 546, BC 547, BC 548, BC 549, BC 560 2 - ftaq C Ego 10 wo" to - ag'y > Veo Meno uFwar Wh LY)bD Uv STEMENS AKTIENGESELLSCHAF , BC 546 BC 550 h-parameter versus collector current Noise figure NF =f (Vee) H.= be Ce) =f (Ue) Ig = 0.2 mA; Ag = 2k; f = 1 KHz 0 hy (Te = 2 mA) Af = 200 Hz; Tamb = 28 C ma BC 848, BC 547, BC 648, BC 549, BCG 550 de BC 649, BC 550 10" ie 10mA 107 wv 1 10'v . - I, _ Vee Noise figure NF = f (fc) Nols figure NF = f (fc) Vog = Vif = 1 kHz Veg = 5 V;f = 120 Hz dB BC 49, BC 550 BC 649, BC 560 = = . 1 a 5 al wo 10 10 mA @ ow ow ww wma 1 od e I. 1671 6-14 . _ 244 25 D MM A23SL05 OOO4L9S 9 MMESIEG +2Qa_a] pa ati te