BZA856AL - NXP - Datasheet.Live

DATA SH EET

Product data sheet 2002 Jan 11

DISCRETE SEMICONDUCTORS

BZA800AL series

Quadruple ESD transient voltage

suppressor

ook, halfpage

MBD127

2002 Jan 11 2

NXP Semiconductors Product data sheet

Quadruple ESD transient voltage

suppressor BZA800AL series

FEATURES

•ESD rating >8 kV contact discharge, according to

IEC1000-4-2

•SOT353 (SC-88A) surface mount package

•Common anode configuration.

APPLICATIONS

•Computers and pe ripherals

•Audio and video eq uipment

•Communication syste ms.

DESCRIPTION

Monolithic transient voltage suppressor diode in a five lead

SOT353 (SC-88A) package for 4-bit wide ESD transie nt

suppression.

MARKING

PINNING

TYPE NUMBER MARKING CODE

BZA856AL M1

BZA862AL M2

BZA868AL M3

PIN DESCRIPTION

1cathode 1

2common anode

3cathode 2

4cathode 3

5cathode 4

handbook, halfpage

MGT580

Fig.1 Simplified outline (SOT353) and symbol.

LIMITING VALUES

In accordance with the A b solute Maximum Rating Sys tem (IEC 60134).

Notes

1. DC working current limite d by Ptot(max).

2. Device mounted o n standard printed-c ircuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

IZworking curr ent Tamb = 25 °C−note 1 mA

IFcontinuous forward current Tamb = 25 °C−200 mA

IFSM non-repetitive peak forward cu rr ent tp = 1 ms; square pulse −4 A

Ptot total power dissipation Tamb = 25 °C; note 2; see Fig.5 −300 mW

PZSM non repetitive peak reverse power

dissipation: square pulse; tp = 1 ms; see Fig.3

BZA856AL −16 W

BZA862AL −15 W

BZA868AL −14 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

2002 Jan 11 3

NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA800AL series

THERMAL CHARACTE RISTICS

Note

1. Solder point o f common anode (pin 2).

ELECTRICAL CHARACTERISTIC S

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient all diodes loaded 410 K/W

Rth j-s thermal resistance from junction to solder point;

note 1 one diode loaded 200 K/W

all diodes loaded 185 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VFforward voltage IF = 200 mA − − 1.3 V

IRreverse current

BZA856AL VR = 3 V − − 1 000 nA

BZA862AL VR = 4 V − − 500 nA

BZA868AL VR = 4.3 V − − 100 nA

VZworking voltage IZ = 1 mA

BZA856AL 5.32 5.6 5.88 V

BZA862AL 5.89 6.2 6.51 V

BZA868AL 6.46 6.8 7.14 V

rdif differential resistance IZ = 1 mA

BZA856AL − − 400 Ω

BZA862AL − − 300 Ω

BZA868AL − − 200 Ω

SZtemperatur e coe fficient IZ = 1 mA

BZA856AL −0.3 −mV/K

BZA862AL −1.6 −mV/K

BZA868AL −2.2 −mV/K

Cddiode capacitance f = 1 MHz; VR = 0

BZA856AL − − 125 pF

BZA862AL − − 105 pF

BZA868AL − − 90 pF

IZSM non-repetitive peak reverse current tp = 1 ms; Tamb = 25 °C

BZA856AL − − 2.2 A

BZA862AL − − 2.1 A

BZA868AL − − 2 A

2002 Jan 11 4

NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA800AL series

handbook, halfpage

10−1

MLD790

10−210−11tp (ms)

IZSM

(A)

BZA856AL

BZA862AL

BZA868AL

Fig.2 Maximum non-repetitive pea k re verse

current as a func tion of pulse time.

handbook, halfpage

102MLD791

10−210−11tp (ms)

PZSM

(W)

BZA856AL

BZA862ALBZA868AL

Fig.3 Maximum non-repetitive pea k re verse

power dissipation as a func tion of pulse

duration (squ are pulse).

PZSM = VZSM × IZSM.

VZSM is the non-repetitive peak reverse voltage at IZSM.

handbook, halfpage

02 VR (V)

(pF)

120

MLD792

BZA856AL

BZA862AL

BZA868AL

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

Tj = 25 °C; f = 1 MHz.

handbook, halfpage

050 Tamb (°C)

Ptot

(mW)

100 150

400

300

100

200

MLD793

Fig.5 Power derating curve.

2002 Jan 11 5

NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA800AL series

handbook, full pagewidth

MLD794

450 Ω

50 Ω

Note 1: attenuator is only used for open

socket high voltage measurements

IEC 61000-4-2 network

CZ = 150 pF; RZ = 330 Ω

1/4 BZA800AL

RG 223/U

50 Ω coax

ESD TESTER DIGITIZING

OSCILLOSCOPE

10×

ATTENUATOR

note 1

GND

unclamped +1 kV ESD voltage waveform

(IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform

(IEC 61000-4-2 network)

vertical scale = 100 V/div

horizontal scale = 50 ns/div

unclamped −1 kV ESD voltage waveform

(IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform

(IEC 61000-4-2 network)

vertical scale = 100 V/div

horizontal scale = 50 ns/div vertical scale = 5 V/div

horizontal scale = 50 ns/div

vertical scale = 5 V/div

horizontal scale = 50 ns/div

BZA868AL

BZA862AL

BZA856AL

Fig.6 ESD clamping test set-up an d waveforms.

2002 Jan 11 6

NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA800AL series

APPLICATION INFORMATION

Typical common anode application

A quadruple transient suppressor in a SOT353 (SC88A) package makes it possible to protect four separate lines using

only one package. A simplified example is shown in Fig 7.

handbook, full pagewidth

GND

keyboard,

terminal,

printer,

etc. I/O

BZA800AL

FUNCTIONAL

DECODER

MLD795

Fig.7 Computer interface protec tion.

Device placement and printed-circuit board layout

Circuit boar d layout is of extreme impor tance in the suppressio n of transients. The cla mping voltage of th e BZA800AL is

determined by the peak transient current and the rate of rise of that current (di/dt). Since parasitic inductances can further

add to the clamping voltage (V = L di/dt) the series conductor lengths on the printed-circuit board should be kept to a

minimum. This includes the lead length of the suppression element.

In addition to minimizing conductor length the following printe d-circuit board layout guidelines are recommended:

1. Place the suppress ion element close to the input termin als or c onnectors

2. Keep parallel signal paths to a minimum

3. Avoid running prote ction conductors in parallel with unprotected conductors

4. Minimize all printed-circuit board loop areas including power and ground loops

5. Minimize the length of the transient return path to ground

6. Avoid using shared trans i ent return paths to a common ground point.

2002 Jan 11 7

NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA800AL series

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT353

detail X

0 1 2 mm

scale

132

Plastic surface mounted package; 5 leads SOT353

UNIT A1

max bpcD

(2)

HELpQywv

mm 0.1 0.30

0.20 2.2

1.8

0.25

0.10 1.35

1.15 0.65

1.3 2.2

2.0 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.25

0.15

1.1

0.8

97-02-28SC-88A

2002 Jan 11 8

NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA800AL series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to informa tion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

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not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

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http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

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case of any incons istency or conflict between information

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were

made to the content, except for the legal definitions and disclaimer s.

Printed in The Netherlands 613514/01/pp9 Date of release: 2002 Jan 11 Document order number: 9397 750 09173