Advanced Power MOSFET IRF740A FEATURES @ Avalanche Rugged Technology @ Rugged Gate Oxide Technology Roston) = 0.552 @ Lower Input Capacitance Ip - 10A # Improved Gate Charge @ Extended Safe Operating Area # Lower Leakage Current: 10uA (Max.) @ Vps = 400V TO-220 @ Lower Rosny: 0.437Q (Typ.) Ta 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units Voss Drain-to-Source Voltage 400 Vv lo Continuous Drain Current (T.=25C) 10 A Continuous Drain Current (T.=100C) 6.3 lom Drain Current-Pulsed (1) 40 A Ves Gate-to-Source Voltage +30 Vv Eas Single Pulsed Avalanche Energy (2) 457 mJ lar Avalanche Current (1) 10 A Ear Repetitive Avalanche Energy (1) 13.4 mJ dv/dt Peak Diode Recovery dv/dt (3) 4.0 V/ns Total Power Dissipation (T.=25C) 134 W Po Linear Derating Factor 1.08 w/c Operating Junction and Ty , Tste - 55 to +150 Storage Temperature Range Maximum Lead Temp. for Soldering C TL Purposes, 1/8. from case for 5-seconds 300 Thermal Resistance Symbol Characteristic Typ. Max. Units Rose Junction-to-Case - 0.93 Recs Case-to-Sink 0.5 -- C/W Resa Junction-to-Ambient - 62.5 re Rev. B FAIRCHILD SEMICONDUCTOR 1999 Fairchild Semiconductor CorporationIRF740A N-CHANNEL POWER MOSFET Electrical Characteristics (T,=25C unless otherwise specified) Symbol Characteristic Min. | Typ. | Max. Units Test Condition BVpss_| Drain-Source Breakdown Voltage | 400| -- -- Vs] Vesg=0V,Ip=250nA ABV/AT, | Breakdown Voltage Temp. Coeff. | -- |0.50] -- |V/C|lp=250uA See Fig 7 Vash) | Gate Threshold Voltage 2.0] - | 4.0] V_ | Vps=5V,lp=250nA Gate-Source Leakage , Forward - | -- | 100 nA Vgg=30V oss Gate-Source Leakage, Reverse -- -- |-100 Vegs=-30V . -- -- 10 Vps=400V loss Drain-to-Source Leakage Current _ . | 400 pA Vps=320V,T .=125C Static Drain-Source R - - [0.55 Vas=10V,Ip=5A (4) Psion) | On-State Resistance o os Os Forward Transconductance - 17.78] -- 6 Vos=50V,|jp=5A (4) Ciss Input Capacitance -- |1180]1530 . Vas=0V,Vps=25V, Ff =1 MHz Coss | Output Capacitance - 1175] 205] pF : ; See Fig 5 Cres Reverse Transfer Capacitance - | 80 | 95 tan) | Turn-On Delay Time - | 18 | 50 , , Vpp=200V,Ip=10A, t, Rise Time -- | 21 | 55 , ns | Re=9.12 tary | Turn-Off Delay Time -- | 78 | 170 ; ; See Fig 13 (4) (5) t Fall Time -- | 28 | 65 Q, Total Gate Charge - | 58 | 75 Vps=320V,Veg=10V, Qgs Gate-Source Charge - | 81] - | nC | Ip=10A Qga Gate-Drain (. Miller. ) Charge - [31.3] - See Fig 6 & Fig 12 (4) (5) Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. | Typ. | Max.| Units Test Condition Ig Continuous Source Current - - 10 A Integral reverse pn-diode lou Pulsed-Source Current (1) | -- -- | 40 in the MOSFET Vep Diode Forward Voltage (4) | -- - [1.5 | Vi] T)=25C,1ls=10A,Ves=0V tre Reverse Recovery Time -- | 315] -- ns | Ty=25C,|-=10A Q Reverse Recovery Charge -- [2.84] -- | pC | di-/dt=100A/us (4) Notes; 1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2) L=8mH, |,.=10A, V,,=50V, Rg=27Q, Starting T,=25C 4) Pulse Test: Pulse Width = 250us, Duty Cycle < 2% ( ( (3) Is9<10A, di/dt < 170A/us, Vpp< BVpgg, Starting T,=25C ( ( 5) Essentially Independent of Operating Temperature ee FAIRCHILD SEMICONDUCTORPOWER MOSFET IRF740A Fig 1. Output Characteristics Fig 2. Transfer Characteristics I, , Drain Gurrent [A] @Nebes : 1%, =0V @ tetes : 2. Vg =0V 1. 20ys Rilse Test, 3. 20s Piles Bet 2.7, =3C cm 6 8 10 Vi, , Drain-Source Voltage [V] Ves, 1 Gabe-Scuroe Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage 1.2 & O.9 bn fe io 2 5 i of! id : : Vg =2V A) OLB. eee cece ecb ccc eee cece cbc ete teaser eee eeeeeeeeeeeeeeeee : : : ~ : : : @Nobes : a we 1. Ys =0V : : @Nte : T, =25C / [oc 2, BOs Piles st 0.0 1 L 1 L 1 1 1 101 L L [ 1 L 1 i 1 1 1 0 10 2 x rs) 02 0A 0.6 08 1.0 12 14 I, Drain Grrent [A] Vip + Source-Drain Veltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 200 Ges Get Ga (Go= shorbad ) b= <n eee eee ete _=C+C coe : : : : : : csc. TO oan eee eet etter dhe ag deg g : i : 5b we 8 2 Nets : 1, =100a 10 2 0 r7 E7 @ ee FAIRCHILD Ed SEMICONDUCTORIRF740A N-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature 1.2 Ree + Drain-Source On-Resistance Fig 8. On-Resistance vs. Temperature 3.0 ZB bbb 0) 15h em LOp 05+ 0.0 15 -B 1B Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature 2 (pectin jn his Aa w ; cpr 7 As Lin YR ps (on) : J ; 10 & EE {10s a f geet Tee ] Ons | ak. @ are se - aN ome, ott ee : 7 mm tN 6. sagt . i ale ; HOG rr ~S 4 ~ : : ~ 4p @ Nites : mo # 15 Loe # . 7, =25C QL 2.7, =10% 3, Single Pulse 192 i 1 i 0 1 1 1 1 0 10 aT Ww a 50 B 10 mB 1p V,, Drain-Source Voltage [V] T,, Case Tenperate [CT] Fig 11. Thermal Response w 10 n a a n W % ad g tes : : a 1071 1. Z,5 (t)=0.93 C/W Max.. | g : 2. Duty Factor, D=t, /t, C . s 3. Toy TP *Z, 5c Ct) 3 WY Pad ~ |. 8 9.04 : single pulse . : ol t, ke - N . . We 2 10-2 i 10 10-4 103 10? 107+ 10 10+ t, , Square Wave Pulse Duration [sec] ee FAIRCHILD SEMICONDUCTORPOWER MOSFET IRF740A Fig 12. Gate Charge Test Circuit & Waveform . Current Regulator. 12V T 7 1OV = Vos Vos ct DUT L 3mA t R, R, oO 0 W- W- Charge urrent Sampling (Ig) | Current Sampling (Ip) Resistor Resistor Fig 13. Resistive Switching Test Circuit & Waveforms out Vin : a 10V seh siete ton loge Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L BVpss L Eas= 7 Ly las SO Vos > LHP - BVpgs -- Vpp Vary t, to obtain os Ip BVpss | - - - - required peak I, ro Ing | - - - - ) Cc = Vop Ip (t) DUT Vop Vos (t) 10V j~<_ +, | Time ee FAIRCHILD SEMICONDUCTORIRF740A N-CHANNEL POWER MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT _~| C+ A Vos L <-> 2 Ts of L OH. Driver Vas $ T R 7K) Same Type tL G Y as DUT = Vop Ves dv/dt controlled by . Rg. I, controlled by Duty Factor . D. O Vv Gate Pulse Width i GS D BS were . . . Gate Pulse Period 10V ( Driver ) | Igy Body Diode Forward Current Ts (DUT ) di/de to | XO Body Diode Reverse Current Vos (DUT ) Body Diode Recovery dv/dt \ Ve . tT Body Diode Forward Voltage Drop ee FAIRCHILD SEMICONDUCTORTRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT qs FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.