KST-2010-000 1
SBC557
PNP Silicon Transistor
Descriptions
• General purpose application
• Switching application
Features
• High voltage : VCEO=-45V
• Complementary pair with SBC547
Ordering Information
Type NO. Marking Package Code
SBC557 SBC557 TO-92
Outline Dimensions unit :
mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
4.5±0.1
4.5±0.1
0.4±0.02
1.27 Typ.
2.54 Typ.
1 2 3
3.45±0.1
2.25±0.1
2.06±0.1
1.20±0.1
0.38
PIN Conne cti ons
1. Collector
2. Bas e
3. Emitter
14.0±0.40
KST-2010-000 2
SBC557
Absolute maximum ratings (Ta=25°
°°
°C)
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO -50 V
Collector-Emitter voltage VCEO -45 V
Emitter-Base voltage VEBO -5 V
Collector current IC-100 mA
Collector dissipation PC625 mW
Junction temperature Tj150 °C
Storage temperature Tstg -55~150 °C
Electrical Characteristics (Ta=25°
°°
°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector - Emitter breakdown voltage BVCEO IC=-2mA, IB=0 -45 - - V
Base -Emitter tu r n on volta ge VBE(ON) VCE=-5V, IC=-2mA - - -700 mV
Base -Emitter sa turation voltage VBE(sat) IC=-100mA, IB=-5mA - -900 - mV
Collec tor -Emitter s a turation voltage VCE(sat) IC=-100mA, IB=-5mA - - -650 mV
Collector cut-off current ICBO VCB=-35V, IE= 0 - - -15 nA
DC current gain hFE*VCE=-5V, IC=-2mA 110 - 800 -
Transition frequency fTVCB=-5V, IC=-10mA - 150 - MHz
Collec tor output capac itance Cob VCB=-10V, IE=0, f=1MHz - - 4.5 pF
Noise Figure NF VCE=-5V, IC=-200µA,
f=1KHz,Rg=2KΩ--10dB
* : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
KST-2010-000 3
SBC557
Electrical Characteristic Curves
Fig. 3 IC-VCE Fig. 4 hFE-IC
Fig. 5 VCE(sat)-IC
Fig. 2 IC-VBE
Fig. 1 PC-Ta
