2N174 Transistors Ge PNP Power BJT Military/High-RelN V(BR)CEO (V)70a V(BR)CBO (V)80 I(C) Max. (A)15 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (oC)95o I(CBO) Max. (A)8.0m @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)0.9 @I(C) (A) (Test Condition)12 @I(B) (A) (Test Condition)2.0 h(FE) Min. Current gain.25 h(FE) Max. Current gain.50 @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq10k @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)6.0 t(r) Max. (s) Rise time15uA t(f) Max. (s) Fall time.15uA Package StyleTO-36