2MBI100TA-060 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit MS5F 5289 3 14 H04-004-03 3. Absolute Maximum Ratings ( at Tc= 25 unless otherwise specified Items Symbols Collector-Emitter voltage VCES Gate-Emitter voltage VGES Maximum Ratings 600 Conditions Ic=1mA Units V 20 V Ic Duty=100 % 100 Ic pulse IF 1ms 200 100 IF pulse Duty=50 % 1ms 200 Collector Power Dissipation Pc 1 device 310 W Junction temperature Tj 150 Storage temperature Tstg -40~ +125 Collector current (*1) Viso 2500 V Mounting(*2) 3.5 Nm Terminals (*2) 3.5 Isolation voltage Screw Torque AC : 1min. A (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5) Terminal 2.5~3.5Nm (M5) 4. Electrical characteristics ( at Tj= 25unless otherwise specified) Characteristics Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Symbols Conditions Max. Units V GE = 0 V, V CE = 600 V - - 1.0 mA IGES V CE = 0 V, V GE = 20 V - - 200 nA V GE(th) V CE = 20 V, Ic = 100 mA 6.2 6.7 7.7 V - 1.8 2.0 8500 2.4 - V pF VCE(sat) V GE = Ic = Cies VGE = Coes V CE = Reverse transfer capacitance Cres f= ton 15 V 100 A 0V Chip Terminal 10 V 1 MHz Reverse recovery time 1500 - 1300 - Vcc = 300 V - 0.4 1.2 100 A - 0.25 0.6 tr(i) V GE = 15 V - 0.1 - toff RG = 33 - 0.4 1.2 - 0.04 0.45 tf Forward on voltage - Ic = tr Turn-off time typ. ICES Output capacitance Turn-on time min. VF trr IF = IF = s Chip - 1.7 - Terminal - 2.0 2.5 - - 0.3 s 55 - - mJ Max. Units 100 A 100 A V Allowabe avalanche energy during short circuit cutting off P AV Ic > 200A ,Tj = 125 (Non-repetitive) 5. Thermal resistance characteristics Characteristics Items Symbols Thermal resistance (1 device) Rth(j-c) Contact Thermal resistance Rth(c-f) Conditions min. typ. - - - 0.05 IGBT FWD With thermal compound 0.400 1.02 / - * This is the value which is defined mounting on the additional cooling fin with thermal compound. MS5F 5289 4 14 H04-004-03 6. Indication on module 2MBI100TA-060 100A 600V Place of manufucturing Lot No. 7. Applicable category This specification is applied to IGBT Module named 2MBI100TA-060 8. Storage and transportation notes The module should be stored at a standard temperature of 5 to 35 and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when tranporting. 9. Definitions of switching time 90% 0V 0V V GE L trr Irr Ic 90% 10% 10% 0V 0A V CE Ic 90% Vcc RG VCE 10% VCE tr(i) V GE Ic tr tf toff ton MS5F 5289 5 14 H04-004-03 10. Definition of the allowable avalance energy during short circuit cutfing of. -VCEP PAV= IC 1 2 xVCEPxICPxtf(SC) -ICP VCE tf(SC) 11. UL recognition This products is recognized by Underwriters Laboratories Inc., the file No. is E82988. 12. Packing and Labeling Packing box Display Display on the packing box - Logo of production - Type name - Lot No. - Products quantity in a packing box * Each modules are packed with electrical protection. MS5F 5289 6 14 H04-004-03 13. Reliability test results Reliability Test Items Test categories Test items Mechanical Tests 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock Environment Tests 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker 5 Temperature Cycle Reference AcceptNumber norms ance of sample EIAJ number ED-4701 Test methods and conditions Pull force Test time Screw torque : a 40N : 101 sec. : 2.5 ~ 3.5 Nm (M5) A - 111 Method 1 A - 112 Test time : 101 sec. Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : a 10G Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 1000G Pulse width : 0.5msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 853 Relative humidity : 855% Test duration : 1000hr. Test temp. : 121 Atmospheric pressure : 2.03x105 Pa (Reference value) Test duration : 20hr. +3 Test temp. : (1:0) 5 (1:0) Method 2 A - 121 5 (1:0) A - 122 5 (1:0) B - 111 5 (1:0) B - 112 5 (1:0) B - 121 5 (1:0) B - 123 5 (1:0) B - 131 5 (1:0) B - 141 5 (1:0) Low temp. -40 -5 High temp. 125 +5 -5 Number of cycles RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles Test temp. : Dwell time 5 6 Thermal Shock High temp. 100 +0 -5 +5 Low temp. 0 -0 Used liquid : Water with ice and a boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles MS5F 5289 7 14 H04-004-03 Reliability Test Items Test categories Test items Test methods and conditions 1 High temperature Reverse Bias +0 Test duration 2 High temperature Bias +0 Test duration : Ta = 125 -5 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. Test temp. Relative humidity Bias Voltage Bias Method : : : : Test duration ON time OFF time Test temp. : : : : Test temp. Bias Voltage Bias Method 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycle) ( for IGBT ) D - 313 5 (1:0) D - 323 5 (1:0) B - 121 5 (1:0) D - 322 5 (1:0) : Ta = 125 -5 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr. Test temp. Bias Voltage Bias Method Endurance Tests Reference Acceptnorms Number ance EIAJ of sample number ED-4701 Number of cycles : 85 +-3o C 85 +-5% VC = 0.8xVCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=1005 deg Tj 150 , Ta=255 15000 cycles Failure Criteria Item Electrical characteristic Characteristic Leakage current Unit - USLx2 USLx2 mA Gate threshold voltage VGE(th) LSLx0.8 USLx1.2 mA Saturation voltage VCE(sat) - USLx1.2 V VF - USLx1.2 USLx1.2 V mV - USLx1.2 mV resistance FWD Isolation voltage inspection Failure criteria Lower limit Upper limit ICES IGES Forward voltage Thermal IGBT Visual Symbol VGE or VCE VF Note A Viso Broken insulation - - The visual sample - Visual inspection Peeling Plating and the others LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. MS5F 5289 8 14 H04-004-03 Reliability Test Results Test categories Test items Endurance Tests Environment Tests Mechanical Tests 1 Terminal Strength (Pull test) 2 Mounting Strength Reference Number norms of test EIAJ ED-4701 sample A - 111 Number of failure sample 5 0 5 0 Method 1 A - 112 Method 2 3 Vibration A - 121 5 0 4 Shock A - 122 5 0 1 High Temperature Storage B - 111 5 0 2 Low Temperature Storage B - 112 5 0 3 Temperature Humidity B - 121 5 0 B - 123 5 0 5 Temperature Cycle B - 131 5 0 6 Thermal Shock B - 141 5 0 1 High temperature Reverse Bias D - 313 5 0 2 High temperature Bias D - 323 5 0 3 Temperature Humidity Bias B - 121 5 0 4 Intermitted Operating Life D - 322 5 0 Storage 4 Unsaturated Pressure Cooker ( for gate ) (Power cycling) ( for IGBT ) MS5F 5289 9 14 H04-004-03 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) 15V 12V VGE= 20V 200 300 Collector current : Ic [ A ] Collector current : Ic [ A ] 300 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) 10V 100 VGE= 20V 15V 200 12V 10V 100 8V 8V 0 0 0 300 1 2 3 4 5 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) 12 Collector - Emitter voltage : VCE [ V ] 10 Collector current : Ic [ A ] Tj= 25C Tj= 125C 200 100 0 8 6 4 Ic=200A 2 Ic=100A Ic=50A 0 0 1 2 3 4 5 10 Collector - Emitter voltage : VCE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 20000 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=100A, Tj= 25C 500 25 5000 1000 Coes Cres 200 400 20 300 15 200 10 100 5 0 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] 30 35 0 100 200 300 400 500 Gate - Emitter voltage : VGE [ V ] Cies Collector - Emitter voltage : VCE [ V ] Capacitance : Cies, Coes, Cres [ pF ] 10000 0 600 Gate charge : Qg [ nC ] MS5F 5289 10 14 H04-004-03 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=33ohm, Tj= 25C 1000 ton ton toff tr toff tr Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg= 33ohm, Tj= 125C 100 tf 10 100 tf 10 0 50 100 150 200 0 [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=100A, VGE=+-15V, Tj= 25C ton toff 1000 100 150 200 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=33ohm 10 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 5000 50 Collector current : Ic [ A ] Collector current : Ic [ A ] tr 100 tf Eon(125C) Eon(25C) 5 Eoff(125C) Eoff(25C) Err(125C) Err(25C) 10 0 5 10 100 0 Gate resistance : Rg [ ohm ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=100A, VGE=+-15V, Tj= 125C 200 [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=33ohm, Tj<=125C 300 Eon Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 30 100 Collector current : Ic [ A ] 20 10 Eoff 200 100 Err 0 10 100 Gate resistance : Rg [ ohm ] 500 0 0 200 400 600 800 Collector - Emitter voltage : VCE [ V ] MS5F 5289 11 14 H04-004-03 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=+-15V, Rg=33ohm [ Inverter ] Forward current vs. Forward on voltage (typ.) 200 300 Tj=25C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] Tj=125C 100 0 trr(125C) 100 trr(25C) Irr(125C) Irr(25C) 10 0 1 2 3 Forward on voltage : VF [ V ] 0 100 200 Forward current : IF [ A ] Transient thermal resistance 2 FWD Thermal resistanse : Rth(j-c) [ C/W ] 1 IGBT 0.1 0.01 0.001 0.01 0.1 1 Pulse width : Pw [ sec ] MS5F 5289 12 14 H04-004-03 Warnings - This product shall be used within its abusolute maximun rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. - Conect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. - Use this product within the power cycle curve(Thechnical Rep.No:MT6M4057) No.:MT6M4057 - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact probrem. - According to the outline drawing, select proper length of screw for main terminal. Longer screws may break the case. - Use this product with keeping the cooling fin's flatness between screw holes within 100um and the rouphness within 10um. Also keep the tightening torque within the limits of this specification. Improper handling may cause isolation breakdown and this may lead to a cirtical accident. 100um10um - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOA RBSOA - If excessive static electricity is applied to the control terminals, the devices can be broken. Implement some countermeasures against static electricity. MS5F 5289 13 14 H04-004-03 Cautions - Fuji Electric is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injuly or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. - The application examples described in this specification only explain typical ones that used the Fuji Electric products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine ralaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd. MS5F 5289 14 14 H04-004-03