© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 150°C 1200 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C ( Chip Capability ) 260 A
IC110 TC= 110°C 82 A
ILRMS TC= 25°C (Lead RMS Limit) 120 A
ICM TC= 25°C, 1ms 580 A
SSOA VGE = 15V, TVJ = 125°C, RG = 2Ω ICM = 164 A
(RBSOA) Clamped Inductive Load @ 0.8 • VCES
PCTC= 25°C 1250 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062 in.) from Case for 10 260 °C
MdMounting Torque ( IXGK ) 1.13/10 Nm/lb.in.
FCMounting Force ( IXGX ) 20..120/4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC= 250μA, VCE = 0V 1200 V
VGE(th) IC= 1mA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 50 μA
Note 1, TJ = 125°C 2.5 mA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC= IC110, VGE = 15V, Note 2 1.83 2.05 V
TJ = 125°C 1.95
DS100164A(10/09)
GenX3TM 1200V
IGBTs
IXGK82N120A3
IXGX82N120A3
VCES = 1200V
IC110 = 82A
VCE(sat) ≤ ≤
≤ ≤
≤ 2.05V
Ultra-Low-Vsat PT IGBTs for
up to 3kHz Switching
Features
zOptimized for Low Conduction Losses
zInternational Standard Packages
Advantages
zHigh Power Density
zLow Gate Drive Requirement
Applications
zPower Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zWelding Machines
zLamp Ballasts
zInrush Current Protection Circuits
Preliminary Technical Information
G = Gate E = Emitter
C = Collector Tab = Collector
PLUS247TM (IXGX)
GCE Tab
TO-264 (IXGK)
E
G
CE Tab
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGK82N120A3
IXGX82N120A3
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, Note 2 40 66 S
Cies 7700 pF
Coes VCE = 25V, VGE = 0V, f = 1 MHz 520 pF
Cres 190 pF
Qg(on) 340 nC
Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES 54 nC
Qgc 146 nC
td(on) 34 ns
tri 75 ns
Eon 5.5 mJ
td(off) 265 ns
tfi 780 1300 ns
Eoff 12.5 20.0 mJ
td(on) 32 ns
tri 77 ns
Eon 6.7 mJ
td(off) 340 ns
tfi 1250 ns
Eoff 22.5 mJ
RthJC 0.10 °C/W
RthCK 0.15 °C/W
Inductive load, TJ = 25°C
IC = 80A, VGE = 15V
VCE = 0.5 • VCES, RG = 2Ω
Note 3
Inductive load, TJ = 125°C
IC = 80A, VGE = 15V
VCE = 0.5 • VCES, RG = 2Ω
Note 3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes:
1. Part must be heatsunk for high-temp ICES measurement.
2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
TO-264 AA ( IXGK) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
PLUS247TM (IXGX) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2009 IXYS CORPORATION, All Rights Reserved
IXGK82N120A3
IXGX82N120A3
Fi g . 1. Ou tpu t C h ar ac ter i st i cs @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
180
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fi g . 2. Extend ed Ou tpu t C h aracter i st i cs @ T
J
= 25ºC
0
40
80
120
160
200
240
280
320
02468101214
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
13V
7V
9V
11V
Fi g . 3. Ou tp ut C h ar act er i stics @ T
J
= 125ºC
0
20
40
60
80
100
120
140
160
180
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 4. Dependence o f V
CE(sat)
on
Junction T emperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 164A
I
C
= 82A
I
C
= 41A
Fi g . 5. C o l l ec to r -to -Emitter Vol tag e
vs. Gate- to -Emitter Vo l ta g e
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
6 7 8 9 101112131415
V
GE
- Volts
V
CE
- Volts
I
C
= 164
A
T
J
= 25ºC
41
A
82
A
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
180
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGK82N120A3
IXGX82N120A3
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
Fig . 11. Maximum Tr ansien t Th ermal Imp e d ance
0.200
Fig. 7. Transconductance
0
20
40
60
80
100
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fi g . 10. R ever se-B i as Safe Op er ati n g Area
0
20
40
60
80
100
120
140
160
180
200 300 400 500 600 700 800 900 1000 1100 1200
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 2Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300 350
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 82A
I
G
= 10mA
Fig. 9. Capacitance
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
© 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: G_82N120A3(8T)6-23-09
IXGK82N120A3
IXGX82N120A3
Fig. 16. Inductive T urn-on
Swit ch i n g Ti mes vs. C o l l e cto r C u r r en t
0
20
40
60
80
100
120
20 30 40 50 60 70 80
I
C
- Amperes
t
r i
- Nanoseconds
24
26
28
30
32
34
36
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 2Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 25ºC, 125ºC
Fig. 17. Inductive Turn-on
Switching Times vs. Jun cti o n Temp er atu re
20
30
40
50
60
70
80
90
100
110
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r i - Nanoseconds
24
26
28
30
32
34
36
38
40
42
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 2Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
Fi g . 12 . In d u cti v e Swi tch i n g
Ener gy L o ss vs. C o l l ecto r C ur r en t
0
5
10
15
20
25
30
20 30 40 50 60 70 80
I
C
- Amperes
Eoff - MilliJoules
0
2
4
6
8
10
12
Eon
- MilliJoules
E
off
E
on
- - - -
R
G
= 2
Ω ,
V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig . 13. I n d u cti ve Switching
Energy Loss vs. Junction Temperature
0
5
10
15
20
25
30
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
2
4
6
8
10
12
E
on
- MilliJoules
Eoff Eon
- - - -
R
G
= 2Ω
,
V
GE
= 15V
V
CE
= 600V
I
C
= 80A
I
C
= 40A
Fig. 14. Inductive T urn-off
Swit ch i n g Times vs. C o l l ecto r Cur r en t
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
20 30 40 50 60 70 80
I
C
- Amperes
t
f i - Microseconds
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
t
d
(
off
)
- Microseconds
t
f i
t
d(off)
- - - -
R
G
= 2Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Inductive Turn-off
Switchi n g Times vs. Ju n ction Temp er atur e
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i - Microseconds
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
t
d
(
off
)
- Microseconds
t
f i
t
d(off)
- - - -
R
G
= 2Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 40A, 80A
