4N33M - Fairchild Semiconductor

tm

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

May 2007

4NXXM, H11B1M, TIL113M Rev. 1.0.0

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M

General Purpose 6-Pin Photodarlington Optocoupler

Features

■

High sensitivity to low input drive current

■

Meets or exceeds all JEDEC Registered

Speciﬁcations

■

UL, C-UL approved

■

VDE 0884 approval available as a test option

– add option V (e.g., 4N29VM)

Applications

■

Low power logic circuits

■

Telecommunications equipment

■

Portable electronics

■

Solid state relays

■

Interfacing coupling systems of different potentials

and impedances

Description

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and

TIL113M have a gallium arsenide infrared emitter

optically coupled to a silicon planar photodarlington.

Packages Schematic

EMITTER

COLLECTOR

1

2

3

ANODE

CATHODE

4

5

6BASE

N/C

6

1

6

1

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

4NXXM, H11B1M, TIL113M Rev. 1.0.0 2

Absolute Maximum Ratings

(T

A

= 25°C Unless otherwise speciﬁed.)

Symbol Parameter Value Units

TOTAL DEVICE

T

STG

Storage Temperature -40 to +150 °C

T

OPR

Operating Temperature -40 to +100 °C

T

SOL

Lead Solder Temperature (Wave) 260 for 10 sec °C

P

D

Total Device Power Dissipation @ T

A

= 25°C 250 mW

Derate above 25°C 3.3 mW/°C

EMITTER

I

F

Continuous Forward Current 80 mA

V

R

Reverse Voltage 3 V

I

F

(pk) Forward Current – Peak (300µs, 2% Duty Cycle) 3.0 A

P

D

LED Power Dissipation @ T

A

= 25°C 150 mW

Derate above 25°C 2.0 mW/°C

DETECTOR

BV

CEO

Collector-Emitter Breakdown Voltage 30 V

BV

CBO

Collector-Base Breakdown Voltage 30 V

BV

ECO

Emitter-Collector Breakdown Voltage 5 V

P

D

Detector Power Dissipation @ T

A

= 25°C 150 mW

Derate above 25°C 2.0 mW/°C

I

C

Continuous Collector Current 150 mA

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

4NXXM, H11B1M, TIL113M Rev. 1.0.0 3

Electrical Characteristics

(T

A

= 25°C Unless otherwise speciﬁed.)

Individual Component Characteristics

Transfer Characteristics

Symbol Parameter Test Conditions Device Min. Typ. Max. Unit

EMITTER

V

F

Input Forward Voltage* I

F

= 10mA 4NXXM 1.2 1.5 V

H11B1M,

TIL113M

0.8 1.2 1.5

I

R

Reverse Leakage Current* V

R

= 3.0V 4NXXM 0.001 100 µA

V

R

= 6.0V H11B1M,

TIL113M

0.001 10

C Capacitance* V

F

= 0V, f = 1.0MHz All 150 pF

DETECTOR

BV

CEO

Collector-Emitter Breakdown Voltage* I

C

= 1.0mA, I

B

= 0 4NXXM,

TIL113M

30 60 V

H11B1M 25 60

BV

CBO

Collector-Base Breakdown Voltage* I

C

= 100µA, I

E

= 0 All 30 100 V

BV

ECO

Emitter-Collector Breakdown Voltage* I

E

= 100µA, I

B

= 0 4NXXM 5.0 10 V

H11B1M,

TIL113M

710

I

CEO

Collector-Emitter Dark Current* V

CE

= 10V, Base Open All 1 100 nA

Symbol Parameter Test Conditions Device Min. Typ. Max. Unit

DC CHARACTERISTICS

I

C(CTR)

Collector Output Current*

(1, 2)

I

F

= 10mA, V

CE

= 10V,

I

B

= 0

4N32M,

4N33M

50 (500) mA (%)

4N29M,

4N30M

10 (100)

I

F

= 1mA, V

CE

= 5V H11B1M 5 (500)

I

F

= 10mA, V

CE

= 1V TIL113M 30 (300)

V

CE(SAT)

Saturation Voltage*

(2)

I

F

= 8mA, I

C

= 2.0mA 4NXXM 1.0 V

TIL113M 1.25

I

F

= 1mA, I

C

= 1mA H11B1M 1.0

AC CHARACTERISTICS

t

on

Tu r n-on Time I

F

= 200mA, I

C

= 50mA,

V

CC

= 10V, R

L

= 100

Ω

4NXXM,

TIL113M

5.0 µS

I

F

= 10mA, V

CE

= 10V,

R

L

= 100

Ω

H11B1M 25

t

off

Tu r n-off Time

I

F

= 200mA, I

C

= 50mA,

V

CC

= 10V, R

L

= 100

Ω

4N32M,

4N33M,

TIL113M

100 µS

4N29M,

4N30M

40

I

F

= 10mA, V

CE

= 10V,

R

L

= 100

Ω

H11B1M 18

BW Bandwidth

(3, 4)

30 kHz

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

4NXXM, H11B1M, TIL113M Rev. 1.0.0 4

Electrical Characteristics

(T

A

= 25°C Unless otherwise speciﬁed.) (Continued)

Isolation Characteristics

Notes:

* Indicates JEDEC registered data.

1. The current transfer ratio(I

C

/I

F

) is the ratio of the detector collector current to the LED input current.

2. Pulse test: pulse width = 300µs, duty cycle

≤

2.0% .

3. I

F

adjusted to I

C

= 2.0mA and I

C

= 0.7mA rms.

4. The frequency at which I

C

is 3dB down from the 1kHz value.

5. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.

Symbol Characteristic Test Conditions Device Min. Typ. Max. Units

V

ISO

Input-Output Isolation Voltage

(5)

I

I-O

≤

1µA, Vrms, t = 1sec. All 7500 Vac(peak)

VDC 4N32M* 2500 V

VDC 4N33M* 1500

R

ISO

Isolation Resistance

(5)

V

I-O

= 500VDC All 10

11

Ω

C

ISO

Isolation Capacitance

(5)

V

I-O

= Ø, f = 1MHz All 0.8 pF

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

4NXXM, H11B1M, TIL113M Rev. 1.0.0 5

Typical Performance Curves

Fig. 2 Normalized CTR vs. Forward Current

IF - FORWARD CURRENT (mA)

02468101214161820

NORMALIZED CTR

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VCE = 5.0V

TA = 25°CNormalized to

IF = 10 mA

Fig. 3 Normalized CTR vs. Ambient Temperature

TA - AMBIENT TEMPERATURE (°C)

-60 -40 -20 0 20 40 60 80 100

NORMALIZED CTR

0.2

0.4

0.6

0.8

1.0

1.2

1.4

IF = 5 mA

IF = 10 mA

IF = 20 mA

Normalized to

IF = 10 mA

TA = 25°C

IF - LED FORWARD CURRENT (mA)

VF - FORWARD VOLTAGE (V)

Fig. 1 LED Forward Voltage vs. Forward Current

110100

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

TA = 25°C

TA = -55°C

TA = 100°C

Fig. 5 CTR vs. RBE (Saturated)

RBE- BASE RESISTANCE (k Ω)

NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))

10 100 1000

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

IF = 20 mA

IF = 10 mA

IF = 5 mA

VCE= 0.3 V

Fig. 4 CTR vs. RBE (Unsaturated)

RBE- BASE RESISTANCE (kΩ)

NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))

10 100 1000

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

VCE= 5.0 V

IF = 20 mA

IF = 10 mA

IF = 5 mA

0.01 0.1 1 10

0.001

0.01

0.1

1

10

100

I

F

= 5 mA

I

F

= 20 mA

I

F

= 10 mA

Fig. 6 Collector-Emitter Saturation Voltage

vs. Collector Current

IC - COLLECTOR CURRENT (mA)

VCE (SAT) - COLLECTOR-EMITTER

SATURATION VOLTAGE (V)

I

F

= 2.5 mA

T

A

= 25

˚C

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

4NXXM, H11B1M, TIL113M Rev. 1.0.0 6

Typical Performance Curves

(Continued)

NORMALIZED ton - (ton(R

BE

) / ton(open))

Fig. 8 Normalized t

on

vs. R

BE

RBE- BASE RESISTANCE (k Ω)

10 100 1000 10000 100000

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

VCC = 10 V

IC = 2 mA

RL = 100 Ω

SWITCHING SPEED - (µs)

Fig. 7 Switching Speed vs. Load Resistor

R-LOAD RESISTOR (kΩ)

0.1 1 10 100

0.1

1

10

100

1000

Toff

IF = 10 mA

VCC = 10 V

TA = 25°C

Tr

Ton

Tf

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

VCC = 10 V

IC = 2 mA

RL = 100 Ω

NORMALIZED toff - (toff(R

BE

) / toff(open))

10 100 1000 10000 100000

RBE- BASE RESISTANCE (k Ω)

Fig. 9 Normalized t

off

vs. R

BE

Fig. 10 Dark Current vs. Ambient Temperature

TA - AMBIENT TEMPERATURE

(°C)

020406080100

ICEO - COLLECTOR -EMITTER DARK CURRENT (nA)

0.001

0.01

0.1

1

10

100

1000

10000

V

CE

= 10 V

T

A

= 25°

C

OUTPUT PULSE

INPUT PULSE

TEST CIRCUIT WAVE FORMS

trtf

INPUT

IF RL

RBE

VCC = 10V

OUTPUT

ton

10%

90%

toff

Figure 11. Switching Time Test Circuit and Waveforms

IC

Adjust IF to produce IC = 2 mA

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

4NXXM, H11B1M, TIL113M Rev. 1.0.0 7

Package Dimensions

Note:

All dimensions are in inches (millimeters).

Through Hole

0.4" Lead Spacing

Surface Mount

Recommended Pay Layout for

Surface Mount Leadform

0.350 (8.89)

0.320 (8.13)

0.260 (6.60)

0.240 (6.10)

0.320 (8.13)

0.070 (1.77)

0.040 (1.02) 0.014 (0.36)

0.010 (0.25)

0.200 (5.08)

0.115 (2.93)

0.100 (2.54)

0.015 (0.38)

0.020 (0.50)

0.016 (0.41) 0.100 (2.54) 15°

0.012 (0.30)

Pin 1 ID

SEATING PLANE

0.350 (8.89)

0.320 (8.13)

0.260 (6.60)

0.240 (6.10)

0.390 (9.90)

0.332 (8.43)

0.070 (1.77)

0.040 (1.02)

0.014 (0.36)

0.010 (0.25)

0.320 (8.13)

0.035 (0.88)

0.006 (0.16)

0.012 (0.30)

0.008 (0.20)

0.200 (5.08)

0.115 (2.93)

0.025 (0.63)

0.020 (0.51)

0.020 (0.50)

0.016 (0.41)

0.100 [2.54]

PIN 1 ID

SEATING PLANE

0.350 (8.89)

PIN 1 ID

0.320 (8.13)

0.260 (6.60)

0.240 (6.10)

0.070 (1.77)

SEATING PLANE

0.040 (1.02) 0.014 (0.36)

0.010 (0.25)

0.200 (5.08)

0.115 (2.93)

0.020 (0.50)

0.016 (0.41)

0.100 [2.54]

0.100 (2.54)

0.015 (0.38)

0.012 (0.30)

0.008 (0.21)

0.425 (10.80)

0.400 (10.16)

0.070

(

1.78

)

0.060

(

1.52

)

0.030

(

0.76

)

0.100

(

2.54

)

0.295

(

7.49

)

0.415

(

10.54

)

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

4NXXM, H11B1M, TIL113M Rev. 1.0.0 8

Ordering Information

Marking Information

Sufﬁx Example Option

No Sufﬁx 4N32M Standard Through Hole Device

S 4N32SM Surface Mount Lead Bend

SR2 4N32SR2M Surface Mount; Tape and reel

T 4N32TM 0.4" Lead Spacing

V 4N32VM VDE 0884

TV 4N32TVM VDE 0884, 0.4" Lead Spacing

SV 4N32SVM VDE 0884, Surface Mount

SR2V 4N32SR2VM VDE 0884, Surface Mount, Tape & Reel

4N29

V X YY Q

1

2

6

43 5

Deﬁnitions

1Fairchild logo

2Device number

3VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table)

4 One digit year code, e.g., ‘7’

5Two digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

4NXXM, H11B1M, TIL113M Rev. 1.0.0 9

Tape Dimensions

Note:

All dimensions are in millimeters.

Reﬂow Soldering Proﬁle

4.0 ± 0.1

Ø1.5 MIN

User Direction of Feed

2.0 ± 0.05

1.75 ± 0.10

11.5 ± 1.0

24.0 ± 0.3

12.0 ± 0.1

0.30 ± 0.05

21.0 ± 0.1

4.5 ± 0.20

0.1 MAX 10.1 ± 0.20

9.1 ± 0.20

Ø1.5 ± 0.1/-0

300

280

260

240

220

200

180

160

140

120

100

80

60

40

20

0

°C

Time (s)

0 60 180120 270

260°C

>245°C = 42 Sec

Time above

183°C = 90 Sec

360

1.822°C/Sec Ramp up rate

33 Sec

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler

4NXXM, H11B1M, TIL113M Rev. 1.0.0 10

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE

APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS

PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S

WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body or

(b) support or sustain life, and (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in a significant injury of the user.

2. A critical component in any component of a life support,

device, or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Preliminary This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve design.

No Identification Needed

First Production

Full Production This datasheet contains final specifications. Fairchild Semiconductor

reserves the right to make changes at any time without notice to improve

design.

Obsolete Not In Production This datasheet contains specifications on a product that has been

discontinued by Fairchild Semiconductor. The datasheet is printed for

reference information only.

Rev. I27