BAV23S
BAV23S, Rev. C
2000 Fairchild Semiconductor Corporation
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
BAV23S
Small Signal Diode
Symbol
Parameter
Value
Units
VRRM Maximum Repetitive Reverse Voltage 250 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 microsecond
Pulse Width = 100 microsecond
9.0
3.0
A
A
Tstg Storage Temperature Range -55 to +150 °C
TJ Operating Junction Temperature 150 °C
Thermal Characteristics
Symbol
Parameter
Value
Units
PD Power Dissipation 350 mW
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
12
3
Connection Diagram
12
3
L30
3
1
2
SOT-23
Symbol
Parameter Test Conditions Min
Max
Units
VR Breakdown Voltage IR = 100 µA 250 V
VF Forward Voltage IF = 100 mA
IF = 200 mA 1.0
1.25 V
V
IR Reverse Current VR = 250 V
VR = 250 V, TA = 150°C 100
100 nA
µA
trr Reverse Recovery Time IF = IR = 30 mA, IRR = 3.0 mA,
RL = 100 Ω 50 ns
BAV23S
BAV23S, Rev. C
Small Signal Diode
(continued)
1 2 3 5 10 20 30 50 100
110
120
130
140
150
Reverse C urrent, I
R
[uA]
R
Ta= 2 5°CTa= 25 °C
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten ( 10) Degree C increase in Temperature
10 20 30 50 70 100
0
50
100
150
200
250
300
Reverse Voltage, V
R
[v]
Reverse Current, I
R
[nA]
225 1 2 3 5 10 20 30 50 100
250
300
350
400
450
Forward Current, I
F
[uA]
Forward Voltage, V
F
[mV]
F
F
485 Ta= 25 °C
0.1 0.2 0.3 0.5 1 2 3 5 10
450
500
550
600
650
700
Forward Current, I
F
[mA]
Forward Voltage, V
F
[mV]
F
725 Ta= 25°C
Reverse Voltage, V
R
[v]
10 20 30 50 100 200 300 500
0.6
0.8
1
1.2
1.4
Forward Current, I
F
[mA]
Forward Voltage, V
F
[V]
F
1.5 Ta= 25°C
02468101214
1
1.1
1.2
1.3
Reverse Voltage [V]
Total Capacitance, CT [pF]
Ta= 25
°
C
15
Typical Characteristics
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100 uA Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
Figure 3. Forward Voltage vs Forward Current
VF - 1.0 to 100 uA Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
Figure 5. Forward Voltage vs Forward Current
VF - 10 - 800 mA Figure 6. Total Capacitance
BAV23S
BAS16, Rev. C
050100150
0
100
200
300
400
500
I - FORWARD CURRENT STEADY STATE - mA
o
D
R
A
Io - AVERAGE RECTIFIED CURRENT - mA
IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms
10 20 30 40 50 60
1
1.5
2
2.5
3
3.5
4
Reverse Current [mA]
Reverse Recovery Time, t
rr
[ns]
Ta= 25°C
0 50 100 150 200
0
100
200
300
400
500
Average Temperature, I
O
( C)
Power Dissipation, P
D
[mW]
o
DO - 35 Pk g
SOT- 23 Pkg
Small Signal Diode
(continued)
T ypical Characteristics (continued)
050100150
0
100
200
300
400
I
F(AV)
- AVERAGE RECTIFIED CURRENT - mA
Current [mA]
Ambient Temperature, T
A
[ C]
Figure 7. Reverse Recovery Time Figure 8. Average Rectified Current (I
F(AV)
)
vs Reverse Current versus Ambient Temperature (T
A
)
TRR - IR 10 mA vs 60 mA
Figrue 9. Power Derating Curve
o
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This datasheet contains the design specifications for
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any manner without notice.
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supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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