SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES *High DC Current Gain : hFE=1000(Min.) at VCE=3V, IC=3A. *High Collector Breakdown Voltage : VCEO=100V(Min.) MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEB0 5 V DC IC 5 Pules ICP 8 IB 0.12 A PC 65 W Tj 150 Tstg -55150 Collector Current A Base Current Collector Power Dissipation (Tc=25) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=100V, IE=0 - - 0.2 mA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 2 mA V(BR)CEO IC=10mA, IB=0 100 - - V hFE(1) VCE=3V, IC=0.5A 1000 - 10000 hFE(2) VCE=3V, IC=3A 1000 - - VCE(sat)(1) IC=3A, IB=12mA - - 2 VCE(sat)(2) IC=5A, IB=20mA - - 4 Base-Emitter Voltage VBE VCE=3V, IC=3A - - 2.5 V Output Capacitance Cob VCB=10V, IE=0, f=1MHz - - 300 pF Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage 1999. 11. 16 V Revision No : 1 1/2 TIP122 1999. 11. 16 Revision No : 1 2/2