1999. 11. 16 1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP122
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
SWITCHING APPLICATIONS.
HAMMER DRIVER, PULSE MOTOR DRIVER
APPLICATIONS.
FEATURES
·High DC Current Gain : hFE=1000(Min.) at VCE=3V, IC=3A.
·High Collector Breakdown Voltage : VCEO=100V(Min.)
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEB0 5 V
Collector Current
DC IC5
A
Pules ICP 8
Base Current IB0.12 A
Collector Power Dissipation
(Tc=25℃)PC65 W
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=100V, IE=0 - - 0.2 mA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 2 mA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 100 - - V
DC Current Gain
hFE(1) VCE=3V, IC=0.5A 1000 - 10000
hFE(2) VCE=3V, IC=3A 1000 - -
Collector-Emitter Saturation Voltage
VCE(sat)(1) IC=3A, IB=12mA - - 2
V
VCE(sat)(2) IC=5A, IB=20mA - - 4
Base-Emitter Voltage VBE VCE=3V, IC=3A - - 2.5 V
Output Capacitance Cob VCB=10V, IE=0, f=1MHz - - 300 pF
EQUIVALENT CIRCUIT
1999. 11. 16 2/2
TIP122
Revision No : 1
